Residual Stress and Interface Effect on Dielectric Mechanisms in Poled Ultrathin Relaxor Ferroelectric Single Crystals

Long Li,Xiangyong Zhao,Xiaobing Li,Qing Xu,Linrong Yang,Sheng Wang,Haosu Luo
DOI: https://doi.org/10.1063/1.4879250
IF: 2.877
2014-01-01
Journal of Applied Physics
Abstract:We have investigated the dielectric performances and mechanism of super-thin Mn-doped Pb(Mg1/3Nb2/3)O3-PbTiO3 crystals, exhibiting significantly different dielectric behaviors compared with thick wafer. Dramatic decrease by 5 times and large frequency dispersion of permittivity, changed diffuse degree of phase transition, dielectric loss anomaly with frequency and dielectric performances with direct-current electric field for thin wafers are observed, proving the existence of large surface residual stress and interface effects. Additionally, a theoretical model of low-permittivity and low-ferroelectric surface damage layers is concurrently proposed. These observations have important implications for actual performances of thin wafers applied in practical devices.
What problem does this paper attempt to address?