Electronic States in Hybrid Boron Nitride and Graphene Structures

M. Zhao,Y. H. Huang,F. Ma,T. W. Hu,K. W. Xu,Paul K. Chu
DOI: https://doi.org/10.1063/1.4817883
IF: 2.877
2013-01-01
Journal of Applied Physics
Abstract:The energy bands and electronic states of hybrid boron nitride (BN) and graphene structures are studied by first principle calculations. The electronic states change from semi-metallic to insulating depending on the number of B and N atoms as well as domain symmetry. When there are unequal numbers of B and N atoms, mid-gap states usually appear around the Fermi level and the corresponding hybrid structure possesses magnetic and semi-metallic properties. However, when the numbers of B and N atoms are equal, a band gap exists indicative of a semiconducting or insulating nature which depends on the structural symmetry.
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