Abstract:GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying strongly-confined 0D and 1D hole systems with strong spin-orbit effects, motivating our development of nanowire transistors featuring Be-doped p-type GaAs nanowires, AuBe alloy contacts and patterned local gate electrodes towards making nanowire-based quantum hole devices. We report on nanowire transistors with traditional substrate back-gates and EBL-defined metal/oxide top-gates produced using GaAs nanowires with three different Be-doping densities and various AuBe contact processing recipes. We show that contact annealing only brings small improvements for the moderately-doped devices under conditions of lower anneal temperature and short anneal time. We only obtain good transistor performance for moderate doping, with conduction freezing out at low temperature for lowly-doped nanowires and inability to reach a clear off-state under gating for the highly-doped nanowires. Our best devices give on-state conductivity 95 nS, off-state conductivity 2 pS, on-off ratio ~$10^{4}$, and sub-threshold slope 50 mV/dec at T = 4 K. Lastly, we made a device featuring a moderately-doped nanowire with annealed contacts and multiple top-gates. Top-gate sweeps show a plateau in the sub-threshold region that is reproducible in separate cool-downs and indicative of possible conductance quantization highlighting the potential for future quantum device studies in this material system.

Enhanced Efficiency of P-Type Doping by Band-Offset Effect in Wurtzite and Zinc-Blende GaAs/InAs-core-shell Nanowires

In Situ Mechanical Resonance Behaviour of Pristine and Defective Zinc Blende GaAs Nanowires

Different Doping Behaviors of Silicon in Zinc Blende and Wurtzite GaAs Nanowires: Implications for Crystal-Phase Device Design

Band structure of n- and p-doped core-shell nanowires

Phosphorus Doped Zn1-xMgxO Nanowire Arrays

Tunable Transport Properties of Dual-Gated InAs/GaSb Core/shell Nanowires

Zn-dopant dependent defect evolution in GaN nanowires

P-Type Znte:Ga Nanowires: Controlled Doping And Optoelectronic Device Application

Growth of Zinc Blende Gaas/Algaas Radial Heterostructure Nanowires by A Two-Temperature Process

Origin of p-Type Doping in Zinc Oxide Nanowires Induced by Phosphorus Doping: A First Principles Study

InAs/InP radial nanowire heterostructures as high electron mobility devices.

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

Modulation doping of GaAs/AlGaAs core-shell nanowires with effective defect passivation and high electron mobility

Tunable N‐type Conductivity and Transport Properties of Ga‐doped ZnO Nanowire Arrays

Enhanced thermoelectric figure of merit in thin GaAs nanowires.

Electronic Structures of [1 1 1]-Oriented Free-Standing InAs and InP Nanowires

Two-Dimensional Energy Band Engineering in GaAs/AlGaAs Core–Shell Nanowires by Crystal-Phase Switching for Charge Manipulation

Doping Dependent Crystal Structures and Optoelectronic Properties of N-Type Cdse:Ga Nanowries

Performance Evaluation of GaAs–GaP Core–Shell-Nanowire Field-Effect Transistors

Towards low-dimensional hole systems in Be-doped GaAs nanowires

Gate Tunable Energy Gap and Negative Magnetoresistance of InAs/GaSb Core/shell Nanowires