Negative Barkhausen Jumps In Permalloy Thin-Film Microstructures

shuqiang yang,geoffrey beach,james l erskine
DOI: https://doi.org/10.1063/1.2400513
IF: 2.877
2006-01-01
Journal of Applied Physics
Abstract:Dual-beam high-resolution magneto-optic Kerr effect polarimetry and magnetic force microscopy (MFM) are used to study Barkhausen jumps in thin-film permalloy microstructures. Negative jumps (changes in local magnetization that oppose the drive field) are always accompanied by a nearly simultaneous positive jump, and the power-law dependence of jump-size statistical distributions of positive and negative jumps are similar. These observations, supported by sequential MFM domain images taken during field-driven reversal, indicate that negative jumps are driven by configurational changes of local domain structure associated with positive jumps that are governed by pinning, exchange, and anisotropy energies. The eddy-current coupling mechanism, that appears to account for negative jumps in bulk materials, is suppressed by sample thickness scaling in the thin-film microstructures. (c) 2006 American Institute of Physics.
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