Abstract:The rapidly developing organic–inorganic hybrid chalcogenide solar cells have now become a hot topic of interest. However, the bandgap of inorganic ferroelectric materials with a typical chalcogenide structure is too wide to match the solar spectrum, while the ferroelectricity of organic-inorganic hybrid chalcogenide materials with a narrow bandgap, meth amide–lead–iodine, is not obvious, and the lead element causes environmental pollution. The recently discovered organic–inorganic hybrid material [C6N2H18]BiI5 with good ferroelectricity and the narrowest bandgap of molecular ferroelectrics can absorb visible light in the range of 380 nm to 660 nm, and compound [C6N2H18]SbI5 with the Bi cognate element Sb was also synthesized. In this paper, we designed the first experiment to prepare thin films by mixing and doping the above two materials in five different molar ratios, and we comparatively studied the changes in crystal structure, surface morphology, and photophysical properties of the prepared multicomponent hybrid films according to the mixing ratio. A theoretical model was developed to calculate and analyze the bandgap of the hybrid doped compounds and compare it with the experimental values. It was found that the absorption spectra of the multicomponent hybrid films were red-shifted relative to the original material, indicating that the forbidden bandwidth was reduced to absorb a wider range of visible light, and the reason for this was thought to be the narrowing of the bandgap due to doping. When the mixing ratio was 0.4:0.6, the bandgap was the narrowest and the light absorption was the best; the highest quality of the film was obtained when the mixing ratio was 0.5:0.5.

Fe-substituted Indium Thiospinels: New Intermediate Band Semiconductors with Better Absorption of Solar Energy

Transition metals doped CuAlSe2 for promising intermediate band materials

Intermediate band induced by p-block metalloid antimony in SnS2 for higher solar energy utilization

Natural Intermediate Band in I 2 -II-IV-VI4 Quaternary Chalcogenide Semiconductors.

Thin‐Film Solar Cells of an Indium‐Modified Silver Antimony Sulfide Selenide Absorber Prepared by Spray Pyrolysis

Half-filled Intermediate Bands in Doped Inorganic Perovskites for Solar Cells.

New Layered II–III–VI Semiconductors: Promising Materials for High Performance Solar Cells

A first-principles study of quaternary thioiodides for stable lead-free solar cells

Intermediate Band Solar Cell Materials Through the Doping of Group-Va Elements (N, P, As and Sb) in Cu2ZnSiSe4.

Ferroelectricity in Ruddlesden-Popper Chalcogenide Perovskites for Photovoltaic Application: the Role of Tolerance Factor

Exploring In$_2$(Se$_{1-x}$Te$_x$)$_3$ alloys as photovoltaic materials

Prediction of intermediate band in Ti/V doped γ-In2S3

A first-principle study of the electronic, mechanical and optical properties of inorganic perovskite Cs2SnI6 for intermediate-band solar cells

Chemically tuned intermediate band states in atomically thin Cu x GeSe/SnS quantum material for photovoltaic applications

Intermediate bands and p orbital tuning the band structure of BiFeO3 for photovoltaic application

Homogroup Bi/Sb Lattice Substitution to Enhance the Photoelectric Properties of Sb2Se3 Crystals

Direct band-gap iodide double perovskite solar cell materials by doping strategy: First-principles predictions

Effect of Doping on the Bandgap of the Organic–Inorganic Hybrid Ferroelectric Material [c6n2h18]bi1−xsbxi5 (0.0 < X < 1.0)

Interface Engineering for High-Efficiency Solution-Processed Cu(In,Ga)(S,Se)2 Solar Cells via a Novel Indium-Doped CdS Strategy

CuPbX3 and AgPbX3 Inorganic Perovskites for Solar cell Applications

Synthesis of Titanium-Doped CdIn2S4 Thin Film and Its Photoelectric Properties for Intermediate Band Solar Cells