Abstract:The development of field-effect transistors (FETs), resonant-tunneling diodes (RTDs), vertical heterostructures and other device structures on the basis of 2D materials is one of the important tasks for producing a new element base for micro and nanoelectronics. The wave function formalism was applied in the development of numerical model of vertical heterostructures based on 2D materials [1, 2]. Combined self-consistent models [3, 4] were adapted for the case of taking into account vertical transport in the conduction band. The influence of various factors on the electric characteristics of the vertical heterostructures based on graphene, h-BN and MoS2 was investigated with the use of the developed model. The IVcharacteristics of such structures were calculated for different number of layers of 2D materials that forms potential barriers and quantum wells. Comparison of the results of simulation of the investigated structures is carried out. A numerical combined model based on a self-consistent numerical solution of the Schrödinger and Poisson equations in the active region of the device was used to calculate the IV-characteristics of GaN/AlGaN-based RTDs with vertical transport [5, 6]. The proposed model was used to study the effect of the aluminum concentration in the barriers on the IV-characteristics of the considered RTDs. Developed quantum drift-diffusion model of FET based on monolayer graphene was described in detail [7, 8]. The model is based on quantum drift-diffusion approximation of carrier transport. Graphene channel is located between topand back-gate dielectrics. With the use of the model simulation of dual-gate FET with channel width 18 μm was considered. A good agreement with experimental data was obtained for number of applied voltages. Adequacy of the model is confirmed by these calculations.

Band Engineering of Graphene Nanomesh Field Effect Transistor under Multiscale Simulation Framework

Simulation of hydrogenated graphene Field-Effect Transistors through a multiscale approach

The electronic structure of graphene nanomesh

Computational Study of Graphene-Based Vertical Field Effect Transistor

Formation of bandgap and subbands in graphene nanomeshes with sub-10 nm ribbon width fabricated via nanoimprint lithography.

Band-gap Scaling of Graphene Nanohole Superlattices

Simulation of Graphene Nanoribbon Field Effect Transistors

Band Structure Effects in Extremely Scaled Silicon Nanowire MOSFETs With Different Cross Section Shapes

Large Scale Graphene/Hexagonal Boron Nitride Heterostructure for Tunable Plasmonics

Quantum Time-Dependent Monte Carlo Simulation of Electron Devices with 2D Linear-Band Materials: a Genuine TeraHertz Signature for Graphene

Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene

Full-scale Simulation of Electron Transport in Nanoporous Graphene: Probing the Talbot Effect

Simulation of various nanoelectronic devices based on 2D materials

The Finite-Size Effect on the Transport Properties in Edge-Modified Graphene Nanoribbon-Based Molecular Devices

Featuring nuanced electronic band structure in gapped multilayer graphene

Energy Gap Tunable Graphene Antidot Nanoribbon MOSFET: A Uniform Multiscale Analysis from Band Structure to Transport Properties

Disorder effects on energy bandgap and electronic transport in graphene-nanomesh-based structures

Band Gap Opening of Graphene by Forming Heterojunctions with the 2d Carbonitrides Nitrogenated Holey Graphene, G-C3n4, and G-Cn: Electric Field Effect

Lithographic band structure engineering of graphene

Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates

Tunable and Sizable Band Gap of Single Layer Graphene Sandwiched Between Hexagonal Boron Nitride