Nonequivalent-F-induced relaxations in LaF 3 single crystals over a broad temperature range

Jing Wang,Chunchang Wang,Xiaohong Sun,Jian Zhang,Jun Zheng,Chao Cheng,Hong Wang,Yide Li,Shouguo Huang
DOI: https://doi.org/10.1007/s10853-015-8944-x
IF: 4.5
2015-01-01
Journal of Materials Science
Abstract:The dielectric properties of LaF 3 single crystals were investigated in the temperature range from 110 to 773 K and the frequency range from 100 Hz to 10 MHz. Two thermally activated relaxations (R1 and R2) and a dielectric anomaly (A) were observed. The lower temperature relaxation (R1) was ascribed to a polaronic relaxations due to fluorine ions diffusion within the F 1 sublattice and fluorine ions hopping in F 1 sublattice. The higher temperature relaxation (R2) is Maxwell–Wagner relaxation due to the blocking of electrodes associated with the ionic exchange between F 1 and F 2,3 sublattices and among the three nonequivalent sublattices. The anomaly appearing in the highest temperature range is related to the inductive effect arising from the coupled electron-ionic inductive response.
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