Abstract:Abstract Ultrafast carrier relaxation in the 2D topological insulator (TI) Bi 2 Se 3 [gapped Dirac surface states (SS)] and how it inherits ultrafast relaxation in the 3D TI Bi 2 Se 3 (gapless Dirac SS) remains a challenge for developing new optoelectronic devices based on these materials. Here ultrashort (~ 100 fs) pumping pulses of ~ 340 nm wavelength (~ 3.65 eV photon energy) were applied to study ultrafast electron relaxation in the 2D TI Bi 2 Se 3 films with a thickness of 2 and 5 quintuple layers (~ 2 and ~ 5 nm, respectively) using transient absorption (TA) spectroscopy in the ultraviolet–visible spectral region (1.65–3.9 eV). The negative and positive contributions of TA spectra were attributed to absorption bleaching that mostly occurs in the bulk states and to the inverse bremsstrahlung type free carrier absorption in the gapped Dirac SS, respectively. Owing to this direct and selective access to the bulk and surface carrier dynamics, we were able to monitor coherent longitudinal optical (LO) phonon oscillations, which were successively launched in the bulk and surface states by the front of the relaxing electron population within the LO-phonon cascade emission. We have also recognized the coherent surface-to-bulk vibrational coupling that appears through the phase-dependent amplitude variations of coherent LO-phonon oscillations. This unique behavior manifests itself predominantly for the topologically trivial insulator phase of the 2D TI Bi 2 Se 3 (2 nm thick film) in the photon energy range (~ 2.0–2.25 eV) where efficient energy exchange between the bulk and surface states occurs. We also found that the coherent surface-to-bulk vibrational coupling significantly weakens with increasing both the Bi 2 Se 3 film thickness and pumping power.

Ultrafast Saturable Absorption in Topological Insulator Bi_2SeTe_2 Nanosheets

Study on Saturable Absorption Characteristics of Bi2Se3 Topological Insulators with Film Thickness Dependence and Its Laser Application

Coherent surface-to-bulk vibrational coupling in the 2D topologically trivial insulator Bi2Se3 monitored by ultrafast transient absorption spectroscopy

Clarifying Ultrafast Carrier Dynamics in Ultrathin Films of the Topological Insulator Bi 2 Se 3 Using Transient Absorption Spectroscopy

Ultrafast Spectroscopy of Bi2Se3 Topological Insulator

Robust Edge States of Quasi-1D Material Ta2NiSe7 and Applications in Saturable Absorbers

Intensity-dependent transition from saturation absorption to reverse saturable absorption ways in TiSxSe2-x (0 ≤ x ≤ 1)

Ultrafast saturable absorption in TiS 2 induced by non-equilibrium electrons and the generation of a femtosecond mode-locked laser.

Ti 2 CT X (T=O, OH or F) Nanosheets As New Broadband Saturable Absorber for Ultrafast Photonics

Ultrafast saturable absorption in TiS<sub>2</sub>induced by non-equilibrium electrons and the generation of a femtosecond mode-locked laser

Nonlinear Optical Absorption of TiTe2 Nanosheets and Its Application for Pulse Laser Generation

High-Index Topological Insulator Resonant Nanostructures from Bismuth Selenide

A femtosecond pulse erbium fiber laser incorporating a saturable absorber based on bulk-structured Bi2Te3 topological insulator

Ultrafast and Large Optical Nonlinearity of a TiSe2 Saturable Absorber in the 2 Μm Wavelength Region

Broadband nonlinear absorption properties of TiS2 nanosheets

Mid-infrared ultra-short mode-locked fiber laser utilizing topological insulator Bi2Te3 nano-sheets as the saturable absorber

Few-layer Nanoplates of Bi2Se3 and Bi2Te3 with Highly Tunable Chemical Potential

Observation of optical absorption correlated with surface state of topological insulator

Few-layer Nanoplates of Bi 2 Se 3 and Bi 2 Te 3 with Highly Tunable Chemical Potential.

Nonlinear optical properties of PtTe<sub>2</sub> based saturable absorbers for ultrafast photonics

In Situ Raman Spectroscopy of Topological Insulator Bi2Te3 Films with Varying Thickness