The atomic configuration and metallic state of extrinsic defects in Nb-doped BiFeO 3 thin films
Lei Liao,Qing Yang,Chen Cai,Yong Zhou,Huacong Sun,Xudan Huang,Pan Chen,Jianlin Wang,Xiaomei Li,Xuezeng Tian,Sheng Meng,Xuedong Bai,Lifen Wang
DOI: https://doi.org/10.1016/j.actamat.2024.119986
IF: 9.4
2024-05-09
Acta Materialia
Abstract:Defects in ferroelectric materials can cause microscopic strain and electron doping, which opens up new possibilities for unique physical properties in nanoelectronics. However, comprehending the relationship between these deep-buried defect configurations and the resulting physical properties is a long-term challenge. Here, utilizing the integrated differential phase imaging technique equipped in scanning transmission electron microscopy combined with energy dispersive X-ray spectroscopy, we show the full element-resolved atomic configuration of characteristic extrinsic defects in Nb-doped epitaxial BiFeO 3 thin films. Atomic-resolution characterization reveals that the Nb doping substitutes Fe at the center of an oxygen octahedron and creates Fe vacancies near the defect core, leading to the formation of one perovskite cell-wide BiNbO 3 chain that is expanded by 19% in perovskite cell volume and rotated by 45° relative to the matrix lattice. Further quantitative analysis of the defect demonstrates that the ferroelectric polarization distribution around the dopant-induced defects displays a "head-to-head" configuration, indicating the accumulation of negative charges. Supported by electron energy loss spectroscopy and density functional theory calculations, the linear defect leads to one-dimensional metallic channels embedded within the ferroelectric BiFeO 3 matrix. These atomic-scale findings establish the structure-functionality relationship of extrinsic defect in Nb-doped BiFeO 3 thin films, providing new insight into their fundamental understanding and potential use in low-dimensional nanoelectronics devices.
materials science, multidisciplinary,metallurgy & metallurgical engineering