Abstract:Ferroelectric LiNbO3 single crystals have piezoelectric, pyroelectric and electro-optic properties and are widely used in nonvolatile memories, sensors, and electro-optic modulators. The material is hard and relatively inert for dying etching using thick Cr/Ni mask layers which are incompatible with the CMOS manufacturing technologies. Moreover, the etching angles are generally below 80 degrees that could result in poor polarization retention and a large imprint effect. Here we developed an etching technique on the basis of the solid-state reaction and wet solution corrosion together that used CMOS-compatible SiO2 masks to fabricate large arrays of LiNbO3 nanodevices in high precision. The LiNbO3 nanopatterns at the regions beyond the SiO2 masks can react with the deposited Al metal below 500 degrees C in formation of amorphous layers in targeted thicknesses that vary with the annealing temperature and time at a reduced atmosphere. The amorphous layers can be dissolved in mixed solutions of H2O, NH4OH, and H2O2 at 85 degrees C, and the etching angles of memory cells in lateral sizes of 20-220 nm can approach 90 degrees after the passivation of the LiNbO3 surface layer. The transmission electron microscope study shows the oxygen deficiency at the surface. After the connection of the cell to two side electrodes, domain switching occurs under an applied horizontal electrode field along the polar Z-axis accompanying the formation of conducting domain walls against the peripheral unswitched domain at the substrate. The read current can highly reach the level of 2-20 mu A in high reliability. This etching technique promotes the large-scale fabrication of LiNbO3 nanodevices on the Si platform.

Nanoparticle Decoration of Ferroelectric Domain Patterns in LiNbO3 Crystal

Polarization State Dependence of Laser-Induced Domain Nucleation in Lithium Niobate Crystals Investigated by Digital Holography

Periodic Ferroelectric Domain Structures Characterization by Scanning Near Field Optical Microscopy

Femtosecond laser writing of lithium niobate ferroelectric nanodomains

Domain Control in Ferroelectric Nanodots Through Surface Charges

On the possibility of domain structure formation in lithium niobate by low energy (< 5 keV) electron beam

All-Optical Domain Inversion in LiNbO3 Crystals by Visible Continuous-Wave Laser Irradiation

Two-dimensional structures of ferroelectric domain inversion in LiNbO3 by direct electron beam lithography

SNOM study of periodically poled ferroelectric domains in LiNbO 3 , LiTaO 3 and Ba 2 NaNb 5 O 15 crystals

Ferroelectric Domain Reversal Dynamics in LiNbO3 Optical Superlattice Investigated with a Real-Time Monitoring System

Ferroelectric Nanodomain Engineering in Bulk Lithium Niobate Crystals in Ultrashort-Pulse Laser Nanopatterning Regime

Observation of Exotic Domain Structures in Ferroelectric Nanodot Arrays Fabricated Via a Universal Nanopatterning Approach

Fabrication of the preferentially orientated LiNbO3 nanoparticles and their ferroelectric behaviors

State of the Art in Crystallization of LiNbO3 and Their Applications

Fabrication of Pattern Poled Lithium Niobate Film and Its Nonlinear Optical Applications

Manipulation of domain structures in LiNbO 3 thin films using focused ion beam

Domain modulation in LiNbO 3 films using litho piezoresponse force microscopy

Nanometer-sized Etching of Lithium Niobate Domain Wall Devices

Ferroelectric domain inversion and its stability in lithium niobate thin film on insulator with different thicknesses

Direct Observation of Ferroelectric Domains in LiTa O 3 Using Environmental Scanning Electron Microscopy

The Creation of a Domain Structure Using Ultrashort Pulse NIR Laser Irradiation in the Bulk of MgO-Doped Lithium Tantalate