135 Numerical Simulation of Fatigue Crack Growth in Heterogeneous Material

masanori kikuchi,yoshitaka wada,kazuhiro suga,yulong li,e a lyapunova,o b naimark

2013-01-01

Abstract:Fully automatic fatigue crack growth simulation system is developed using S-version FEM (S-FEM). This system is extended to fracture in heterogeneous material. In the heterogeneous material, crack tip stress field becomes mixed mode condition, and crack growth path is affected by inhomogeneous materials and mixed mode conditions. Stress Intensity Factors (SIF) in mixed mode condition are evaluated using Virtual Crack Closure Method (VCCM). Criteria for crack growth amount and crack growth path are used based on these SIFs, and growing crack configurations are obtained. At first, basic problem is solved, and results are compared with previously reported ones. It is shown that this system gives adequately accurate estimation of SIFs. Then 2-dimentional fatigue crack growth problems are simulated using this system. crack growth problems are simulated using this system. The first example is a plate with interface between hard and soft materials. Crack tends to grow into soft material through interface. Second example is a plte with distributed hard inclusions. Crack takes zig-zag path by keeping away from hard inclusions. In each cases, crack growth path changes in complicated manner. Changes of SIFs are also shown and discussed. Finally it is shown that this system is useful for the prediction of residual fatigue life in heterogeneous material. INTRODUCTION Fatigue crack growth is important problem for the integrity of structures. To avoid catastrophic accident, predictions of crack growth path and fatigue life are key technologies. As fatigue crack growth occurs in complicated structures, these predictions have met serious difficulties. FEM is usually used for these predictions, but re-meshing process is needed for modeling of growing crack configurations, it has been a bottleneck for the application of FEM to fatigue crack growth problems, especially in three-dimensional field.