Abstract:LLC converter has the advantages of large range voltage regulation ability, zero voltage switch (ZVS), magnetic isolation and is prevalent in data center power supply. As the increasing of power consumption in data center, the power density and efficiency of LLC converter is being pushed higher and higher. With the adoption of wide bandgap gallium nitride high electron mobility transistor (GaN HEMT), power device switching loss and conduction loss have been largely decreased and the switching frequency can be increased significantly. Thus the efficiency and power density promotion of LLC converter mainly dependent on the optimal design of deadtime and resonant parameters. In this paper, the ZVS working frequency boundary and the analytical calculation equations of both resonant and rectifier currents with the consideration of deadtime are deduced first, based on which a GaN device based LLC converter optimal design method is proposed with the realization of high efficiency and ZVS under wide input voltage range. An accurate GaN HEMT device model based LLC virtual prototype has been further constructed to verify the correctness of the proposed optimal design method. At last, the correctness of the proposed design method has been verified by experiment results.

Emi Modeling And Experiment Of A Gan Based Llc Half-Bridge Converter

Modeling and Suppression of Common-Mode Electromagnetic Interference in GaN-Based LLC Converter

Research on High Efficiency Half-bridge LLC Resonant Converter

A Tri-Slope Gate Driving GaN DC–DC Converter with Spurious Noise Compression and Ringing Suppression for Automotive Applications

Modeling and Prediction of Common-Mode Electromagnetic Interference for GaN-Based LLC Resonant Converters

Virtual Prototype and GaN HEMT Based High Frequency LLC Converter Design

EMI Prediction and Filter Design for MHz GaN Based LLC Half-Bridge Converter

A Fast EMI Model Based on Equivalent Interference Sources in Medium-Voltage Cascaded H-Bridge System

High-Frequency High-Efficiency LLC Module with Planar Matrix Transformer for CRPS Application Using GaN Power IC

EMI Noise Reduction in GaN-based Full-bridge LLC Converter

Research of active EMI filter for Gallium Nitride based high frequency resonant converter

High-Frequency Modeling of Common-Mode and Differential-Mode Impedances in LLC Resonant Converters

Modeling and Prediction of Common Mode Electromagnetic Interference in GaN-Based Switching Power Converters

Multi-Domain Modeling and Design Optimization of Synchronous Rectifiers for SiC-Based High- Load-Current LLC Converter

A Multi-conductor Distributed Capacitance Equivalent Model of Planar Transformer for GaN-based LLC Converter

Common-Mode EMI Modeling and Analysis for GaN-Based Full-Bridge CRM PFC under Unipolar PWM Scheme

Digital Synchronous Rectifier Control Using Extended Harmonics Impedance Model for High-Frequency GaN-Based LLC Converters

Analysis and Comparison of the Radiated Electromagnetic Interference Generated by Power Converters With Si MOSFETs and GaN HEMTs

Analysis of GaN Based Full-bridge CLLC Resonant Converter Considering Output Capacitances under Light-load Conditions

Re-examination of ZVS Condition for MHz LLC Converter Operating at Resonant Frequency

Optimal design of GaN HEMT based high efficiency LLC converter