Abstract:As power efficiency becomes essential in automotive applications, DC-DC converters are widely employed [1]. However, size and thermal limits have made it challenging to continue using standard CMOS-based converters. Gallium Nitride (GaN) FETs, on the other hand, have a much higher conductivity with small size/capacitance in comparison to silicon FETs, enabling a highly efficient power conversion at high switching frequency (f SW ). However, there are several issues that must be resolved before using GaN in automotive. High f SW incurs larger di/dt and dv/dt transitions which injects high frequency electromagnetic interference (EMI) noise into the input bus. This creates unwanted noise or even a malfunction in a safety-critical system. A bulky input filter can reduce EMI, but it greatly increases size and cost. Several techniques [2-5] are reported to mitigate EMI. Frequency hopping using discrete frequencies is proposed in [2], but cannot spread the frequency evenly to lower the peak noise effectively. Alternatively, a series resistor is typically added at the gate of the GaN FET to slow down the transition [3-4]. However, the switching loss is dramatically increased. To mitigate this, adjustable driving strength is proposed in [5]. Unfortunately, the sensing and driver delays confine its use in low f SW applications, where the switch node rising time is several tens or hundreds of ns. Another issue of high f SW operation is that it causes significant current and voltage spikes due to the parasitics at the drain/source of the high side GaN FET (M H ), which could lead to GaN VDS breakdown or damage on logic-level FETs. Thus, EMI noise suppression and reliable operation of GaN FETs remain as major challenges in realizing high f SW power converters for automotive-use.

Analysis and Comparison of the Radiated Electromagnetic Interference Generated by Power Converters With Si MOSFETs and GaN HEMTs

A Tri-Slope Gate Driving GaN DC–DC Converter with Spurious Noise Compression and Ringing Suppression for Automotive Applications

25.2 A 10mhz 3-to-40v VIN Tri-Slope Gate Driving GaN DC-DC Converter with 40.5dbµv Spurious Noise Compression and 79.3% Ringing Suppression for Automotive Applications

EMI Emission from Gate Drive Circuit of Boost Converter

Reliability-Driven Assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV Inverters

Performance Analysis of a Single-phase GaN-based 3L-ANPC Inverter for Photovoltaic Applications

Comparative Analysis of CM EMI for Boost Converter Using Si/SiC Hybrid Switch

Performance Evaluation of 40-V/10-A GaN HEMT Versus Si MOSFET for Low-Voltage Buck Converter Application

A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs

Emi Modeling And Experiment Of A Gan Based Llc Half-Bridge Converter

Modeling and Suppression of Common-Mode Electromagnetic Interference in GaN-Based LLC Converter

Determining Far-Field EMI From Near-Field Coupling of a Power Converter

Analysis of Conducted EMI Mechanism of AC / DC Converter

Conducted EMI Estimation on GaN Step-up Resonant Converter for Electric Propulsion System

A Comparative Study of GaN HEMT and Si MOSFET-Based Active Clamp Forward Converters

Conducted EMI reduction in IGBT-based converters

Modeling and Prediction of Common Mode Electromagnetic Interference in GaN-Based Switching Power Converters

Analysis for Crosstalk of SiC-MOSFET in a Bridge Circuit and Its Active-Clamped Driver Based Suppression Methods

Investigation of GaN and Si Based Full-Bridge Converters for DC Motor Drive

Study on Radiated Emission Factors and Their Effects in a Boost Switched Mode Power Supply

Modeling and Prediction of Common-Mode Electromagnetic Interference for GaN-Based LLC Resonant Converters