Deterministic Manipulation of Multi‐State Polarization Switching in Multiferroic Thin Films
Chao Chen,Deyang Chen,Peilian Li,Minghui Qin,Xubing Lu,Guofu Zhou,Xingsen Gao,Jun‐Ming Liu
DOI: https://doi.org/10.1002/adfm.202208244
IF: 19
2022-12-17
Advanced Functional Materials
Abstract:By combining the out‐of‐plane electric field and in‐plane trailing field, 71° ferroelastic switching and 180° ferroelectric switching paths can be deterministically selected in multiferroic BiFeO3 thin films, enabling the achievement of four polarization states (I+, I‐, II+ and II‐) and the reversible switching of these multi‐state ferroelectric polarizations. Deterministically controllable multi‐state polarizations in ferroelectric materials are promising for the application of next‐generation non‐volatile multi‐state memory devices. However, the achievement of multi‐state polarizations has been inhibited by the challenge of selective control of switching pathways. Herein, an approach to selectively control 71° ferroelastic and 180° ferroelectric switching paths by combining the out‐of‐plane electric field and in‐plane trailing field in multiferroic BiFeO3 thin films with periodically ordered 71° domain wall is reported. Four‐state polarization states can be deterministically achieved and reversibly controlled through precisely selecting different switching paths. These studies reveal the ability to obtain multiple polarization states for the realization of multi‐state memories and magnetoelectric coupling‐based devices.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology