Electric Field Controlled Magnetic Properties In Ferroelectric/Ferromagnet Heterostructures
Li Xi,Chenglong Jia,Desheng Xue
DOI: https://doi.org/10.1360/TB-2019-0248
2019-01-01
Chinese Science Bulletin
Abstract:With the arrival of the era of big data, non-volatile, high speed of reading and writing, high storage density, low power consumption and miniaturized memory have become the main trend of information storage development in the future. Although there are many ways for information storage, magnetic storage using magnetization reversal of magnetic moment is still the main body for information storage. For the magnetic information reading, the magnetic tunnel junction (MTJ) is widely used based on the magnetoresistance effect. In terms of magnetic information writing, the conduction wires generated magnetic field, the spin polarized current induced spin-transfer torque and spin Hall effect induced spin-orbit torque can be used to manipulate the magnetization. However, for the mentioned approaches the applied current density for magnetization manipulation should be very high, which is disadvantageous for practical application due to the increased energy consumption. Comparing with magnetic field and electric current driving magnetization reversal, using electric field to control the magnetization reversal of ferromagnetic materials in ferroelectric (FE)/ferromagnetic (FM) heterostructure junction, via the ferroelectricity, ferromagnetism, ferroelasticity and magnetoelectric coupling effects, has much advantages, for example, the high storage density, and the low energy consumption. Thus, the magnetic properties regulation in FE/FM heterostructure by electric field has become one of the research hotspots. In this paper, the researches on electric field controlled magnetic properties in FE/FM heterostructures are systematically reviewed. At first, we show that the magnetization switching can be achieved in ferromagnetic thin films by piezo actuator generated strain. Unfortunately, the switching is volatile. The volatility is disadvantage for information storage. In order to solve this problem, a special kind of FE substrate PMN-PT is employed due to its excellent ferroelectricity and non-volatility. The non-volatile magnetization switching, the magnetic anisotropy variation, and multistate magnetic storage are achieved by applying the electric field to PMN-PT/FM heterostructures. Moreover, the epitaxial ferromagnetic thin films on single crystal PMN-PT substrate have been fabricated to realize the electric field driving magnetic anisotropy variation, as well as the dynamics response. Next, we summarize the behaviors of the magnons driven by magnetoelectric coupling effect. Finally, we point out the development trend in the field of electric field driven magnetic properties variation in the future.