Lateral Electric‐Field‐Controlled Perpendicular Magnetic Anisotropy and Current‐Induced Magnetization Switching in Multiferroic Heterostructures
Mengxi Wang,Qi Guo,Xiaoguang Xu,Zeyu Zhang,Zengyao Ren,Libai Zhu,Kangkang Meng,Jikun Chen,Yong Wu,Jun Miao,Yong Jiang
DOI: https://doi.org/10.1002/aelm.202000229
IF: 6.2
2020-05-25
Advanced Electronic Materials
Abstract:<p>A strain‐mediated perpendicular magnetic anisotropy (PMA) and current‐induced magnetization switching via spin–orbit torque (SOT) in PbMg<sub>1/3</sub>Nb<sub>2/3</sub>O<sub>3</sub>‐PbTiO<sub>3</sub> (PMN‐PT)/Ta/Pt/Co/Pt ferromagnetic heterostructures are reported. It is found that the PMA changes regularly with the preloaded lateral electric field. The SOT‐based current‐induced magnetization switching also shows a reversible trend via applying a lateral electric field. Domain wall propagation driven by electric field is observed directly under a fixed perpendicular magnetic field by magnetic optical Kerr (MOKE) microscope. These behaviors can be attributed to the strain from the PMN‐PT substrates induced by the piezoelectric effect under electric field. Basing on the domain wall motion mechanism, repeatable resistance states of the Hall bar can be controlled by external electric field under a small auxiliary magnetic field, which enables the information recorded in the device can be programmed by voltage. This study provides a potential method to design the electric field controlled spintronic devices.</p>
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology