Label-free and Rapid Electrical Detection of Htsh with CMOS-compatible Silicon Nanowire Transistor Arrays.
Na Lu,Pengfei Dai,Anran Gao,Jari Valiaho,Pasi Kallio,Yuelin Wang,Tie Li
DOI: https://doi.org/10.1021/am505915y
IF: 9.5
2014-01-01
ACS Applied Materials & Interfaces
Abstract:Now a human thyroid stimulating hormone (hTSH) assay has been considered as a screening tool for thyroid disease. However, some existing methods employed for in-hospital diagnosis still suffer from labor-intensive experimental steps, and expensive instrumentation. It is of great significance to meet the ever growing demand for development of label-free, disposable, and low-cost productive hTSH detection biosensors. Herein, we demonstrate a novel sensing strategy for highly sensitive and selective immunodetection of hTSH by using a CMOS-compatible silicon nanowire field effect transistor (SiNW-FET) device. The SiNW chips were manufactured by a top-down approach, allowing for the possibility of low-cost and large-scale production. By using the antibody-functionalized SiNW-FET nanosensors, we performed the label-free and rapid electrical detection of hTSH without any nanoparticle conjugation or signal amplifications. The proposed SiNW biosensor could detect hTSH binding down to a concentration of at least 0.02 mIU/L (0.11 pM), which is more sensitive than other sensing techniques. We also investigated the influence of Debye screening with varied ionic strength on hTSH detection sensitivity, and real-time measurements on various concentrations of the diluted buffer. The simple, label-free, low-cost, and miniaturized SiNW-FET chip has a potential perspective in point-of-care diagnosis of thyroid disease.