Abstract:Giant magnetoresistance was first experimentally discovered in three-dimensional magnetic tunnel junctions (MTJs) in late 1980s and is of great importance in nonvolatile memory applications. How to achieve a magnetoresistance as large as possible is always a central task in the study of MTJs. However, it is normally only of the order of magnitude of tens of percent in traditional MTJs. The ideal situation is the metal-insulator transition together with the magnetization reversal of one magnetic lead. In this work, we will show that this can be achieved with a two-dimensional ferromagnetic zigzag SiC nanoribbon junction based on quantum transport calculations performed with the combination of density functional theory and non-equilibrium Green's function. Specifically, with the magnetization configuration switching of the two leads from parallel to anti-parallel, the junction will change abruptly from a conducting state to an insulating state, although the two leads are always metallic, with both spin up and spin down channels crossing the Fermi level simultaneously. Extensive analysis indicates that the insulating state in the anti-parallel magnetic configuration originates not from any present mechanisms that cause full suppression of electron transmission but from the momentum direction mismatching. The finding suggests a fantastic mechanism for achieving magnetoresistance or electrical switching in nanoscale devices by manipulating band dispersion.

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