Abstract:Half-metals and spin gapless semiconductors are promising candidates for spintronic applications due to the complete (100%) spin polarization of electrons around the Fermi level. Based on recent experimental and theoretical findings of graphene-like monolayer transition metal carbides and nitrides (also known as MXenes), we demonstrate from first-principles calculations that monolayer Ti2C and Ti2N exhibit nearly half-metallic ferromagnetism with the magnetic moments of 1.91 and 1.00 UB per formula unit, respectively, while monolayer V2C is a metal with instable antiferromagnetism, and monolayer V2N is a nonmagnetic metal. Interestingly, under a biaxial strain, there is a phase transition from nearly half-metal to truly half-metal, spin gapless semiconductor, and metal for monolayer Ti2C. Monolayer Ti2N is still a nearly half-metal under a proper biaxial strain. Large magnetic moments can be induced by the biaxial tensile and compressive strains for monolayer V2C and V2N, respectively. We also show that the structures of these four monolayer MXenes are stable according to the calculated formation energy and phonon spectrum. Our investigations suggest that, unlike monolayer graphene, monolayer MXenes Ti2C and Ti2N without vacancy, doping or external electric field exhibit intrinsic magnetism, especially the half-metallic ferromagnetism and spin gapless semiconductivity, which will stimulate further studies on possible spintronic applications for new two-dimensional materials of MXenes.

Tensile Strain Induced Half-Metallicity in Graphene-Like Carbon Nitride

Tensile Properties of a Boron/nitrogen-Doped Carbon Nanotube–graphene Hybrid Structure

Strain-induced Programmable Half-Metal and Spin-Gapless Semiconductor in an Edge-Doped Boron Nitride Nanoribbon

Origin of the half-metallic properties of graphitic carbon nitride in bulk and confined forms

Strain Induced Spin-Splitting and Half-Metallicity in Antiferromagnetic Bilayer Silicene under Bending

Electronic Structure and Magnetism in G-C4n3 Controlled by Strain Engineering

Effective Zeeman Splitting in Bent Lateral Heterojunctions of Graphene and Hexagonal Boron Nitride: A New Mechanism Towards Half-Metallicity

Metal-Free Magnetism and Half-Metallicity of Carbon Nitride Nanotubes: A First-Principles Study

Dirac half-semimetallicity and antiferromagnetism in graphene nanoribbon/hexagonal boron nitride heterojunctions

Strain-induced Magnetic Transitions in Half-Fluorinated Single Layers of BN, GaN and Graphene.

Nitrogen-induced Local Spin Polarization in Graphene on Cobalt

Half Metallicity in Hybrid BCN Nanoribbons

C3N—A 2D Crystalline, Hole‐Free, Tunable‐Narrow‐Bandgap Semiconductor with Ferromagnetic Properties

Monolayer MXenes: promising half-metals and spin gapless semiconductors

Half-Metallicity in Graphitic C3n4 Nanoribbons: an Ab Initio Study

Novel Penta-Graphene Nanotubes: Strain-Induced Structural and Semiconductor-Metal Transitions

Half-Metallicity in Triangulene-based Superatomic Graphene

Transition Metal-Free Half-Metallicity in Two-Dimensional Gallium Nitride with a Quasi-Flat Band.

Half-Metallicity in Hybrid Graphene/Boron Nitride Nanoribbons with Dihydrogenated Edges

Tetragonal Mexican-Hat Dispersion and Switchable Half-Metal State with Multiple Anisotropic Weyl Fermions in Penta-Graphene

Strain‐Mediated High Conductivity in Ultrathin Antiferromagnetic Metallic Nitrides