Abstract:The development of organic–inorganic hybrid thin films structures to enhance detection efficiency has garnered significant attention. This outstanding performance can primarily be attributed to the advantages of long carrier lifetime and diffusion length, high light absorption coefficients, and low exciton binding energy. To better passivate the surface defects of the film layer and optimize the electron–hole layer, this paper proposes an effective method for enhancing the responsivity of sandwich metal-semiconductor-metal (MSM) type inorganic/organic photodetectors with a SiO 2 /ZnO/P3HT:PC 61 BM/Pt nanoparticles (NPs) structure. By modifying the Pt NPs deposited directly onto the sample to induce localized surface plasmon resonance (LSPR), the external quantum efficiency (EQE) of the photodetector (PD) is significantly improved across a broad wavelength range from 300 to 680 nm. The maximum responsivity of 0.51 A/W and photocurrent of 0.042 A occur at a wavelength of 375 nm in the SiO 2 /ZnO/P3HT:PC 61 BM/Pt NPs device. The response rise time of the SiO 2 /ZnO/P3HT:PC 61 BM/Pt NPs sample is 1.2 s, which is more than 5 times shorter than that of devices without Pt NPs treatment. At the same time, the dark current is reduced. The as-fabricated SiO 2 /ZnO/P3HT:PC 61 BM/Pt NPs sample was characterized using XRD, XPS, EDS, TEM, SEM, and AFM. These measurements demonstrate that the tunneling hole injection is enhanced by intensified energy level bending, induced by both trapped electrons in these aggregations and accumulated ones, as investigated through Poynting's theorem.

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