Abstract:Silicon photonics is now widely accepted as a key technology in a variety of systems. But owing to material limitations, now it is challenging to greatly improve the performance after decades of development. Here, we show a high-performance broadband photodetector with significantly enhanced sensitivity and responsivity operating over a wide wavelength range of light from near-ultraviolet to near-infrared at low power consumption. The specially designed textured top ceiling electrode works effectively as an antireflection layer to greatly improve the absorption of near-infrared light, thereby overcoming the absorption limitation of near-infrared light. Instead of the conventional p-n junction and p-intrinsic-n junction, we introduce a similar to 15 nm thick alumina insulator layer between a p-type Si substrate and n-type ZnO nanowire (NW) arrays, which significantly enhances the charge carrier separation and collection efficiency. The photosensing responsivity and sensitivity are found to be nearly 1 order of magnitude higher than that of a reference device of p-Si/n-ZnO NW arrays, significantly higher than the commercial silicon photodiodes as well. The light-induced charge carriers flow across the appropriate thickness of insulator layer via the quantum mechanical Fowler-Nordheim tunneling mechanism. By virtue of the piezo-phototronic effect, the charge density at the interfaces can be tuned to alter the energy bands and the potential barrier distance for tunneling. Additionally, along with the use of incident light of different wavelengths, the influence of the insulator layer on the transport of electrons and holes separately is further investigated. The demonstrated concepts and study would lead to sensitivity improvement, quality enhancement of data transfer, decrease of power consumption, and cost reduction of silicon photonics.

Enhanced Near-Infrared Photodetection with Avalanche Gain in Silicon Microdisk Resonators Integrated with P-N Diodes

Avalanche-Enhanced Photocurrents in Pin Silicon Waveguides at 1550 Nm Wavelength

Dramatically Enhanced Broadband Photodetection by Dual Inversion Layers and Fowler-Nordheim Tunneling

Photocurrent Generation In A Microdisk Resonator Integrated With Interleaved P-N Junctions

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

All-Silicon Waveguide Avalanche Photodetectors with Ultrahigh Gain-Bandwidth Product and Low Breakdown Voltage

40 Gb/s All-Silicon Photodetector Based on Microring Resonators

Silicon single-photon avalanche diodes with nano-structured light trapping

Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon

On-Chip Optical Power Monitor Using Periodically Interleaved P-N Junctions Integrated on a Silicon Waveguide

Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes

Microstructured silicon photodetector

Avalanche-Like Electric-Field-Induced Photocurrent Gain in Resonant Tunneling Hydrogenated Nanocrystalline Silicon System

High-power Si-Ge Photodiode Assisted by Doping Regulation.

An Amorphous Silicon Photodiode with 2 Thz Gain-Bandwidth Product Based on Cycling Excitation Process

Insights into the pyro-phototronic effect in p-Si/n-ZnO nanowires heterojunction toward high-performance near-infrared photosensing

All-silicon Near-Infrared Phototransistor Based on Surface-State Absorption

Near‐Infrared Light Trapping and Avalanche Multiplication in Silicon Epitaxial Microcrystals

Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives

A Silicon Sub-Bandgap Near-Infrared Photodetector with High Detectivity Based on Textured Si/Au Nanoparticle Schottky Junctions Covered with Graphene Film

Highly Sensitive Narrowband Si Photodetector With Peak Response at Around 1060 nm