Two-terminal protonic devices with synaptic-like short-term depression and device memory.

Erik E Josberger,Yingxin Deng,Wei Sun,Rylan Kautz,Marco Rolandi

DOI: https://doi.org/10.1002/adma.201400320

2014-01-01

Abstract:Two-terminal protonic devices with PdHx proton conducting contacts and a Nafion channel achieve 25 ms spiking, short term depression, and low-energy memory switching.

What problem does this paper attempt to address?

Two-terminal Proton Conducting Devices with Synaptic Behavior and Memory

Marco Rolandi,Erik E. Josberger,Yingxin Deng,Wei Sun,Rylan Kautz

DOI: https://doi.org/10.1109/drc.2014.6872389

2014-01-01

Abstract:With the recent physical demonstration of memristive-based devices low-power two terminal devices with memory and learning functions have advanced electronics and neuromorphic computing. To this end, typically slow moving ions are coupled with fast moving electrons. Ionic motion affords memory, with electronic current as the output signal. Here, we introduce fully ionic two-terminal devices in which protons provide both memory and output signal. These devices exhibit synaptic-like reversible short-term depression, memory, and can be turned “ON” and “OFF” with as little as 30 fJ of energy per bit if appropriately miniaturized.
Solution-Processed Synaptic Memristors Based on Halide Perovskite Nanocrystals

Sixian Liu,Jiuhui Guan,Lei Yin,Lue Zhou,Junli Huang,Yuncheng Mu,Shuyao Han,Xiaodong Pi,Gang Liu,Pingqi Gao,Shu Zhou

DOI: https://doi.org/10.1021/acs.jpclett.2c02900

IF: 6.888

2022-01-01

The Journal of Physical Chemistry Letters

Abstract:Exploring new materials and structures to construct synaptic devices represents a promising route to fundamentally approach novel forms of computing. Nanocrystals (NCs) of halide perovskites possess unique charge transport characteristics, i.e., ionic-electronic coupling, holding considerable promise for energy-efficient and reconfigurable artificial synapses. Herein, we report solution-processed thin-film memristors from all-inorganic CsPbBr3 perovskite NCs, functioning as an electrically programmable analog memory with good stability. The devices are demonstrated to successfully emulate a number of essential synaptic functions with low power consumption, including reversible potentiation and depression, short-term plasticity (STP), paired-pulse facilitation (PPF), and long-term plasticity (LTP), such as spike-number-dependent plasticity (SNDP), spike-rate-dependent plasticity (SRDP), spike-timing-dependent plasticity (STDP), and spike-voltage-dependent plasticity (SVDP). It is proposed that a coupled capacitive and inductive phenomenon originating from charge trapping and ion migration in CsPbBr3 NC films, controlled by the amplitude and timing of the programming pulses, defines the degree of synaptic plasticity. A transition emerges from the fast trap related capacitive regime to a slow ionic inductive regime, which enables continuous change of the film resistance and the magnitude of the electronic current, analogous to the synaptic weight modulation in biological synapses.
Optoelectronic Synaptic Devices Based on the Heterostructure of Silicon Nanomembrane and P3HT

Peiwen Huang,Lei Yin,Yayao Li,Yue Wang,Deren Yang,Xiaodong Pi

DOI: https://doi.org/10.1109/edtm50988.2021.9421050

2021-01-01

Abstract:Optoelectronic synaptic devices based on silicon nanomembrane (Si NM) and Poly(3-hexylthiophene) (P3HT) are fabricated. Synaptic functionalities such as excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and transition from short-term memory (STM) to long-term memory (LTM) are mimicked by using light to stimulate the Si NM/P3HT optoelectronic synaptic devices. The “learning-forgetting-relearning” behavior of a human brain may be simulated by using these devices.
Proton-Doped Strongly Correlated Perovskite Nickelate Memory Devices

Koushik Ramadoss,Fan Zuo,Yifei Sun,Zhen Zhang,Jianqiang Lin,Umesh Bhaskar,SangHoon Shin,Muhammad Ashraful Alam,Supratik Guha,Dana Weinstein,Shriram Ramanathan

DOI: https://doi.org/10.1109/led.2018.2865776

IF: 4.8157

2018-01-01

IEEE Electron Device Letters

Abstract:We demonstrate memory devices based on proton doping and re-distribution in perovskite nickelates (RNiO3, R=Sm,Nd) that undergo filling-controlled Mott transition. Switching speeds as high as 30 ns in two-terminal devices patterned by electron-beam lithography is observed. The state switching speed reported here are 300X greater than what has been noted with proton-driven resistance switching to date. The ionic-electronic correlated oxide memory devices also exhibit multi-state non-volatile switching. The results are of relevance to use of quantum materials in emerging memory and neuromorphic computing.
Hodgkin–Huxley Artificial Synaptic Membrane Based on Protonic/Electronic Hybrid Neuromorphic Transistors

Yang Ming Fu,Chang Jin Wan,Li Qiang Zhu,Hui Xiao,Xiao Dong Chen,Qing Wan

DOI: https://doi.org/10.1002/adbi.201700198

IF: 4.0531

2018-01-01

Advanced Biosystems

Abstract:AbstractIontronics is a newly emerging interdisciplinary concept that bridges electronics and ionics. It provides new opportunities for biomimic information processing. Iontronic devices can act as building blocks for neuromorphic platforms. Here, a proof‐of‐principle Hodgkin–Huxley artificial synaptic membrane is proposed for the first time based on inorganic proton conductor. Phosphosilicate glass‐based proton conductor electrolyte demonstrates unique short‐term volatile charging behaviors, indicating potential short‐term synaptic plasticity applications. By using protonic/electronic hybrid oxide transistor configuration, dynamic synaptic membrane potential responses are triggered with gate current spikes. Typical resting potential, excitatory/inhibitory postsynaptic potential behaviors, and membrane depolarization/activation behaviors are mimicked on the proposed Hodgkin–Huxley artificial synaptic membrane. Moreover, proton‐related electrostatic coupling enables the device to possess short‐term synaptic plasticities with low power consumption. The proposed Hodgkin–Huxley artificial synaptic membrane provides a new prototype for neuromorphic system applications.
Memory And Learning Behaviors Mimicked In Nanogranular Sio2-Based Proton Conductor Gated Oxide-Based Synaptic Transistors

Chang Jin Wan,Li Qiang Zhu,Ju Mei Zhou,Yi Shi,Qing Wan

DOI: https://doi.org/10.1039/c3nr02987e

IF: 6.7

2013-01-01

Nanoscale

Abstract:In neuroscience, signal processing, memory and learning function are established in the brain by modifying ionic fluxes in neurons and synapses. Emulation of memory and learning behaviors of biological systems by nanoscale ionic/electronic devices is highly desirable for building neuromorphic systems or even artificial neural networks. Here, novel artificial synapses based on junctionless oxide-based protonic/electronic hybrid transistors gated by nanogranular phosphorus-doped SiO2-based proton-conducting films are fabricated on glass substrates by a room-temperature process. Short-term memory (STM) and long-term memory (LTM) are mimicked by tuning the pulse gate voltage amplitude. The LTM process in such an artificial synapse is due to the proton-related interfacial electrochemical reaction. Our results are highly desirable for building future neuromorphic systems or even artificial networks via electronic elements.
Efficient Two-terminal Artificial Synapse Based on a Network of Functionalized Conducting Polymer Nanowires

Chunli Jiang,Yu Zhang,Bobo Tian,Chunhua Luo,Ni Zhong,Jianlu Wang,Xiangjian Meng,Hui Peng,Chun-gang Duan,Junhao Chu

DOI: https://doi.org/10.1039/c9tc02802a

IF: 6.4

2019-01-01

Journal of Materials Chemistry C

Abstract:Artificial synaptic devices are the hardware basis of highly efficient neuromorphic networks with low energy consumption. Great challenges still remain in this research field, like improving the response speed, reducing the energy consumption, and exploring new materials and working principles. In this work, we synthesize a new terthiophene monomer functionalized with a conjugated acrylic acid group (MTAA). The electropolymerization of MTAA results in the formation of a three-dimensional network of conducting polymer nanowires (PMTAA). Based on this nanowire network, a two-terminal artificial synaptic device with multilevel conductance states is fabricated. The device is successfully used to emulate important biological synaptic functions, including paired-pulse facilitation (PPF), spike rate-dependent plasticity (SRDP) and spike timing-dependent plasticity (STDP). The carboxyl groups in the polymer provide a possible way to fast neutralize the positively charged polymer backbone during the oxidation process, which results in the fast response of the device to electrical pulses with an ultralow energy consumption of 6.9 fJ per synaptic event.
Proton Conductor Gated Synaptic Transistor Based on Transparent IGZO for Realizing Electrical and UV Light Stimulus

Weijun Cheng,Renrong Liang,He Tian,Chuanchuan Sun,Chunsheng Jiang,Xiawa Wang,Jing Wang,Tian-Ling Ren,Jun Xu

DOI: https://doi.org/10.1109/jeds.2018.2875976

2018-01-01

IEEE Journal of the Electron Devices Society

Abstract:Synaptic transistors mimicking the biological synapse's short term plasticity and short-term memory property were demonstrated using the amorphous indium-gallium-zinc oxide channel in combination with the nanogranular SiO2 as the gate oxide. The lowest energy consumption was ~1.08 pJ per pulse activity and the operating voltage was within 100 mV. The device's plasticity and memory characteristics can be explained by the movement of protons in the insulating layer. The proton relaxation was revealed by two ways of dual sweeping: continuous and discontinuous sweepings. We observed that the excitatory postsynaptic current (EPSC) rose as the voltage decreased anomaly during the backward sweeping process. In the electrical stimulus, both the short-term potentiation and depression were observed for this proposed device. The amplitude of the EPSC changed with the pulse number following a saturating exponential function. For the electrical stimulus under constant illumination, the UV light wavelength, intensity and duration time were found to have little effect on the paired pulse facilitation. While in the light stimulus, the light frequency promoted the paired pulse facilitation and had more effect on the synapse's plasticity than the other light pulse parameters including intensity, numbers and width.
Artificial Synapses: A Reliable All‐2D Materials Artificial Synapse for High Energy‐Efficient Neuromorphic Computing (Adv. Funct. Mater. 27/2021)

Jian Tang,Congli He,Jianshi Tang,Kun Yue,Qingtian Zhang,Yizhou Liu,Qinqin Wang,Shuopei Wang,Na Li,Cheng Shen,Yanchong Zhao,Jieying Liu,Jiahao Yuan,Zheng Wei,Jiawei Li,Kenji Watanabe,Takashi Taniguchi,Dashan Shang,Shouguo Wang,Wei Yang,Rong Yang,Dongxia Shi,Guangyu Zhang

DOI: https://doi.org/10.1002/adfm.202170197

IF: 19

2021-07-01

Advanced Functional Materials

Abstract:In article number <a href="https://doi.org/10.1002/adfm.202011083">2011083</a>, Congli He, Guangyu Zhang, and co-workers report an all-2D materials two-terminal floating-gate memory as an artificial synapse device for high energy-efficient neuromorphic computing. It exhibits linear and symmetric weight update behaviors with high reliability and tunability. A large number of states up to 3000, high switching speed of 40 ns, and low energy consumption of 18 fJ for a single pulse event are realized, demonstrating great potential for high-speed and low-power neuromorphic computing applications. 

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
A sub-1-volt analog metal oxide memristive-based synaptic device for energy-efficient spike-based computing systems

Cheng-Chih Hsieh,Anupam Roy,Yao-Feng Chang,Davood Shahrjerdi,Sanjay K. Banerjee

DOI: https://doi.org/10.1063/1.4971188

2016-03-13

Abstract:Nanoscale metal oxide memristors have potential in the development of brain-inspired computing systems that are scalable and efficient1-3. In such systems, memristors represent the native electronic analogues of the biological synapses. However, the characteristics of the existing memristors do not fully support the key requirements of synaptic connections: high density, adjustable weight, and low energy operation. Here we show a bilayer memristor that is forming-free, low-voltage (~|0.8V|), energy-efficient (full On/Off switching at ~2pJ), and reliable. Furthermore, pulse measurements reveal the analog nature of the memristive device, that is it can be directly programmed to intermediate resistance states. Leveraging this finding, we demonstrate spike-timing-dependent plasticity (STDP), a spike-based Hebbian learning rule4. In those experiments, the memristor exhibits a marked change in the normalized synaptic strength (>30 times) when the pre- and post-synaptic neural spikes overlap. This demonstration is an important step towards the physical construction of high density and high connectivity neural networks.

Mesoscale and Nanoscale Physics
Solution-processed Inorganic Δ-Phase CsPbI3 Electronic Synapses with Short- and Long-Term Plasticity in a Crossbar Array Structure

Jun Ge,Zelin Ma,Weilong Chen,Xucheng Cao,Jianfeng Yan,Huaheng Fang,Jieli Qin,Zhiyu Liu,Shusheng Pan

DOI: https://doi.org/10.1039/d0nr03242e

IF: 6.7

2020-01-01

Nanoscale

Abstract:Electronic synapses based on memristive devices can potentially open a niche area for neuromorphic computing by replicating the function of biological synapses with high fidelity. Recently, two-terminal memristors based on halide perovskites have demonstrated outstanding memristive properties and a variety of synaptic characteristics, combining with their additional advantages such as a solution-processed fabrication method and low crystalline temperature. However, the concerns over the chemical and phase stability of halide perovskites greatly hinder their practical applications. In this study, by using a simple single-step spin-coating method, we report artificial synapses with superior ambient stability (>90 days under ambient conditions) based on fully inorganic nonperovskite δ-phase CsPbI3 in a cross-bar array architecture. The threshold switching memristive device exhibits a moderate ON/OFF ratio, a relatively low operation voltage (0.3 V) and high endurance (>5 × 105). More importantly, the electronic device can emulate synaptic characteristics such as short-term plasticity, paired-pulse facilitation, and the transition from short-term memory to long-term memory with a high output signal-to-noise ratio (>102). This work represents the first record for artificial synapses based on nonperovskite CsPbI3 and will be a step toward achieving low-cost and high-density practical synapse arrays.
Freestanding Artificial Synapses Based on Laterally Proton-Coupled Transistors on Chitosan Membranes

Yang Hui Liu,Li Qiang Zhu,Ping Feng,Yi Shi,Qing Wan

DOI: https://doi.org/10.1002/adma.201502719

IF: 29.4

2015-01-01

Advanced Materials

Abstract:Freestanding synaptic transistors are fabricated on solution-processed chitosan membranes. A short-term memory to long-term memory transition is observed due to proton-related electrochemical doping under repeated pulse stimulus. Moreover, freestanding artificial synaptic devices with multiple presynaptic inputs are investigated, and spiking logic operation and logic modulation are realized.
Long-memory Retention and Self-Powered Ultraviolet Artificial Synapses Realized by Multi-Cation Metal Oxide Semiconductors

Lingyan Zheng,Ruifu Zhou,Shuwen Xin,Haofei Cong,Yuanbin Qin,Peilong Xu,Xuhai Liu,Fengyun Wang

DOI: https://doi.org/10.1039/d3tc01026k

IF: 6.4

2023-01-01

Journal of Materials Chemistry C

Abstract:We fabricated synaptic transistors based on IZTO-6 nanowires, which can achieve long-memory retention of long-term potentiation. Meanwhile, Al/IZTO-6/Ni devices indicate that MOS based synapses have self-powered capability.
Adaptive Synaptic Memory via Lithium Ion Modulation in RRAM Devices

Chih‐Yang Lin,Jia Chen,Po‐Hsun Chen,Ting‐Chang Chang,Yuting Wu,Jason K. Eshraghian,John Moon,Sangmin Yoo,Yu‐Hsun Wang,Wen‐Chung Chen,Zhi‐Yang Wang,Hui‐Chun Huang,Yi Li,Xiangshui Miao,Wei D. Lu,Simon M. Sze

DOI: https://doi.org/10.1002/smll.202003964

IF: 13.3

2020-09-29

Small

Abstract:Biologically plausible computing systems require fine‐grain tuning of analog synaptic characteristics. In this study, lithium‐doped silicate resistive random access memory with a titanium nitride (TiN) electrode mimicking biological synapses is demonstrated. Biological plausibility of this RRAM device is thought to occur due to the low ionization energy of lithium ions, which enables controllable forming and filamentary retraction spontaneously or under an applied voltage. The TiN electrode can effectively store lithium ions, a principle widely adopted from battery construction, and allows state‐dependent decay to be reliably achieved. As a result, this device offers multi‐bit functionality and synaptic plasticity for simulating various strengths in neuronal connections. Both short‐term memory and long‐term memory are emulated across dynamical timescales. Spike‐timing‐dependent plasticity and paired‐pulse facilitation are also demonstrated. These mechanisms are capable of self‐pruning to generate efficient neural networks. Time‐dependent resistance decay is observed for different conductance values, which mimics both biological and artificial memory pruning and conforms to the trend of the biological brain that prunes weak synaptic connections. By faithfully emulating learning rules that exist in human's higher cortical areas from STDP to synaptic pruning, the device has the capacity to drive forward the development of highly efficient neuromorphic computing systems.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Inorganic Proton Conducting Electrolyte Coupled Oxide-Based Dendritic Transistors for Synaptic Electronics

Chang Jin Wan,Li Qiang Zhu,Ju Mei Zhou,Yi Shi,Qing Wan

DOI: https://doi.org/10.1039/c3nr05882d

IF: 6.7

2014-01-01

Nanoscale

Abstract:Ionic/electronic hybrid devices with synaptic functions are considered to be the essential building blocks for neuromorphic systems and brain-inspired computing. Here, artificial synapses based on indium-zinc-oxide (IZO) transistors gated by nanogranular SiO2 proton-conducting electrolyte films are fabricated on glass substrates. Spike-timing dependent plasticity and paired-pulse facilitation are successfully mimicked in an individual bottom-gate transistor. Most importantly, dynamic logic and dendritic integration established by spatiotemporally correlated spikes are also mimicked in dendritic transistors with two in-plane gates as the presynaptic input terminals.
Electronic synapses mimicked in bilayer organic-inorganic heterojunction based memristor

Qiufan Liao,Yan Wang,Ziyu Lv,Ziyu Xiong,Jinrui Chen,Guo Ping Wang,Su-Ting Han,Ye Zhou

DOI: https://doi.org/10.1016/j.orgel.2021.106062

IF: 3.868

2021-03-01

Organic Electronics

Abstract:Electronic synapses implementing in-memory computing system could overcome the developing limitation on the energy efficiency of traditional von Neumann architecture. Compared with the high sensitivity of biological synapses, lower responsivity of the memristive synapses was found via the electrical stimulations. Here, poly{2,2-(2,5-bis(2-octyldodecyl)-3,6-dioxo-2,3,5,6- tetrahydropyrrolo[3,4-c]pyrrole-1,4-diyl)-dithieno[3,2-b]thiophene-5,5-diyl-alt-thiophen-2,5-diyl} (PDPPBTT)/zinc oxide (ZnO) based heterojunction is found to exhibit stable memristive switching behavior, which originates from the confined formation/rupture of filament in the two-layer interface region as the ions migrate with different transport rates in two layers. The implementing synaptic functions in the sensitive memristive device can realize the short-term plasticity and long-term plasticity when stimulated by the applied electrical signals with different stimulating rate. Similar to the biological synapse, the memory loss, memory transition, and the critical role of stimulation rate on the transition process, can be achieved in the as-prepared memristor device. The systematic demonstrations on the synaptic emulation may facilitate building bio-inspired device-level neuromorphic systems.

materials science, multidisciplinary,physics, applied
Characteristics of Synaptic Function of Mesoporous Silica-Titania and Mesoporous Titania Lateral Electrode Devices

Dhanashri Vitthal Desai,Jongmin Yang,Hyun Ho Lee

DOI: https://doi.org/10.3390/nano13111734

2023-05-25

Abstract:In this paper, we have fabricated non-volatile memory resistive switching (RS) devices and analyzed analog memristive characteristics using lateral electrodes with mesoporous silica-titania (meso-ST) and mesoporous titania (meso-T) layers. For the planar-type device having two parallel electrodes, current-voltage (I-V) curves and pulse-driven current changes could reveal successful long-term potentiation (LTP) along with long-term depression (LTD), respectively, by the RS active mesoporous two layers for 20~100 μm length. Through mechanism characterization using chemical analysis, non-filamental memristive behavior unlike the conventional metal electroforming was identified. Additionally, high performance of the synaptic operations could be also accomplished such that a high current of 10-6 Amp level could occur despite a wide electrode spacing and short pulse spike biases under ambient condition with moderate humidity (RH 30~50%). Moreover, it was confirmed that rectifying characteristics were observed during the I-V measurement, which was a representative feature of dual functionality of selection diode and the analog RS device for both meso-ST and meso-T devices. The memristive and synaptic functions along with the rectification property could facilitate a chance of potential implementation of the meso-ST and meso-T devices to neuromorphic electronics platform.
Copper-Based 3-Terminal Synaptic Cell with Multiple Resistance Levels

Teodor Todorov,Takashi Ando,Frances M Ross,John A. Ott,Jianshi Tang,Douglas Bishop,John Collins,Vijay Narayanan,John Rozen

DOI: https://doi.org/10.1149/ma2019-01/23/1165

2019-01-01

ECS Meeting Abstracts

Abstract:Synaptic elements capable of reversible multilevel analog switching have the potential to become key components in future neuromorphic computing technologies and exceed the practical limits of current digital technology. Artificial neural networks based on analog synapses could potentially deliver performance one step closer to the human brain which far surpasses the efficiency of current computing capabilities by many orders of magnitude. For example, this could be achieved by mapping the synaptic weights of deep neural net on the multi-bit device and performing the multiply-accumulate operation in-memory during learning or inferencing cycles [1]. While different types of 2-terminal emerging non-volatile memory, such as phase change memory (PCM) or resistive RAM (ReRAM), permit some degree of reversible analog tuneability, they exhibit significant stochasticity, and asymmetry which are detrimental to learning accuracy. In addition to precise and predictable control of the resistance state, decoupling the write and read cycle is a major challenge for the practical application of such devices. Memistor-based three-terminal devices allow decoupling the read and write steps, potentially permitting drastic increase in device operational precision and reliability. Electrochemical copper plating devices of this type for the purpose of “adaptive switching circuits” were conceived as early as the1960s in the ADALINE neuron element [2] and more recently as “atomic transistors” [3], however these devices utilized liquid electrolytes which are a big challenge for practical fabrication of an integrated chip. Other systems, such as lithium-based intercalation materials have been used for solid-state three-terminal synaptic devices and scaled to sub-micron dimensions [4], [5]. However. Li+ based systems are chemically reactive and sensitive to atmospheric exposure while also possessing a residual open circuit potential which opposes continued potentiation and creates challenges for voltage-driven neural networks. Here, we report a solid-state, lithium-free, Cu+-based 3-terminal synaptic device capable of reversible multilevel switching. Cu+ is driven in or out of a channel to create a conductance change and Cu+ ion transport is achieved through a solid electrolyte by writing pulses of only 100mV with near-zero open circuit potential. We analyze device performance, physical, and chemical characteristics, and provide insight into operation mechanisms and limitations. Exceptionally high ionic conductivity of 0.36S/cm (significantly higher than any reported solid-state lithium-based system) was measured in the electrolyte by impedance spectroscopy which is critical for high speed device operation. The first device prototypes were over 100 microns in size with very low dynamic range and channel resistance of only several hundred ohms, which is too low for practical applications. We demonstrate a path for increasing the dynamic range and channel resistance of our devices, as well as first steps towards transfer to sub-micron scale fabrication. Figure 1 Impedance spectrum of solid copper electrolyte with inset micrograph of completed device in measurement setup (a). Schematics of device structure and operation (b). Channel resistivity change during cycling measured between writing pulses (two consecutive cycles of 5, +100mV, and 5,-100mV pulses each). Reference: [1] T. Gokmen, Y Vlasov, Frontiers in Neuroscience 2016, 10, 333 [2] B. Wirdow. Technical Report No1553-2, Office of Naval Research 1960 [3] Xie et al. Beilstein J. Nanotechnol. 2017, 8, 530–538 [4] Fuller et al. Li-Ion Synaptic Transistor for Low Power Analog Computing. Adv. Mater. 2017, 29 [5] J.Tang et al, presented at IEEE IEDM 2018, 13.1 Figure 1
Energy-efficient synaptic devices based on planar structured h-BN memristor

Yisen Wang,Haowei Liu,Pei Liu,Wenlong Lu,Jingqin Cui,Xinyi Chen,Miao Lu

DOI: https://doi.org/10.1016/j.jallcom.2022.164775

IF: 6.2

2022-07-01

Journal of Alloys and Compounds

Abstract:Synapses with short-term plasticity (STP) and long-term plasticity (LTP) behaviors are the key factors for the development of complex neuromorphological systems. Two dimensional (2D) materials have shown great potential at synaptic devices because of their unique properties. In this work, synaptic devices with a planar structure using insulated 2D hexagonal boron nitride (h-BN) as resistance switching (RS) medium were studied for the first time. Different from vertical h-BN synaptic devices, planar h-BN synaptic devices support in-plane transport of metal ions through nanoscale channels, which weakens the influence of material defects, morphology, thickness and uniformity on device performance. The Ag/h-BN/Ag planar structured synaptic devices exhibited low switching voltage (< 1 V), high On/Off ratio (> 108), wide range of tunable operation current (0.1 nA–1 mA), and coexistence of volatile (SET power ≤ 50 nW) and non-volatile (SET power ≥ 700 nW) RS characteristic. In addition, the multi-stage resistance states could be modulated by setting different SET power. The device efficiently mimicked the STP and LTP synaptic functions, and the energy consumption per synaptic event was as low as 170 fJ/spike for STP and 540 fJ/spike for LTP, respectively. In addition, the multi-memory states of synaptic devices could be obtained by adjusting the postsynaptic current (PSC).

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
A Two-Terminal Electric-Double-Layer Synaptic Device With Short-Term Plasticity

Jiabin Wang,Yu-Xing Li,Ying Zhang,He Tian,Renrong Liang,Yi Yang,Tian-Ling Ren

DOI: https://doi.org/10.1109/edtm.2018.8421438

2018-01-01

Abstract:A two-terminal synaptic device with short-term synaptic plasticity was demonstrated based on electric-double-layer effect between solid-state SiO2 electrolyte and indium-zinc oxide (IZO) semiconductor film for the first time. Plasma enhanced chemical deposition was used to deposit SiO2 electrolyte film at room temperature. The formation of electrical double layer (EDL) at the IZO/SiO2 interface was utilized to mimic signal transmission in biological synapse. Spike-width-dependent synaptic plasticity and high-frequency filter were emulated, which are important forms of short-term synaptic plasticity for computational functions in human brain. The device can be used for neuromorphic electronic systems.

Two-terminal protonic devices with synaptic-like short-term depression and device memory.

Two-terminal Proton Conducting Devices with Synaptic Behavior and Memory

Solution-Processed Synaptic Memristors Based on Halide Perovskite Nanocrystals

Optoelectronic Synaptic Devices Based on the Heterostructure of Silicon Nanomembrane and P3HT

Proton-Doped Strongly Correlated Perovskite Nickelate Memory Devices

Hodgkin–Huxley Artificial Synaptic Membrane Based on Protonic/Electronic Hybrid Neuromorphic Transistors

Memory And Learning Behaviors Mimicked In Nanogranular Sio2-Based Proton Conductor Gated Oxide-Based Synaptic Transistors

Efficient Two-terminal Artificial Synapse Based on a Network of Functionalized Conducting Polymer Nanowires

Proton Conductor Gated Synaptic Transistor Based on Transparent IGZO for Realizing Electrical and UV Light Stimulus

Artificial Synapses: A Reliable All‐2D Materials Artificial Synapse for High Energy‐Efficient Neuromorphic Computing (Adv. Funct. Mater. 27/2021)

A sub-1-volt analog metal oxide memristive-based synaptic device for energy-efficient spike-based computing systems

Solution-processed Inorganic Δ-Phase CsPbI3 Electronic Synapses with Short- and Long-Term Plasticity in a Crossbar Array Structure

Freestanding Artificial Synapses Based on Laterally Proton-Coupled Transistors on Chitosan Membranes

Long-memory Retention and Self-Powered Ultraviolet Artificial Synapses Realized by Multi-Cation Metal Oxide Semiconductors

Adaptive Synaptic Memory via Lithium Ion Modulation in RRAM Devices

Inorganic Proton Conducting Electrolyte Coupled Oxide-Based Dendritic Transistors for Synaptic Electronics

Electronic synapses mimicked in bilayer organic-inorganic heterojunction based memristor

Characteristics of Synaptic Function of Mesoporous Silica-Titania and Mesoporous Titania Lateral Electrode Devices

Copper-Based 3-Terminal Synaptic Cell with Multiple Resistance Levels

Energy-efficient synaptic devices based on planar structured h-BN memristor

A Two-Terminal Electric-Double-Layer Synaptic Device With Short-Term Plasticity