Effect of Substrate and Intermediate Layer on the Conductivity and Charge Transport Properties of Epitaxial BaTiO3−δ Films
Cheng Yang,Weiyao Wei,Yanfen Gong,Longsen Yan,Kai Zhao,Jian Zhou,Jiajun Feng,Aihua Zhang,Minghui Qin,Min Zeng,Zhen Fan,Xingsen Gao,Guofu Zhou,Xubing Lu,J-M Liu
DOI: https://doi.org/10.1088/1361-6463/aa98ad
2017-01-01
Abstract:The conductivity and charge transport behaviors of BaTiO3-delta are usually regulated by physical defect or chemical metal ion doping. In this work, we demonstrated that the conductivity and charge transport properties of epitaxial BaTiO3-delta films can be greatly tuned by using different substrates and intermediate layers between the substrate and BaTiO3-delta film. The temperature dependence of the resistivity experiments show that metallic behavior was observed in BaTiO3-delta films deposited on SrTiO3 substrate. While much higher resistance and semiconductor behavior were observed in BaTiO3-delta films that deposited on MgO and DyScO3 substrates. Additionally, the BaTiO3-delta films' conductivity can be tuned over a wide range from semiconductor to metallic conduction through inserting one intermediate SrTiO3 layer with thicknesses varying from 10 nm to 300 nm. Conversely, the conductivity of BaTiO3-delta films deposited on SrTiO3 substrates can be greatly reduced from metallic to semiconductor conduction through the insertion of one intermediate LaAlO3 film with thickness varying from 0 nm to 150 nm. The different conductivity and charge transport behaviors of BaTiO3-delta films are assumed to be closely related to the oxygen vacancy exchange/blocking effect between BaTiO3-delta film and substrate or intermediate layer.