Tuning the Electron Transport at Single Donors in Zinc Oxide with a Scanning Tunnelling Microscope.

Hao Zheng,Alexander Weismann,Richard Berndt

DOI: https://doi.org/10.1038/ncomms3992

IF: 16.6

2014-01-01

Nature Communications

Abstract:In devices like the single-electron transistor the detailed transport properties of a nanostructure can be measured by tuning its energy levels with a gate voltage. The scanning tunnelling microscope in contrast usually lacks such a gate electrode. Here we demonstrate tuning of the levels of a donor in a scanning tunnelling microscope without a third electrode. The potential and the position of the tip are used to locally control band bending. Conductance maps in this parameter space reveal Coulomb diamonds known from three-terminal data from single-electron transistors and provide information on charging transitions, binding energies and vibrational excitations. The analogy to single-electron transistor data suggests a new way of extracting these key quantities without making any assumptions about the unknown shape of the scanning tunnelling microscope tip.