Ru doping Induced Spin Frustration and Enhancement of the Room‐temperature Anomalous Hall effect in La2/3Sr1/3MnO3 films
Enda Hua,Liang Si,Kunjie Dai,Qing Wang,Huan Ye,Kuan Liu,Jinfeng Zhang,Jingdi Lu,Kai Chen,Feng Jin,Lingfei Wang,Wenbin Wu
DOI: https://doi.org/10.1002/adma.202206685
IF: 29.4
2022-09-21
Advanced Materials
Abstract:In transition‐metal‐oxide heterostructures, the anomalous Hall effect (AHE) is a powerful tool for detecting the magnetic state and revealing intriguing interfacial magnetic orderings. However, achieving a larger AHE at room temperature in oxide heterostructures is still challenging due to the dilemma of mutually strong spin‐orbit coupling and magnetic exchange interactions. Here, we exploit the Ru doping‐enhanced AHE in La2/3Sr1/3Mn1‐xRuxO3 epitaxial films. As the B‐site Ru doping level increases up to 20%, the anomalous Hall resistivity at room temperature can be enhanced from nΩ∙cm to μΩ∙cm scale. Ru doping leads to strong competition between ferromagnetic double‐exchange interaction and antiferromagnetic super‐exchange interaction. The resultant spin frustration and spin‐glass state facilitate a strong skew‐scattering process, thus significantly enhancing the extrinsic AHE. Our findings could pave a feasible approach for boosting the controllability and reliability of oxide‐based spintronic devices. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology