Abstract:Abstract We deposited high-quality molybdenum disulfide (MoS 2 ) monolayer and multilayer crystals on SiO 2 /Si substrates, by means of a chemical vapor deposition (CVD) process at atmospheric pressure. Notably, NaCl salt was used as component of the precursors to assist the growth of MoS 2 crystals, which were intended for use as the active channel layer in the fabrication of field-effect transistors (FETs). The resulting MoS 2 crystals from this CVD process were analyzed by optical, scanning electron, and atomic force microscopies, and by Raman and photoluminescence spectroscopies. The optical images and the micrographs obtained by SEM revealed the formation of dispersed MoS 2 crystals with a triangular shape all over the SiO 2 surface. The thickness of the MoS 2 crystals, analyzed by atomic force microscopy, showed minimum values of around 0.7 nm, confirming the formation of monolayers. Additionally, multilayers with larger thickness were also identified. The Raman and photoluminescence spectra of the MoS 2 crystals corroborated the formation of single and multiple layers. The fabrication of the FET back-SiO 2 -gate configuration was made by depositing patterned source and drain Ti contacts on the dispersed MoS 2 crystals to achieve the Ti/MoS 2 /SiO 2 /Si layer stacks. MoS 2 -based FETs with one and three layers were assembled and their electrical response analyzed by I–V output and transfer curves showing the typical characteristics of an n -type semiconductor channel operating in depletion mode. The electrical performance parameters of the devices, such as mobility and threshold voltage, were also determined from this analysis. Finally, to enhance their electrical response, the MoS 2 -based devices were thermally annealed at 200 °C for 30 min in Ar atmosphere. The increase in the mobility of the device was 176% compared to the device before the treatment.

Layer-By-Layer Thinning Of Mos2 By Thermal Annealing

Layer Thinning of MoS2 Flakes by Thermal Annealing in Air

Layer-by-Layer Thinning of MoS2 by Plasma

Self-feeding Formation of Atomically Thin Molybdenum Nanoflakes on MoS2 Monolayer

Enhancing the Interlayer Adhesive Force in Twisted Multilayer MoS2by Thermal Annealing Treatment

Substrate Modified Thermal Stability Of Mono- And Few-Layer Mos2

Laser Thinning and Patterning of MoS2 with Layer-by-Layer Precision

Laser‐Assisted Thermomechanical Thinning of MoTe2 in Nanoscale Lateral Resolution

Laser-thinning of MoS2: on demand generation of a single-layer semiconductor

Thin Tungsten Telluride Layer Preparation by Thermal Annealing.

Effect Of Processing Parameters On Microstructure Of Mos2 Ultra-Thin Films Synthesized By Chemical Vapor Deposition Method

Layer thickness-dependent phonon properties and thermal conductivity of MoS2

Impact of thermal annealing on the interaction between monolayer MoS2 and Au

Facile Preparation of Few-layer MoS2-NS by Liquid-Phase Ultrasonic Exfoliation

From MoO2@MoS2 Core-Shell Nanorods to MoS2 Nanobelts

Layer-controlled precise fabrication of ultrathin MoS2 films by atomic layer deposition

Selective Surface Modification and Layer Thinning of MoS 2 via Ultraviolet-Light Irradiation in an Ionic Solution: Implications for Multifunctional Nanoelectronic Devices

Selective surface modification and layer thinning of MoS2 via ultraviolet light irradiation in ionic solution

Effect of Thickness and Thermal Treatment on the Electrical Performance of 2D MoS2 Monolayer and Multilayer Field-Effect Transistors

Towards Low-Temperature CVD Synthesis and Characterization of Mono- or Few-Layer Molybdenum Disulfide

Ultrashort Pulse Laser Annealing of Amorphous Atomic Layer Deposited MoS$_2$ Films