Abstract:Bilayer graphene has attracted wide attention due to its unique band structure and bandgap tunability under specific (Bernal or AB) stacking order. However, it remains challenging to tailor the stacking order and to simultaneously produce large-scale and high-quality bilayer graphene. This work introduces a fast and reliable method of growing high-quality Bernal stacked large-area (>3 in. X 3 in.) bilayer graphene film or trilayer graphene domains (30 pm x 30 mu m) using chemical vapor deposition (CVD) on engineered Cu-Ni alloy catalyst films. The AB stacking order is evaluated by Raman spectra, electron diffraction pattern, and dual gate field-effect-transistor (FET) measurements, and a near-perfect AB stacked bilayer graphene coverage (>98%) is obtained. The synthesized bilayer and trilayer graphene with Bernal stacking exhibit electron mobility as high as 3450 cm(2)/(V.s)and 1500 cm(2)/(V.s), respectively, indicating comparable quality with respect to exfoliated bilayer and trilayer graphene. The record high (for CVD bilayer graphene) ON to OFF current ratios (up to 15) obtained for a large number (>50) of dual-gated FETs fabricated at random across the large-area bilayer graphene film also corroborates the success of our synthesis technique. Moreover, through catalyst engineering, growth optimization, and element analysis of catalyst, it is shown that achieving surface catalytic graphene growth mode and precise control of surface carbon concentration are key factors determining the growth of high quality and large area Bernal stacked bilayer graphene on Cu-Ni alloy. This discovery can not only open up new vistas for large-scale electronic and photonic device applications of graphene but also facilitate exploration of novel heterostructures formed with emerging beyond graphene two-dimensional atomic crystals.

Large-area Bernal-stacked bi-, tri-, and tetralayer graphene.

Controllable and Rapid Synthesis of High-Quality and Large-Area Bernal Stacked Bilayer Graphene Using Chemical Vapor Deposition

Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition

Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method

Synchronous Growth of High‐Quality Bilayer Bernal Graphene: From Hexagonal Single‐Crystal Domains to Wafer‐Scale Homogeneous Films

Chemical Vapor Deposition Growth of Bernal-Stacked Bilayer Graphene by Edge-Selective Etching with H2O

Synthesis Of Large-Area Single-Crystal Graphene

Large Scale Synthesis of Bi-layer Graphene in Strongly Coupled Stacking Order

Layer-by-Layer AB-Stacked Bilayer Graphene Growth Through an Asymmetric Oxygen Gateway

Bi- and Trilayer Graphene Solutions

Controlled Growth of Bilayer Graphene on Space-Confined Cu Substrates

Formation of bilayer bernal graphene: layer-by-layer epitaxy via chemical vapor deposition.

Chemical Vapor Deposition Growth of Large Single-Crystal Bernal-Stacked Bilayer Graphene from Ethanol

Graphene films with large domain size by a two-step chemical vapor deposition process

Large-Area Synthesis of High-Quality and Uniform Monolayer Graphene Without Unexpected Bilayer Regions

Direct Growth of Graphene/Hexagonal Boron Nitride Stacked Layers

Criteria for the Growth of Large-Area Adlayer-Free Monolayer Graphene Films by Chemical Vapor Deposition

Large-area Single-Crystal AB-bilayer and ABA-trilayer Graphene Grown on a Cu/Ni(111) Foil

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

Fast synthesis of large-area bilayer graphene film on Cu

Layer-by-layer Growth of Bilayer Graphene Single-Crystals Enabled by Proximity Catalytic Activity