Abstract:Recently, graphene has gained a lot of attention in the electronic industry due to its unique properties and has paved the way for realizing novel devices in the field of electronics. For the development of new device applications, it is necessary to grow large wafer-sized monolayer graphene samples. Among the methods to synthesize large graphene films, chemical vapor deposition (CVD) is one of the promising and common techniques. However, during the growth and transfer of the CVD graphene monolayer, defects such as wrinkles, cracks, and holes appear on the graphene surface. These defects can influence the electrical properties and it is of interest to know the quality of graphene samples non-destructively. Electrical impedance tomography (EIT) can be applied as an alternate method to determine conductivity distribution non-destructively. The EIT inverse problem of reconstructing conductivity is highly non-linear and is heavily dependent on measurement accuracy and modeling errors related to an accurate knowledge of electrode location, contact resistances, the exact outer boundary of the graphene wafer, etc. In practical situations, it is difficult to eliminate these modeling errors as complete knowledge of the electrode contact impedance and outer domain boundary is not fully available, and this leads to an undesirable solution. In this paper, a difference imaging approach is proposed to estimate the conductivity change of graphene with respect to the reference distribution from the data sets collected before and after the change. The estimated conductivity change can be used to locate the defects on the graphene surface caused due to the CVD transfer process or environment interaction. Numerical and experimental results with graphene sample of size 2.5 × 2.5 cm are performed to determine the change in conductivity distribution and the results show that the proposed difference imaging approach handles the modeling errors and estimates the conductivity distribution with good accuracy.

Graphene Conductance Uniformity Mapping

Quantitative mapping of large area graphene conductance

Correlation Between THz AC and Micro-Four-Point-Probe DC Conductivity Mapping of Graphene Sheets

Mapping Conductance and Switching Behavior of Graphene Devices In Situ

Mapping nanoscale carrier confinement in polycrystalline graphene by terahertz spectroscopy

Sub-micrometer four-point probe transport measurements on graphene

Theoretical analysis of a dual-probe scanning tunneling microscope setup on graphene

Direct Four-Probe Measurement of Grain-Boundary Resistivity and Mobility in Millimeter-Sized Graphene

Sensitive Characterization of the Graphene Transferred onto Varied Si Wafer Surfaces via Terahertz Emission Spectroscopy and Microscopy (TES/LTEM)

Centimeter-scale high-resolution metrology of entire CVD-grown graphene sheets.

Microwave Propagation along Graphene at Microscopic and Macroscopic Scales

Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy

Direct Probing of Imperfection-Induced Electrical Degradation in Millimeter-Scale Graphene on SiO2 Substrates

Imaging Conductivity Changes in Monolayer Graphene Using Electrical Impedance Tomography

Terahertz Conductivity Mapping of Graphene

A Non-Contact Graphene Surface Scattering Rate Characterization Method at Microwave Frequency by Combining Raman Spectroscopy and Coaxial Connectors Measurement

Direct Chemical-Vapor-Deposition-Fabricated, Large-Scale Graphene Glass with High Carrier Mobility and Uniformity for Touch Panel Applications.

Non-invasive Scanning Raman Spectroscopy and Tomography for Graphene Membrane Characterization

Case Studies of Electrical Characterisation of Graphene by Terahertz Time-Domain Spectroscopy

Giant Magnetoresistance in a Chemical Vapor Deposition Graphene Constriction

Ultrabroadband THz Conductivity of Gated Graphene In- and Out-of-equilibrium