Anomalous high capacitance in a coaxial single nanowire capacitor

Zheng Liu,Yongjie Zhan,Gang Shi,Simona Moldovan,Mohamed Gharbi,Li Song,Lulu Ma,Wei Gao,Jiaqi Huang,Robert Vajtai,Florian Banhart,Pradeep Sharma,Jun Lou,Pulickel M. Ajayan
DOI: https://doi.org/10.1038/ncomms1833
IF: 16.6
2012-01-01
Nature Communications
Abstract:Building entire multiple-component devices on single nanowires is a promising strategy for miniaturizing electronic applications. Here we demonstrate a single nanowire capacitor with a coaxial asymmetric Cu-Cu 2 O-C structure, fabricated using a two-step chemical reaction and vapour deposition method. The capacitance measured from a single nanowire device corresponds to ~140 μF cm −2 , exceeding previous reported values for metal–insulator–metal micro-capacitors and is more than one order of magnitude higher than what is predicted by classical electrostatics. Quantum mechanical calculations indicate that this unusually high capacitance may be attributed to a negative quantum capacitance of the dielectric–metal interface, enhanced significantly at the nanoscale.
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