Improving the thermoelectric performance of double half-Heusler compounds ZrNi(In,Sb)
Shiyang He,Amin Bahrami,Pingjun Ying,Lars Giebeler,Xiang Zhang,Kornelius Nielsch,Ran He
DOI: https://doi.org/10.1039/d2ta02413f
IF: 11.9
2022-06-01
Journal of Materials Chemistry A
Abstract:The complexity of crystal structure displays an intriguing role in manipulating properties in thermoelectrics, spintronics, and batteries. In comparison to the widely-studied ternary half-Heusler thermoelectric compounds, the quaternary double half-Heusler compounds are promising due to their intrinsically low lattice thermal conductivities (κL). However, they received much fewer investigations due to the limited material availability. In this study, we report a new double half-Heusler based on ZrNi(In, Sb). Upon tuning the ratio of In/Sb from 0.5/0.5 to 0.4/0.6, and reducing the nominal concentration of Zr and Ni by 10%, we greatly reduce the intensities of the impurity-phase peaks in the diffraction patterns. An even better phase purity, joint with an optimized power factor is realized by substituting Co at the Ni sites. Further alloying Hf at the Zr sites enhances the point defect scattering of phonons, which yielded a minimum κL of ~1.8 W⸱m−1⸱K−1 and a maximum zT of ~0.5 for Zr0.7Hf0.2Ni0.65Co0.25In0.4Sb0.6 at 973 K. Our work thus confirms the intrinsically low κL of ZrNi(In, Sb) double half-Heusler compounds and indicates their promising applications upon further improving the electrical transport properties.
materials science, multidisciplinary,chemistry, physical,energy & fuels