Abstract:Graphene, a monolayer of carbon atoms tightly packed into a two-dimensional (2D) hexagonal lattice, has recently been successfully isolated from highly ordered pyrolytic graphite (HOPG) and shown to be thermodynamically stable and to exhibit astonishing transport properties, such as an electron mobility of 25;000 cm2=Vs and velocity of 10 cm=s at room temperature [1–3]. With the high carrier mobility enabled by its unique electronic structure, graphene has attracted many research efforts recently. Initial works have demonstrated the great potential of graphene for modern electronics applications. These efforts are focused on overcoming the challenges faced to incorporate graphene into microelectronic applications. The three particular challenges are developing a synthesis technique to manufacture graphene over wafer-scale areas, opening an energy bandgap in graphene, and forming a high-quality gate dielectric on the surface of graphene. An interesting differentiation between the many well-established semiconductor materials in microelectronic industry and graphene is how it was discovered. Most semiconductor materials are created through deposition or melt processes, but the origin of graphene is unique. The first successfully isolated sheet of graphene was formed by Geim and Novoselov through a mechanical exfoliation technique which used cellophane tape to remove and subsequently transfer graphene sheets from HOPG to SiO2 [2]. This produced graphitic flakes tens of microns in size upon which electronic devices were fabricated. The pioneering work on isolating graphene has been recognized by earning its discoverers the Nobel Prize in Physics for 2010. Since the mechanical exfoliation technique does not require expensive equipment, this approach is still widely used for research purposes. Various alternative methods have been studied and developed to fabricate uniform graphene

Atomic-scale transport in epitaxial graphene

Directional transport of molecular mass on graphene by straining

Electronic and Transport Properties of Graphene Nanoflakes with the Protrusion of Different Widths

Electronic transport in graphene-based heterostructures

Electronic transport properties of graphene with Stone-Wales defects and multiple vacancy chains: a theoretical study

Selective Nanoscale Mass Transport Across Atomically Thin Single Crystalline Graphene Membranes.

Chapter 6 Magneto-Transport on Epitaxial Graphene

Transport properties of epitaxial graphene formed on the surface of a superconductor

Influence of Edge Imperfections on the Transport Behavior of Graphene Nanomeshes.

Ab-initio transport fingerprints for resonant scattering in graphene

Electronic transport in polycrystalline graphene

Sub-micrometer four-point probe transport measurements on graphene

Electronic properties and quantum transport in Graphene-based nanostructures

Epitaxial Graphene Electronic Structure And Transport

Understanding the contact characteristics in single or multi-layer graphene devices: The impact of defects (carbon vacancies) and the asymmetric transportation behavior

Free-standing Graphene at Atomic Resolution

Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment

Electronic transport close to boundaries of semi-infinite graphene and their interfaces

Electrical Control of Intervalley Scattering in Graphene Via the Charge State of Defects

Surface Polar Phonon Dominated Electron Transport in Graphene

Er intercalation and its impact on transport properties of epitaxial graphene