High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells
j jadczak,l bryja,k ryczko,m kubisa,arkadiusz wojs,m potemski,feng liu,d r yakovlev,m bayer,c a nicoll,i farrer,d a ritchie
DOI: https://doi.org/10.1063/1.4896158
IF: 4
2014-01-01
Applied Physics Letters
Abstract:We report on low temperature, polarization resolved, high magnetic field (up to 23 T) photoluminescence experiments on high mobility asymmetric GaAs quantum wells. At high magnetic fields, we detect two strong emission lines of the neutral and positively charged excitons (X and X+) and a series of weaker lines of the excitons bound to ionized acceptors (AX(-)). From polarization energy splittings of these lines, we determine the hole Lande factors (g(h)) of different complexes. For X and X+, g(h) initially grows with magnetic field and then saturates at g(h) = 0.88 and 1.55, respectively; for AX(-)'s, g(h) begins from a high value (from 6 to 11 at zero field) and decreases with the field growth. This contrasting behavior is traced to the structure of valence band Landau levels, calculated numerically in the Luttinger model, beyond axial approximation. This points to the coexistence (in the same well) of mobile X and X+ with localized and interface-pressed AX(-) states. (c) 2014 AIP Publishing LLC.