Abstract:As a potential candidate for inorganic FETs in various applications, organic FETs have received much attention during recent years. In order to remove surface contamination and to improve the device performance, surface treatment is generally adopted before deposition of organic films. However, the microstructure of the organic films is very sensitive to growth conditions. Surface treatment and heating can influence the film morphology and the device performance greatly. In order to study the effect of surface treatment on the growth of pentacene film, we deposited and contrasted pentacene films at room temperature and elevated temperature on SiO2 substrate treated by several typical cleaning procedures. The results indicated that surface treatment could influence the film morphology greatly even for a thickness far beyond the first monolayer. We also found that there was a low critical temperature of about 55 °C at a deposition rate of 0.5 nm/min, above which substantial desorption of pentacene molecule occurred regardless of the cleaning procedure. Deposition on heated substrates is widely reported for increased grain size and improved device performance, while the possible desorption seems to be seldom noticed. Therefore, an implication of the low desorption temperature is that the film thickness may be frequently overestimated for deposition on heated substrates. Consequently, errors for any data that are dependent on film thickness may be caused without taking into account the possible desorption.

Molecular orientation and film morphology of pentacene on native silicon oxide surface.

Molecular orientation of the pentacene ultrathin films grown on SiO 2 substrates

Electronic Structure and Molecular Orientation of Pentacene Thin Films on Ferromagnetic La0.7sr0.3mno3

Effect of Molecule-Substrate Interaction on Thin-Film Structures and Molecular Orientation of Pentacene on Silver and Gold

Molecular Orientation Transformation of Pentacene on Amorphous Sio2: A Computational Study on the Initial Growth Stage of Physical Vapor Deposition

Molecular Dynamics Simulation of Molecular Orientation Transformation of Pentacene on A-Sio<inf>2</inf>

Structure Versus Electron Effects in the Growth Mode of Pentacene on Metal-Induced Si(111)-3×3 Surfaces

In-Situ Measurement of Molecular Orientation of the Pentacene Ultrathin Films Grown on Sio2 Substrates

Atomistic insights into dynamic growth of pentacene thin films on metal surfaces functionalized with self-assembled monolayers

Morphology and Current-Voltage Characteristics of Nanostructured Pentacene Thin Films Probed by Atomic Force Microscopy

Interfacial Chemistry of Pentacene on Clean and Chemically Modified Silicon (001) Surfaces

Biaxial growth of pentacene on rippled silica surfaces studied by rotating grazing incidence X-ray diffraction

Formation of intra-island grain boundaries in pentacene monolayers.

Epitaxial Growth of Ultrathin Two-Dimensional Pentacene Film with Standing-Up Molecular Geometry on Nano-Size-curved Graphene Surface

Study on External Electric Field-Induced Structural Changes in the Initial Growth of Pentacene on Amorphous SiO2

Fractal-Mound Growth of Pentacene Thin Films

Structural Evolution of Pentacene on a Ag(110) Surface

Temperature-Dependent Orientation Study of the Initial Growth of Pentacene on Amorphous Sio2 by Molecular Dynamics Simulations

Conducting AFM and 2D GIXD studies on pentacene thin films

Analysis of Pentacene Thin Films Using Atomic Force Microscopy (AFM) and X-ray Diffraction(xrd)

Pentacene Films Grown on Surface Treated Sio2 Substrates