Highly Sensitive, Photon Number Resolving Detectors Mediated by Phonons Using Delta-Doped Gaas Transistors

Xiulai Xu,Hugh Baker,David A. Williams

DOI: https://doi.org/10.1021/nl904296p

IF: 10.8

2010-01-01

Nano Letters

Abstract:We report a photon number-resolving detector using two-dimensional electron gas (2DEG)-based transistors. When the photon pulses impinge on the absorption region, the generated phonons dissipate ballistically in the 2 DEG toward the trench isolated nanowire transistors near the surface. The phonon electron interaction induces a positive conductance in the transistors, resulting in a current increase. With this principle, we obtain an internal quantum efficiency for this type of detector of up to 85%.