Oscillatory Tunneling Magnetoresistance in Fe3o4/N-Gaas/Fe3o4 Junction

Z. C. Huang,J. J. Yue,J. Wang,Y. Zhai,Y. B. Xu,B. P. Wang

DOI: https://doi.org/10.1109/tmag.2015.2435038

IF: 1.848

2015-01-01

IEEE Transactions on Magnetics

Abstract:Oscillatory tunneling magnetoresistance (TMR) as a function of the length of the n-GaAs channel is investigated theoretically for an Fe3O4/n-GaAs/Fe3O4 junction with a Schottky barrier between half metallic Fe3O4 and the n-GaAs semiconductor. In the n-GaAs channel, a tunneling current with ballistic and diffusive components is taken into account. The ballistic component results in oscillations of the MR with a single period, while the diffusive one leads to their decay with the thickness of the GaAs channel. Compared with the conventional FM/I/NM/I/FM double tunneling junctions where FM is a ferromagnet, NM, a normal metal, and I, an insulating barrier, the TMR is much larger and the spin-dependent current transmits farther.