Abstract:Background: The insatiable need for low-power and high-performance integrated circuit (IC) results in the development of alternative options for metal oxide semiconductor field effect transistor (MOSFET) in the ultra-nanoscale regime. The practical challenge of the device scaling limits the use of MOSFET for future technology nodes. ICs are equipped with billions of transistors whose size must be scaled while increasing performance. As the size of the transistor shrinks for the new technology node, the control of the gate over the channel also reduces, leading to sub-threshold leakage. The non-planar technology is the potential methodology to design the ICs for the future technology nodes. The fin-shaped field effect transistor (FinFET) is the most valuable non-planar technology. High sub-threshold slope, better short channel effect (SCE) control, high current drive strength, low dopant-prompted variations, and decreased power dissipation are the prominent features of FinFET technology. Objective: FinFET is an advanced version of MOSFET in terms of geometrical structure. Therefore, in this review paper, the different geometrical structures, working operations, design challenges, future aspects, and the different configurations of FinFETs are presented. The performance of the different configurations of a 1-bit full adder is evaluated and compared. Methods: An overview of FinFET evolution from the planar MOSFET, along with its architecture supported by the requisite equations, is presented in the paper. Besides this, it also gives an insight into the circuit simulation using the FinFETs for the process voltage temperature (PVT) variations, width quantization, design challenges, and the future of FinFETs. A comparative study of FinFET-based 1-bit full adder using various techniques is done to compute and compare the leakage power, delay, and power delay product (PDP). Results: The full adders using FinFETs show less leakage power and PDP. The AND-OR logicbased hybrid full adder using FinFETs shows the least energy consumption per switching. Fin- FET-based gate diffusion input adder shows a 74 % reduction in dynamic power compared to the full adder using MOSFET technology. The low power FinFET-based full adder shows a 54.16 % reduction in leakage power compared to the MOSFET-based full adder. The results signify the effect of multi-gates in curbing the leakage power dissipation. Conclusion: MOSFET faces the practical challenge of device scaling and SCEs at lower technology nodes. It initiates the multi-gate technology for future system generation. FinFET has the capability to design low-power and high-performance circuits in an ultra-nanoscale regime. The geometrical structure of FinFET plays a key role to improve the performance metrics in an ultrananoscale regime.

A comparison of high-frequency 32-bit dynamic adders with conventional silicon and novel carbon nanotube transistor technologies

Low-power and Compact NP Dynamic CMOS Adder with 16nm Carbon Nanotube Transistors

Carbon Nanotubes Blowing New Life into NP Dynamic CMOS Circuits

NP dynamic CMOS resurrection with carbon nanotube field effect transistors

Hybrid CMOS-CNFET based NP dynamic Carry Look Ahead Adder

Aligned carbon nanotube integrated circuit downsizing toward a sub-10 nm node

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Designing high-speed, low-power full adder cells based on carbon nanotube technology

Energy efficient hybrid full adder design for digital signal processing in nanoelectronics

Energy-Efficient Design and CNFET Implementation of GDI-Based Ternary Prefix Adders

CNTFET Based 4-Trit Hybrid Ternary Adder-Subtractor for low Power & High-Speed Applications

Energy Efficient Full Adder Cell Design With Using Carbon Nanotube Field Effect Transistors In 32 Nanometer Technology

Review of the Nanoscale FinFET Device for the Applications in Nano-regime

CMOS-based carbon nanotube pass-transistor logic integrated circuits

A 16-nm FinFET 28.8-mW 800-MHz 8-Bit All-N-Transistor Logic Carry Look-Ahead Adder

Optimization of a Nanoscale Operational Amplifier Based on a Complementary Carbon Nanotube Field-Effect Transistor by Adjusting Physical Parameters

An efficient design methodology for a tri-state multiplier circuit in carbon nanotube technology

High Speed Multiple Valued Logic Full Adder Using Carbon Nano Tube Field Effect Transistor

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

CNTFET based comparators: design, simulation and comparative analysis

Impact of Variability on Novel Transistor Configurations in Adder Circuits at 7[math]nm FinFET Technology