Abstract:This article presents a 140-GHz 2-D scalable wafer-scale transmit-receive (TRX) phased array based on radio frequency (RF) beamforming with 4-bit for both phase and gain controls. The chip is composed of $8\times8$ RF channels each having transmit and receive circuits, in addition to a TRX single-pole double-throw (SPDT) switch. One of the elements is replaced with an up/down-converter (UDC) channel composed of mixers, a $\times$ 6 LO multiplier chain, and intermediate frequency (IF) amplifiers at 9–14 GHz. The on-chip UDC channel is the interface between the IF signals on a printed circuit board (PCB) and the TX/RX RF distribution networks (DNs) on a chip. The 140-GHz DN is composed of coplanar waveguide (CPW) lines, Wilkinson dividers/combiners, and line amplifiers (LAs) to provide signal amplification. The chip occupies an area of 9.84 $\times$ 8.27 $\text{mm}^2$ and is designed and fabricated in GlobalFoundries, Malta, NY, USA, CMOS 45RFSOI technology. The chip is flipped on a low-cost organic RF PCB containing $8\times8$ patch antenna array placed at 1. $07\times1$ .22 $\text{mm}^2$ grid (0.5 $\lambda$ $\times$ 0.57 $\lambda$ at 140 GHz). The array electronically scans up to $\pm$ 60 $^{\circ}$ in the $H$ -plane and $\pm$ 38 $^{\circ}$ in the $E$ -plane for both TX and RX operations. Over-the-air (OTA) measured performance of the array demonstrates TX peak effective isotropic radiated power (EIRP) of 34-37.5 dBm at 137.5-145 GHz and RX input 1-dB compression point (P1dB) of $-$ 12 to $-$ 9 dBm at 134–143 GHz. Communication link measured for both TX and RX operations supports modulated 16-/64-quadrature amplitude modulation (QAM) signals with up to 24 Gb/s data rates with an rms EVM less than 7%/6%. In addition, a TRX phased array wireless links at 1.45 m and 5.2 meters are demonstrated with data rates up to 20 and 16 Gb/s using 16-QAM modulated signal and an rms EVM less than 9% for the 1.45 m link. To the best of the authors’ knowledge, this article presents the highest reported EIRP of 37.5 dBm for wafer-scale arrays in silicon technologies.

A 65nm CMOS 140 GHz 27.3 Dbm EIRP Transmit Array with Membrane Antenna for Highly Scalable Multi-Chip Phase Arrays

A Four-Element 7.5–9-Ghz Phased-Array Receiver with 1–8 Simultaneously Reconfigurable Beams in 65-Nm CMOS

A 4-Element 7.5-9 GHz Phased Array Receiver with 8 Simultaneously Reconfigurable Beams in 65 Nm CMOS Technology

A C-Band Compact High-Linearity Multibeam Phased-Array Receiver With Merged Gain-Programmable Phase Shifter Technique

A 56 – 65 GHz Highly-Integrated FMCW Radar Transceiver with 7.8 Db NF and 8 GHz Chirp-Bandwidth in 65-Nm CMOS

A C-Band Four-Channel Receiver with Current-Sharing and Large-Signal Multigated-Transistor Techniques in 65-Nm CMOS

Robustness‐oriented P‐band Phased Array Radar Front‐end with High Phase and Gain Resolution in 0.18 BiCMOS

A 90-98-ghz FMCW Radar Transceiver Supporting Broadband Modulation in 65nm CMOS

A Fully Integrated 27.5-30.5 GHz 8-Element Phased-Array Transmit Front-end Module in 65 nm CMOS

Development, Implementation, and Characterization of a 64-Element Dual-Polarized Phased-Array Antenna Module for 28-GHz High-Speed Data Communications

140-GHz 2-D Scalable On-Grid 8$\times$8-Element Transmit–Receive Phased Arrays With Up/Down Converters Demonstrating a 5.2-m Link at 16 Gbps

A Packaged 90-to-96GHz 16-Element Phased Array with 18.8/15.8dBm Psat/OP1dB, 14.8% TX PAE in 65nm CMOS Process and +51dBm Array EIRP

A Fully Integrated X-Band Phased-Array Transceiver in 0.13-Μm CMOS Technology

A Scalable 256-Elements E-Band Phased-Array Transceiver for Broadband Communication

A 24–30-GHz 256-Element Dual-Polarized 5G Phased Array Using Fast On-Chip Beam Calculators and Magnetoelectric Dipole Antennas

A 5.5-6.5Ghz Multi-Function Receiver with 6bit Phase Shifter and 31.5db Gain Control for Phased Array in 180nm CMOS

A Scalable 32–38-GHz Transmitter and Receiver Phased Array With High Radiation Efficiency in UV-LIGA-Based Ceramic Packaging

60-GHz 64- and 256-Element Dual-Polarized Dual-Beam Wafer-Scale Phased-Array Transceivers With Reticle-to-Reticle Stitching

C-band 180-Nm CMOS Transmitter Front-End with a Three-Stage Power Amplifier for Phased Array Applications

A 27-to-31.6 GHz 8-Element Phased-Array Transmitter Front-End with Inter-Element-Interference Cancellation Scheme in 65 Nm CMOS