Waveguide germanium photodetector with high bandwidth and high L-band responsivity

tsungyang liow,andy eujin lim,ning duan,mingbin yu,guoqiang lo

DOI: https://doi.org/10.1364/OFC.2013.OM3K.2

2013-01-01

Abstract:We present a waveguide germanium p-i-n photodetector for C and L-band operation. A record-high responsivity of 1.30 A/W for a germanium p-i-n photodetector is achieved at 1611.5 nm, while maintaining a high 27 GHz bandwidth.

What problem does this paper attempt to address?

PIC-integrable high-responsivity germanium waveguide photodetector in the C plus L band

XinYu Li,YuFei Liu,Ruogu Song,Chuan Li,ShuXiao Wang,WenCheng Yue,Zhijuan Tu,Xu Chen,Yan Cai,Wei Wang,MingBin Yu

DOI: https://doi.org/10.1364/OE.477776

IF: 3.8

2023-01-01

Optics Express

Abstract:We report the demonstration of a germanium waveguide p-i-n photodetector (PD) for the C + L band light detection. Tensile strain is transferred into the germanium layer using a SiN stressor on top surface of the germanium. The simulation and experimental results show that the trenches must be formed around the device, so that the strain can be transferred effectively. The device exhibits an almost flat responsivity with respect to the wavelength range from 1510 nm to 1630 nm, and high responsivity of over 1.1 A/W is achieved at 1625 nm. The frequency response measurement reveals that a high 3 dB bandwidth (f(3dB)) of over 50 GHz can be obtained. The realization of the photonic-integrated circuits (PIC)-integrable waveguide Ge PDs paves the way for future telecom applications in the C + L band.
PIC-integrable high-responsivity germanium waveguide photodetector in the C + L band.

XinYu Li,YuFei Liu,Ruogu Song,Chuan Li,ShuXiao Wang,WenCheng Yue,Zhijuan Tu,Xu Chen,Yan Cai,Wei Wang,MingBin Yu

DOI: https://doi.org/10.1364/OE.477776

IF: 3.8

2023-01-01

Optics Express

Abstract:We report the demonstration of a germanium waveguide p-i-n photodetector (PD) for the C + L band light detection. Tensile strain is transferred into the germanium layer using a SiN stressor on top surface of the germanium. The simulation and experimental results show that the trenches must be formed around the device, so that the strain can be transferred effectively. The device exhibits an almost flat responsivity with respect to the wavelength range from 1510 nm to 1630 nm, and high responsivity of over 1.1 A/W is achieved at 1625 nm. The frequency response measurement reveals that a high 3 dB bandwidth (f3dB) of over 50 GHz can be obtained. The realization of the photonic-integrated circuits (PIC)-integrable waveguide Ge PDs paves the way for future telecom applications in the C + L band.
Germanium Photodiodes With 3-dB Bandwidths >110 GHz and L-Band Responsivity of >0.7 A/W

Daniel Steckler,Stefan Lischke,Aleksandra Kroh,Anna Peczek,Galina Georgieva,Lars Zimmermann

DOI: https://doi.org/10.1109/lpt.2024.3398359

IF: 2.6

2024-05-21

IEEE Photonics Technology Letters

Abstract:We present germanium p-i-n photodiodes with opto-electrical 3-dB bandwidths >110 GHz while exhibiting high internal responsivity >0.7 AW1 at 1620 nm wavelength. Compared to our previous work, this is an improvement of >35 % in internal responsivity without sacrificing the photo detectors bandwidths. This was achieved by the introduction of a local reduction of the silicon waveguide thickness right below the germanium body, which improves optical coupling (from the silicon waveguide into the germanium region) and confinement. In this work we study three photodiode device variants in which germanium is laterally sandwiched between complementary in-situ doped Si regions. This approach enables the side-by side realization of germanium p-i-n photodiodes with different widths, featuring different combinations of OE bandwidths and responsivities. We further investigate on the optical-power handling capabilities of these photodiodes by means of responsivity and bandwidth.

engineering, electrical & electronic,optics,physics, applied
Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

Yiding Lin,Danhao Ma,Kwang Hong Lee,Jin Zhou,Xin Guo,Hong Wang,Chuan Seng Tan,Jurgen Michel

DOI: https://doi.org/10.1109/group4.2018.8478713

2018-01-01

Abstract:A germanium (Ge) MSM photodetector is demonstrated with significantly-enhanced photo-response at the L-band and beyond, using SiNx stressor at the waveguide sidewalls created by a self-aligned dry etching method. This provides a CMOS-compatible solution for Ge detectors for broadband high-speed integrated photonic applications.
High-responsivity on-chip waveguide coupled germanium photodetector for 2 g m waveband

Wang Jianing,Wang Xi,Li Yihang,Yang Yanfu,Song Qinghai,Xu Ke

DOI: https://doi.org/10.1364/PRJ.508024

IF: 7.6

2024-01-01

Photonics Research

Abstract:Recently, the emerging 2 mu m waveband has gained increasing interest due to its great potential for a wide scope of applications. Compared with the existing optical communication windows at shorter wavelengths, it also offers distinct advantages of lower nonlinear absorption, better fabrication tolerance, and larger free carrier plasma effects for silicon photonics, which has been a proven device technology. While much progress has been witnessed for silicon photonics at the 2 mu m waveband, the primary challenge still exists for on-chip detectors. Despite the maturity and compatibility of the waveguide coupled photodetectors made of germanium, the 2 mu m regime is far beyond its cutoff wavelength. In this work, we demonstrate an efficient and high -speed on-chip waveguidecoupled germanium photodetector operating at the 2 mu m waveband. The weak sub -bandgap absorption of epitaxial germanium is greatly enhanced by a lateral separation absorption charge multiplication structure. The detector is fabricated by the standard process offered by a commercial foundry. The device has a benchmark performance with responsivity of 1.05 A/W and 3 dB bandwidth of 7.12 GHz, which is able to receive high -speed signals with up to 20 Gbit/s data rate. The availability of such an efficient and fast on-chip detector circumvents the barriers between silicon photonic integrated circuits and the potential applications at the 2 mu m waveband. (c) 2023 Chinese Laser Press
High-responsivity On-Chip Waveguide Coupled Germanium Photodetector for 2 Μm Waveband

Jianing Wang,Xi Wang,Yihang Li,Yanfu Yang,Qinghai Song,Ke Xu

DOI: https://doi.org/10.1364/prj.508024

IF: 7.6

2024-01-01

Photonics Research

Abstract:Recently, the emerging 2 μm waveband has gained increasing interest due to its great potential for a wide scope of applications. Compared with the existing optical communication windows at shorter wavelengths, it also offers distinct advantages of lower nonlinear absorption, better fabrication tolerance, and larger free carrier plasma effects for silicon photonics, which has been a proven device technology. While much progress has been witnessed for silicon photonics at the 2 μm waveband, the primary challenge still exists for on-chip detectors. Despite the maturity and compatibility of the waveguide coupled photodetectors made of germanium, the 2 μm regime is far beyond its cutoff wavelength. In this work, we demonstrate an efficient and high-speed on-chip waveguide-coupled germanium photodetector operating at the 2 μm waveband. The weak sub-bandgap absorption of epitaxial germanium is greatly enhanced by a lateral separation absorption charge multiplication structure. The detector is fabricated by the standard process offered by a commercial foundry. The device has a benchmark performance with responsivity of 1.05 A/W and 3 dB bandwidth of 7.12 GHz, which is able to receive high-speed signals with up to 20 Gbit/s data rate. The availability of such an efficient and fast on-chip detector circumvents the barriers between silicon photonic integrated circuits and the potential applications at the 2 μm waveband.
High-Power Ge/Si Waveguide Photodetector

Hengzhen Cao,Yuluan Xiang,Weichao Sun,Jin Xie,Jingshu Guo,Zejie Yu,Liu,Yaocheng Shi,Daoxin Dai

DOI: https://doi.org/10.1021/acsphotonics.4c00173

IF: 7

2024-01-01

ACS Photonics

Abstract:A lateral germanium/silicon waveguide photodetector with a side-coupling structure is proposed and realized. For the present photodetector, the input light is split into four channels, which are gradually coupled into two parallel germanium waveguides by adiabatic side-coupling. In this way, uniform optical field distribution is achieved and the space-charge effect is eliminated greatly even with high optical power. The experimental results show that the responsivity is still as high as 0.68 A/W even for an input optical power of 28 mW and the saturation photocurrent is more than 19.5 mA. The present photodetector features a broad bandwidth of >40 GHz for detecting low optical power, while the bandwidth is still more than 20 GHz for the input optical power of 12.4 mW (the output current is 10.2 mA). The open eye-diagrams for receiving the 25 and 50 Gbps data are demonstrated with the photocurrents of 16 and 8.5 mA, respectively. The present side-coupling Ge/Si photodetector exhibits excellent performances for high-power detection compared with the conventional one.
Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

Hao Zhou,Qimiao Chen,Shaoteng Wu,Lin Zhang,Xin Guo,Bongkwon Son,Chuan Seng Tan

DOI: https://doi.org/10.1364/oe.449326

IF: 3.8

2022-01-01

Optics Express

Abstract:Germanium (Ge) lateral p-i-n photodetectors with grating and hole-array structures were fabricated on a Ge-on-insulator (GOI) platform. Owing to the low threading dislocation density (TDD) in the transferred Ge layer, a low dark current of 0.279 µA was achieved at -1 V. The grating structure enhances the optical absorption by guiding the lateral propagation of normal incident light, contributing to a 3× improved responsivity at 1,550 nm. Compared with the grating structure, the hole-array structure not only guides the lateral modes but also benefits the vertical resonance modes. A 4.5× higher responsivity of 0.188 A/W at 1,550 nm was achieved on the 260 nm Ge absorptive layer. In addition, both the grating and the hole-array structure attribute to a 2× and a 1.6× enhanced 3dB bandwidth at -5 V due to significantly reduced capacitance. The planar configuration of p-i-n photodiodes is favorable for large-scale monolithic integration. The incorporated surface structures offer promising approaches to reinforce the responsivity and bandwidth simultaneously, paving the way for the development of high-performance Ge photodetectors on silicon substrate.
Germanium Photodetectors with 60-Nm Absorption Coverage Extension and ∼2× Quantum Efficiency Enhancement Across L-Band

Yiding Lin,Danhao Ma,Rui-Tao Wen,Kwang Hong Lee,Xin Guo,Jin Zhou,Hong Wang,Chuan Seng Tan,Jurgen Michel

DOI: https://doi.org/10.1109/group4.2019.8925937

2019-01-01

Abstract:Germanium-on-insulator (GOI) metal-semiconductor-metal (MSM) photodetectors were demonstrated with a 60 nm extension on the absorption coverage and a ∼2× enhancement on the quantum efficiency across the L-band.
Ge0.9sn0.1 P-I-N Photodiode With Record-High Responsivity At Two-Micron-Wavelength

Shengqiang Xu,Yi-Chiau Huang,Wei Wang,Yuan Dong,Saeid Masudy-Panah,Xin Guo,Hong Wang,Xiao Gong,Yee-Chia Yeo

DOI: https://doi.org/10.1109/group4.2018.8478758

2018-01-01

Abstract:We demonstrate a Ge0.9Sn0.1 photodiode on Si substrate with record-high responsivity R-op of 0.17 A/W at wavelength lambda of 2 mu m. Fourier-transform infrared spectroscopy (FTIR) reveals that the detector has a cutoff wavelength lambda(c) at similar to 2.6 mu m.
High-Speed Compact Plasmonic-PdSe<sub>2</sub> Waveguide-Integrated Photodetector

Jialing Jian,Jianghong Wu,Chuyu Zhong,Hui Ma,Boshu Sun,Yuting Ye,Ye Luo,Maoliang Wei,Kunhao Lei,Ruizhe Liu,Zequn Chen,Guangyi Li,Hao Dai,Renjie Tang,Chunlei Sun,Junying Li,Wei Li,Ming Li,Hongtao Lin,Lan Li

DOI: https://doi.org/10.1021/acsphotonics.3c00453

IF: 7

2023-01-01

ACS Photonics

Abstract:Waveguide-integrated photodetectors are essential components in integrated photonic circuits since they facilitate light conversion into electrical signals. Nonetheless, optical absorption and carrier collection can significantly affect the device performance. As a solution to this issue, plasmonic slot waveguides confine optical energy within a subwavelength scale in a photoconductive detector, enhancing optical absorption and providing extremely short channels to collect carriers. Two-dimensional van der Waals layered palladium selenide (PdSe2) exhibits the merits of a narrow bandgap and high carrier mobility, thus positioning it as a favorable candidate material for photodetectors operating at the telecommunication band. In this study, we propose and experimentally verify a high-speed PdSe2-plasmonic waveguide-integrated photodetector with a dark current of 4.5 mu A and an intrinsic responsivity of 560.1 mA center dot W-1 at 3 V. Additionally, it has an internal quantum efficiency of 32.3%, and the measured 3 dB bandwidth is 17.5 GHz. This integrated photodetector fulfills the requirements of various critical applications in optical communication, microwave photonics, sensing, and imaging.
High-Bandwidth Zero-Biased Waveguide-Integrated p-n Homojunction Graphene Photodetectors on Silicon for a Wavelength Band of 1.55 m and Beyond

Laiwen Yu,Jingshu Guo,Hengtai Xiang,Chaoyue Liu,Yuanrong Li,Liu Liu,Daoxin Dai

DOI: https://doi.org/10.1021/acsphotonics.3c00688

IF: 7

2023-01-01

ACS Photonics

Abstract:The p-n homojunction graphene photodetectors (GPDs) based on the photothermoelectric (PTE) effect have drawn much attention for featuring zero-bias operation (i.e., zero dark current) with a bandwidth of tens of GHz. However, most waveguide-integrated GPDs were demonstrated for the 1.55 mu m wavelength band. Here, we realize high-performance silicon waveguide integrated GPDs enabling efficient light absorption at both wavelength bands of 1.55 and 2 mu m. The broadband operation of the present PTE GPDs is analyzed theoretically and experimentally. When operating at 1.55 mu m, the GPD typically exhibits a responsivity of similar to 2.81 V/W and a 3 dB bandwidth of >40 GHz (setup-limited) under zero bias. When the GPDs operate at 2 mu m under zero bias, the responsivity is about 2.78-4 V/W and the 3 dB bandwidth is >22 GHz (setup-limited). The measured linear dynamic range is over 24 dB for both wavelength bands of 1.55 and 2 mu m. The present high-performance waveguide-integrated GPD provides a promising option for the applications of silicon photonics beyond 1.55 mu m, such as optical communications, photonics sending, etc.
A Compact Evanescently-Coupled Germanium Pin Waveguide Photodetector

Zhijuan Tu,Kaibo Liu,Huaxiang Yi,Runxi Zhou,Xingjun Wang,Zhiping Zhou,Zhangyuan Chen

DOI: https://doi.org/10.1117/12.2001221

2012-01-01

Abstract:A compact 1.6x10 mu m(2) germanium pin waveguide photodetector was demonstrated on a Silicon-on-Insulator substrate. The dark current of the photodetector was measured to be 0.66 mu A at -1V bias voltage, which is much lower than recently reported. The photodetector exhibited a 3-dB bandwidth of 20GHz at the wavelength of 1.55 mu m. A clear open eye diagram at 10Gb/s was also obtained.
Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

Jianghong Wu,Hui Ma,Chuyu Zhong,Maoliang Wei,Chunlei Sun,Yuting Ye,Yan Xu,Bo Tang,Ye Luo,Boshu Sun,Jialing Jian,Hao Dai,Hongtao Lin,Lan Li

DOI: https://doi.org/10.21203/rs.3.rs-1399761/v1

2022-01-01

Abstract:Abstract Hybrid integration of two-dimensional (2D) materials on a silicon photonic platform enables diverse exploration of novel active functions and significant improvement in device performance for next-generation silicon integrated photonic circuits. 2D transition metal dichalcogenide materials (TMDCs) have attracted extensive attention for photodetectors, but developing high-performance waveguide-integrated photodetectors based on conventionally investigated 2D TMDCs at the telecom C-band is still a big challenge because of their large optical bandgap and slow carrier mobility. Here, we propose PdSe2, a new type of 2D TMDC, to be integrated with silicon photonic components for on-chip photodetection with high responsivity and speed in the datacom and telecom optical bands ranging from the O-band to the C-band. The obtained waveguide-integrated photodetectors show a high responsivity of 1190.2 mA W−1 at 1550 nm and a low noise-equivalent power of 4.0 pW Hz-0.5 at 5V. The 3 dB bandwidth reaches up to 1.5 GHz, and the measured data rate is 2.5 Gbit s−1. The achieved PdSe2 photodetectors provide new insights to explore the integration of novel 2D TMDCs with silicon photonics and demonstrate the potential of integrated photodetectors for applications in diverse areas, including optical communications, on-chip spectroscopy, and sensing.
High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Jianghong Wu,Maoliang Wei,Jianglong Mu,Hui Ma,Chuyu Zhong,Yuting Ye,Chunlei Sun,Bo Tang,Lichun Wang,Junying Li,Xiaomin Xu,Bilu Liu,Lan Li,Hongtao Lin

DOI: https://doi.org/10.1021/acsnano.1c04359

IF: 17.1

2021-01-01

ACS Nano

Abstract:Due to the excellent electrical and optical properties and their integration capability without lattice matching requirements, low-dimensional materials have received increasing attention in silicon photonic circuits. Bi2O2Se with high carrier mobility, narrow bandgap, and good air stability is very promising for high-performance near-infrared photodetectors. Here, the chemical vapor deposition method is applied to grow Bi2O2Se onto mica, and our developed polycarbonate/polydimethylsiloxane-assisted transfer method enables the clean and intact transfer of Bi2O2Se on top of a silicon waveguide. We demonstrated the Bi2O2Se/Si waveguide integrated photodetector with a small dark current of 72.9 nA, high responsivity of 3.5 A·W-1, fast rise/decay times of 22/78 ns, and low noise-equivalent power of 15.1 pW·Hz-0.5 at an applied voltage of 2 V in the O-band for transverse electric modes. Additionally, a microring resonator is designed for enhancing light-matter interaction, resulting in a wavelength-sensitive photodetector with reduced dark current (15.3 nA at 2 V) and more than a 3-fold enhancement in responsivity at the resonance wavelength, which is suitable for spectrally resolved applications. These results promote the integration of Bi2O2Se with a silicon photonic platform and are expected to accelerate the future use of integrated photodetectors in spectroscopy, sensing, and communication applications.
Waveguide-Integrated PdSe2 Photodetector over a Broad Infrared Wavelength Range

Jianghong Wu,Hui Ma,Chuyu Zhong,Maoliang Wei,Chunlei Sun,Yuting Ye,Yan Xu,Bo Tang,Ye Luo,Boshu Sun,Jialing Jian,Hao Dai,Hongtao Lin,Lan Li

DOI: https://doi.org/10.1021/acs.nanolett.2c02099

IF: 10.8

2022-01-01

Nano Letters

Abstract:Hybrid integration of van der Waals materials on a photonic platform enables diverse exploration of novel active functions and significant improvement in device performance for next-generation integrated photonic circuits, but developing waveguide-integrated photodetectors based on conventionally investigated transition metal dichalcogenide materials at the full optical telecommunication bands and mid-infrared range is still a challenge. Here, we integrate PdSe2 with silicon waveguide for on-chip photodetection with a high responsivity from 1260 to 1565 nm, a low noise-equivalent power of 4.0 pWmiddotHz(-0.5), a 3-dB bandwidth of 1.5 GHz, and a measured data rate of 2.5 Gbitmiddots(-1). The achieved PdSe2 photodetectors provide new insights to explore the integration of novel van der Waals materials with integrated photonic platforms and exhibit great potential for diverse applications over a broad infrared range of wavelengths, such as on-chip sensing and spectroscopy.
High-efficiency Normal-Incidence Vertical P-I-n Photodetectors on a Germanium-on-insulator Platform

Yiding Lin,Kwang Hong Lee,Shuyu Bao,Xin Guo,Hong Wang,Jurgen Michel,Chuan Seng Tan

DOI: https://doi.org/10.1364/prj.5.000702

IF: 7.6

2017-01-01

Photonics Research

Abstract:In this paper, normal incidence vertical p-i-n photodetectors on a germanium-on-insulator (GOI) platform were demonstrated. The vertical p-i-n structure was realized by ion-implanting boron and arsenic at the bottom and top of the Ge layer, respectively, during the GOI fabrication. Abrupt doping profiles were verified in the transferred high-quality Ge layer. The photodetectors exhibit a dark current density of similar to 47 mA/cm(2) at -1 V and an optical responsivity of 0.39 A/W at 1550 nm, which are improved compared with state-of-the-art demonstrated GOI photodetectors. An internal quantum efficiency of similar to 97% indicates excellent carrier collection efficiency of the device. The photodetectors with mesa diameter of 60 alpha m exhibit a 3 dB bandwidth of similar to 1 GHz, which agrees well with theoretical calculations. The bandwidth is expected to improve to similar to 32 GHz with mesa diameter of 10 ae m. This work could be similarly extended to GOI platforms with other intermediate layers and potentially enrich the functional diversity of GOI for near-infrared sensing and communication integrated with Ge CMOS and mid-infrared photonics. (C) 2017 Chinese Laser Press
High-performance Ge-on-insulator lateral p-i-n waveguide photodetectors for electronic–photonic integrated circuits at telecommunication wavelengths

TZU-YANG HUANG,RADHIKA BANSAL,Soumava Ghosh,Kwang Hong Lee,Qimiao Chen,Chuan Seng Tan,Guo-En Chang,Tzu-Yang Huang,Radhika Bansal

DOI: https://doi.org/10.1364/ol.517863

IF: 3.6

2024-02-28

Optics Letters

Abstract:Tzu-Yang Huang, Radhika Bansal, Soumava Ghosh, Kwang Hong Lee, Qimiao Chen, Chuan Seng Tan, Guo-En Chang We report high-performance germanium-on-insulator (GeOI) waveguide photodetectors (WGPDs) for electronic–photonic integrated ... [Opt. Lett. 49, 1281-1284 (2024)]

optics
High-speed Ge-on-GaAs Photodetector

Linze Li,Rui Pan,Zhiyang Xie,Yao Lu,Jiaxiang Chen,Xinbo Zou,Ziyuan Yuan,Menglin Chang,Hong Lu,Baile Chen

DOI: https://doi.org/10.1364/oe.459664

IF: 3.8

2022-01-01

Optics Express

Abstract:In this work, a germanium (Ge) on gallium arsenide (GaAs) photodetector is demonstrated with the optical response from 850 nm to 1600 nm, which has potential for monolithic integration with VCSELs on GaAs platform as transceiver working beyond 900 nm. The device exhibits a responsivity of 0.35A/W, 0.39 A/W and 0.11 A/W at 1000 nm, 1310 urn and 1550 nm, respectively and dark current of 8 nA at -1 V. The 10 um diameter back-illuminated device achieves a 3-dB bandwidth of 9.3 GHz under -2 V bias. A donor-like trap at the interface between the Ge and GaAs collection layers is verified by capacitance-voltage curve and deep-level transient spectroscopy (DLTS) measurement, which impedes the depletion in GaAs collection layers. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
Hybrid Integrated Velocity Matched Travelling-Wave InP/InGaAs Photodetectors with Silicon Nitride Waveguides

Pengfei Xu,Yujie Chen,Zengkai Shao,Yanfeng Zhang,Tianyou Zhang,Zeru Wu,Chunchuan Yang,Lin Liu,Lidan Zhou,Hui Chen,Jie Liu,Siyuan Yu

DOI: https://doi.org/10.1364/acpc.2016.af3f.4

2016-01-01

Abstract:Broad-bandwidth high-responsivity waveguide integrated photodetectors are key optoelectronic devices for on-chip photoelectric conversion and radio frequency (RF) signal demodulations. Here, a hybrid integrated InP/InGaAs travelling-wave photodetector based on slotline transmission line with velocity-matched bent silicon nitride (SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> ) optical waveguide is studied. Besides, the fabrication of the hybrid integrated TWPD device is demonstrated.

Waveguide germanium photodetector with high bandwidth and high L-band responsivity

PIC-integrable high-responsivity germanium waveguide photodetector in the C plus L band

PIC-integrable high-responsivity germanium waveguide photodetector in the C + L band.

Germanium Photodiodes With 3-dB Bandwidths >110 GHz and L-Band Responsivity of >0.7 A/W

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

High-responsivity on-chip waveguide coupled germanium photodetector for 2 g m waveband

High-responsivity On-Chip Waveguide Coupled Germanium Photodetector for 2 Μm Waveband

High-Power Ge/Si Waveguide Photodetector

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

Germanium Photodetectors with 60-Nm Absorption Coverage Extension and ∼2× Quantum Efficiency Enhancement Across L-Band

Ge0.9sn0.1 P-I-N Photodiode With Record-High Responsivity At Two-Micron-Wavelength

High-Speed Compact Plasmonic-PdSe<sub>2</sub> Waveguide-Integrated Photodetector

High-Bandwidth Zero-Biased Waveguide-Integrated p-n Homojunction Graphene Photodetectors on Silicon for a Wavelength Band of 1.55 m and Beyond

A Compact Evanescently-Coupled Germanium Pin Waveguide Photodetector

Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Waveguide-Integrated PdSe2 Photodetector over a Broad Infrared Wavelength Range

High-efficiency Normal-Incidence Vertical P-I-n Photodetectors on a Germanium-on-insulator Platform

High-performance Ge-on-insulator lateral p-i-n waveguide photodetectors for electronic–photonic integrated circuits at telecommunication wavelengths

High-speed Ge-on-GaAs Photodetector

Hybrid Integrated Velocity Matched Travelling-Wave InP/InGaAs Photodetectors with Silicon Nitride Waveguides