Numerical Modeling of Magnetic-Field-sensitive Semiconductor Devices

L ANDOR,HP BALTES,A NATHAN,HG SCHMIDTWEINMAR
DOI: https://doi.org/10.1109/t-ed.1985.22105
1985-01-01
Abstract:Semiconductor devices in the presence of a magnetic field have been modeled numerically. The two-dimensional distributions of the electric potential, the electron concentration, and the hole concentration in a silicon slab exposed to a magnetic field have been computed. We have generalized the well-known Scharfetter-Gummel scheme to the case of two dimensions and nonzero magnetic field and employe...
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