Abstract:In this paper, an analytical model of insulated gate bipolar transistor (IGBT) on-state voltage ( ${V}_{\mathrm {{ {{ON}}}}}$ ) and turn-off loss ( ${E}_{\mathrm {{ {{OFF}}}}}$ ) is developed to find the optimum solution (minimum power loss) for a given application. With this model, it is found that IGBT on-state voltage is limited by the fact that holes can only flow from the anode to the cathode. The minimum on-state voltage for a Si IGBT with 110- $\mu \text{m}$ wide drift region is found out to be around 0.835 V at 100 A/cm2 and room temperature. For a given operating frequency and chip size, a tradeoff between on-state voltage and turn-off loss that gives minimum device power loss can be achieved by manipulating the carrier profile in the drift region with an optimum structure design. This minimum device loss decreases mildly with increasing chip size, i.e., a merely 45% loss reduction when the chip size increases from 0.2 to 5 cm2. These results clearly indicate that the performance of an IGBT is not area sensitive. They are encouraging for device manufacturers who wish to reduce the device chip size to lower cost. However, the constraint comes from the device thermal dissipation capabilities which decrease quickly with decreasing chip size. These results are validated with numerical 2-D device simulations for a large variety of device structures, chip size, and operating frequencies (2 to 200 kHz). State-of-the-art IGBT product performance is compared against the theoretical limit indicating there is still substantial room for improvement at low and high frequencies.

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An Experimental And Numerical Investigation Of Igbt Blocking Characteristics

Analysis of Double Trench Insulated Gate Bipolar Transistor

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Modeling and Stability Analysis for a Closed Loop Active IGBT Gate Drive

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Active Current Source IGBT Gate Drive with Closed-Loop Di/dt and Dv/dt Control

Analysis of the dV/dt effect on an IGBT gate circuit in IPM

Analysis Of Lifetime Control In High-Voltage Igbts

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A Gate Driver with a Negative Turn Off Bias Voltage for GaN HEMTs

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2-D Modelling and Optimisation of Trench Insulated Gate Bipolar Transistors (TIGBT)

On the Reliability of an InGaZnO Thin-Film Transistor under Negative Bias Illumination Stress

Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

Investigation of the Threshold Voltage Drift in Enhancement Mode Gan Mosfet under Negative Gate Bias Stress

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A Novel Junction Temperature Estimation Method Independent of Bond Wire Degradation for IGBT