High performance Graphene and ITO-based electro-optic modulators and switches

chenran ye,sarah k pickus,ke liu,chen huang,volker j sorger

2014-01-01

Abstract:High-Performance electro-optical devices based on the TCO ITO and Graphene are discussed and benchmarked. These devices allow breaking classical energy-speed and modulation efficiency-loss tradeoffs of EO devices.

What problem does this paper attempt to address?

High-performance Graphene-Integrated Thermo-Optic Switch: Design and Experimental Validation [Invited]

Junying Li,Yizhong Huang,Yi Song,Lan Li,Hanyu Zheng,Haozhe Wang,Tian Gu,Kathleen Richardson,Jing Kong,Juejun Hu,Hongtao Lin

DOI: https://doi.org/10.1364/ome.382856

2019-01-01

Optical Materials Express

Abstract:The extraordinary optical properties of single-layer graphene have spurred the development of a variety of photonic components. We have previously demonstrated a scalable and versatile platform to facilitate the integration of graphene and other 2-D materials with chalcogenide glass-based planar photonics. In this paper, we detail the design criteria and optimization guidelines towards high-performance graphene-integrated thermo-optic (TO) switches based on the chalcogenide glass-on-graphene platform. Notably, absorption loss of graphene can be reduced to < 20 dB/cm when it is sandwiched inside photonic structures capitalizing on the anisotropic absorption property of graphene. We quantify energy efficiency of the TO switch, showing that the choice of cladding materials plays a critical role in improving device efficiency. Furthermore, we report a record TO switching efficiency of 10 nm/mW via judicious engineering of the overlap between optical mode and thermal profile.
Ultrafast All-Optical Graphene Modulator.

Wei Li,Bigeng Chen,Chao Meng,Wei Fang,Yao Xiao,Xiyuan Li,Zhifang Hu,Yingxin Xu,Limin Tong,Hongqing Wang,Weitao Liu,Jiming Bao,Y. Ron Shen

DOI: https://doi.org/10.1021/nl404356t

IF: 10.8

2014-01-01

Nano Letters

Abstract:Graphene is an optical material of unusual characteristics because of its linearly dispersive conduction and valence bands and the strong interband transitions. It allows broadband light-matter interactions with ultrafast responses and can be readily pasted to surfaces of functional structures for photonic and optoelectronic applications. Recently, graphene-based optical modulators have been demonstrated with electrical tuning of the Fermi level of graphene. Their operation bandwidth, however, was limited to about 1 GHz by the response of the driving electrical circuit. Clearly, this can be improved by an all-optical approach. Here, we show that a graphene-clad microfiber all-optical modulator can achieve a modulation depth of 38% and a response time of ∼ 2.2 ps, limited only by the intrinsic carrier relaxation time of graphene. This modulator is compatible with current high-speed fiber-optic communication networks and may open the door to meet future demand of ultrafast optical signal processing.
Recent Developments in Graphene-Based Optical Modulators

Ran Hao,J. M. Jin,E. P. Li

DOI: https://doi.org/10.1007/s12200-014-0424-4

2014-01-01

Abstract:Graphene has shown promising perspectives in optical active components due to the large active-control of its permittivity-variation. This paper systematically reviews the recent developments of graphene-based optical modulators, including material property, single-layer , multi-layer , few-layer graphene-based modulators and corresponding figure-of-merits.The results showed graphene is an excellent material for enhancing silicons weak modulation capability after it is integrated into the silicon platform, showing significant influence on optical interconnects in future integrated optoelectronic circuits.
Characteristics of Electro-Refractive Modulating Based on Graphene-Oxide-Silicon Waveguide

Chao Xu,Yichang Jin,Longzhi Yang,Jianyi Yang,Xiaoqing Jiang

DOI: https://doi.org/10.1364/oe.20.022398

IF: 3.8

2012-01-01

Optics Express

Abstract:Graphene has attracted a high level of research interest because of its outstanding electronic transport properties and optical properties. Based on the Kubo formalism and the Maxwell equations, it's demonstrated that the optical conductivity of graphene can be controlled through the applied voltage. And we find that the graphene-oxide-silicon (GOS) based waveguide can be made into either the electro-absorptive or electron-refractive modulators. Using graphene as the active medium, we present a new electro-refractive Mach-Zender interferometer based on the GOS structure. This new GOS-based electron-refractive modulation mechanism can enable novel architectures for on-chip optical communications.
Graphene, Plasmonic and Silicon Optical Modulators

Volker J. Sorger,Ren-Min Ma,Chen Huang,Zhuoran Li,Ming Liu,Xiang Zhang

DOI: https://doi.org/10.1109/cleoe-iqec.2013.6801422

2013-01-01

Abstract:In this work we showcase two novel examples of electro-optic modulators (EOM) for ultrafast and low-power future transmitters. Unlike weak-interacting EOM design, which often require high feedback in form of high-Q cavity design we deploy novel materials and metal-based approaches. Both devices are based on novel materials, namely Graphene [1] and Indium-Tin-Oxide (ITO) [2], and feature the Silicon-on-Insulator (SOI) platform facilitating ease in monolithic integration (Fig 1).
High-speed Plasmonic ITO Modulators

Martin Thomaschewski,Yaliang Gui,Chandraman Patil,Hao Wang,Jiawei Meng,Hamed Dalir,Volker J. Sorger

DOI: https://doi.org/10.1364/cleo_fs.2023.fm4d.1

2023-01-01

Abstract:Electro-optic modulators are critical building blocks for many signal processing systems which adhere to requirements given by both electrical and optical constraints. We present recently developed nanophotonic electro-optic devices enabling the next generation of electro-optic modulators featuring a significantly improved device performance regarding modulation efficiency (VπL < 1 Vmm), device footprint (< 1 mm2) and bandwidth (> 100 GHz). These novel high-performance nanophotonic electro-optic modulators and switches are based on transparent conducting oxides (ITO) which provide the critical material properties for practical deployment in future electro-optic modulation applications.
Advancements in Plasmonic and Graphene-based High-Performance Modulators

Ren-Min Ma,Xiang Zhang

DOI: https://doi.org/10.1364/fio.2013.ftu2e.1

2013-01-01

SPIE Newsroom

Abstract:Electro-optic modulators are key parts of optical transmitters in optical communication [1]. With an on-going miniaturization of photonic circuits, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic modulator without sacrificing bandwidth and modulation strength [2]. While silicon-based electro-optic modulators have been demonstrated, they require large device footprints of the order of millimeters as a result of weak nonlinear electro-optical properties [3]. The modulation strength can be increased by deploying a high-Q resonator, however with the trade-off of significantly sacrificing bandwidth [4]. Furthermore, design challenges and temperature tuning limit the deployment of such resonance-based modulators. In this work we showcase two novel examples of electro-optic modulators for ultrafast and low-power future transmitters. Both devices are based on novel materials, namely Graphene and Indium-Tin-Oxide (ITO). Both devices are based on the Silicon-on-Insulator (SOI) platform facilitating ease in monolithic integration in photonic integrated circuits.
High Efficiency Graphene-Silicon Hybrid-Integrated Thermal and Electro-Optical Modulator

Xiaoxuan Wu,Zheng-Yi Cao,Tianxiang Zhao,Yun Wu,Zhonghui Li,Spyros Doukas,Elefterios Lidorikis,Yu Xue,Liu Liu,Omid Ghaebi,Giancarlo Soavi,Junpeng Lu,Zhenhua Ni,Junjia Wang

DOI: https://doi.org/10.1039/d4nh00160e

2024-06-15

Nanoscale Horizons

Abstract:Graphene modulators are considered as a protential solution to achieve hign efficiency light modulation, and the graphene-silicon hybrid-integrated modulators are particularly faverable due to the CMOS compatibility and low cost. The exploitation of Graphene modulator latent capabilities remains an ongoing endeavour to improve the modulation and energy efficiency. Here, high-efficiency graphene-silicon hybrid-integrated thermal and electro-optical modulators are realized using gold-assisted transfer. We fabricate and demonstrate a microscale thermo-optical modulator with a tuning efficiency of 0.037 nm/mW and a high heating performance of 67.4 K∙μm 3 ∙mW -1 on a small active area of 7.54 μm 2 and a graphene electro-absorption modulator featuring a high speed date rate reaching 48 Gb/s and a low power conspution of 200 fJ/bit. These devices show superior performances compared to state of the art in terms of efficiency, low process complexity, and compact device footage, which can support the realization of high-performance graphene-silicon hybrid-integrated photonic circuits with CMOS compatibility.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity

Yuanda Gao,Ren-Jye Shiue,Xuetao Gan,Luozhou Li,Cheng Peng,Inanc Meric,Lei Wang,Attila Szep,Dennis Walker Jr.,James Hone,Dirk Englund

DOI: https://doi.org/10.1021/nl504860z

2014-12-19

Abstract:Nanoscale and power-efficient electro-optic (EO) modulators are essential components for optical interconnects that are beginning to replace electrical wiring for intra- and inter-chip communications. Silicon-based EO modulators show sufficient figures of merits regarding device footprint, speed, power consumption and modulation depth. However, the weak electro-optic effect of silicon still sets a technical bottleneck for these devices, motivating the development of modulators based on new materials. Graphene, a two-dimensional carbon allotrope, has emerged as an alternative active material for optoelectronic applications owing to its exceptional optical and electronic properties. Here, we demonstrate a high-speed graphene electro-optic modulator based on a graphene-boron nitride (BN) heterostructure integrated with a silicon photonic crystal nanocavity. Strongly enhanced light-matter interaction of graphene in a submicron cavity enables efficient electrical tuning of the cavity reflection. We observe a modulation depth of 3.2 dB and a cut-off frequency of 1.2 GHz.

Optics
High Efficiency Graphene-Silicon Hybrid-Integrated Thermal and Electro-Optical Modulators

Xiaoxuan Wu,Zhengyi Cao,Tianxiang Zhao,Yun Wu,Zhonghui Li,Spyros Doukas,Elefterios Lidorikis,Yu Xue,Liu,Omid Ghaebi,Giancarlo Soavi,Junpeng Lu,Zhenhua Ni,Junjia Wang

DOI: https://doi.org/10.1039/d4nh00160e

2024-01-01

Nanoscale Horizons

Abstract:Graphene modulators are considered a potential solution for achieving high-efficiency light modulation, and graphene-silicon hybrid-integrated modulators are particularly favorable due to their CMOS compatibility and low cost. The exploitation of graphene modulator latent capabilities remains an ongoing endeavour to improve the modulation and energy efficiency. Here, high-efficiency graphene-silicon hybrid-integrated thermal and electro-optical modulators are realized using gold-assisted transfer. We fabricate and demonstrate a microscale thermo-optical modulator with a tuning efficiency of 0.037 nm mW-1 and a high heating performance of 67.4 K mu m3 mW-1 on a small active area of 7.54 mu m2 and a graphene electro-absorption modulator featuring a high speed data rate reaching 56 Gb s-1 and a low power consumption of 200 fJ per bit. These devices show superior performance compared to the state of the art devices in terms of high efficiency, low process complexity, and compact device footage, which can support the realization of high-performance graphene-silicon hybrid-integrated photonic circuits with CMOS compatibility. The graphene-silicon hybrid-integrated platform, enabled by a gold-assisted transfer method, supports high-performance on-chip optical devices, demonstrating thermo and electro-optical modulation with enhanced efficiency and greater speed.
Indium-Tin-Oxide for High-performance Electro-optic Modulation

Zhizhen Ma,Zhuoran Li,Behrouz Movahhed Nouri,Ke Liu,Chenran Ye,Hamed Dalir,Volker J. Sorger

2023-05-18

Abstract:Advances in opto-electronics are often led by discovery and development of materials featuring unique properties. Recently the material class of transparent conductive oxides (TCO) has attracted attention for active photonic devices on-chip. In particular Indium Tin Oxide (ITO) is found to have refractive index changes on the order of unity. This property makes it possible to achieve electro-optic modulation of sub-wavelength device scales, when thin ITO films are interfaced with optical light confinement techniques such as found in plasmonics; optical modes are compressed to nanometer scale to create strong light-matter-interactions. Here we review efforts towards utilizing this novel material for high-performance and ultra-compact modulation. While high performance metrics are achieved experimentally, there are open questions pertaining the permittivity modulation mechanism of ITO. Furthermore, we show that a footprint-saving waveguide inline cavity can enhance obtainable extinction-ratio to insertion-loss ratios by about one order of magnitude over non-cavity based version. Moreover, we offer a speed analysis that shows that the device is resistance limited, but not capacitance or drift-carrier limited. Interestingly, two bias options exist for ITO and we find that a side-connection enables devices that should in principle enable several hundred of GHz fast devices, using our routinely achievable ITO film resistivities. Finally, we offer a brief discuss about footprint savings of compact ITO modulators showing a 3-orders of magnitude smaller footprint over Silicon photonic MZI-based modulators.

Optics,Applied Physics
Ultra-Compact Graphene-Embedded Optical Phase Modulators

Ran Hao,Jia-Min Jin,Er-Ping Li

DOI: https://doi.org/10.1109/ursigass.2014.6929409

2014-01-01

Abstract:Optical modulator is the key components in the optical communication, yet the low modulation efficiency limits its development. A high efficiency, ultra-compact optical modulator is proposed which the electro-refraction effect has been significantly enhanced. The different kinds of graphene schemes are compared and discussed. A graphene embedded Mach-Zender modulator has been theoretically demonstrated with the advantage of ultra-compact footprint (4×30 μm2), high modulation efficiency (20 V·μm), fast modulation speed and large extinction ratio (35dB). Our results may promote various on-chip active components, boosting the utilization of graphene in optical applications.
High Performance Graphene/semiconductor Van Der Waals Heterostructure Optoelectronic Devices

Shisheng Lin,Yanghua Lu,Juan Xu,Sirui Feng,Jianfeng Li

DOI: https://doi.org/10.1016/j.nanoen.2017.07.036

IF: 17.6

2017-01-01

Nano Energy

Abstract:As a typical two-dimensional (2D) atomic thin material, the massless Dirac Fermions in graphene promise many unique physical properties, such as high carrier mobility and high light transmission. However, after a decade of research and a huge number of papers focusing on graphene, high performance graphene based optoelectronic devices is still lacked, which should be achieved for realizing competitive industrial graphene product. In this review, we point out high performance optoelectronic devices such as solar cells, photodetector and light emitting diodes can be demonstrated by properly marrying graphene with semiconductor. The fundamental physics of graphene/semiconductor heterostructure as well as its optoelectronic properties are comprehensively addressed. We suggest six strategies of improving the performance of graphene/semiconductor based optoelectronic devices. The outstanding light harvesting enhancement characteristic of surface plasmon is detailed represented to highlight its importance and potential. Especially, we indicate that graphene/semiconductor heterostructure solar cell can reach a power conversion efficiency of 30%.
High-performance Opto-Electronics with Emerging Materials

Hao Wang,Martin Thomaschewski,Chandraman Patil,Yaliang Gui,Behrouz Movahhed Nouri,Hamed Dalir,Volker J. Sorger

DOI: https://doi.org/10.1117/12.2639327

2022-01-01

Abstract:The rapid development of nanophotonic technologies has put forward higher requirements for optoelectronic devices, including ultra-small footprints, high-speed operation, high efficiency, and low power consumption. Optoelectronics based on emerging materials can provide the material framework that can keep pace with future technological demands. Here we will share our latest innovations and device demonstrations of using low-dimensional materials towards discovering high-performance photodetector and electro-optic modulator performances. We will share the concept of strainoptronics enabling to engineer a plurality of material properties (bandgap, workfunction, mobility) and show how a Transition-Metal Dichalcogenides (TMDC)-based efficient photodetector can be realized using MoS2 on a Silicon photonic platform. Furthermore, using scaling-length-theory, we show our roadmap and results of high gain-bandwidth product photodetectors using a metal slot atop a silicon photonic waveguide towards optimizing the carrier-lifetime to transit time ratio. These devices were enabled by a novel 3D-like 2D material transfer system, which also enabled us to demonstrate a 2D material PN junction photodetector operating at zero bias, thus leading to extremely low dark currents and hence very efficient noise-equivalent powers. Finally, we show our latest work on ITO-thin film electro-optic modulators with 40 GHz 3dB roll-off, requiring just 200 meV of the drive voltage. Further development of the modulator platform shows the potential of a 100 GHz fast MZI modulator with a footprint that is 1,000 more compact than standard Silicon photonics and 10,000 more compact compared to Lithium Niobite.
Device Architectures for Low Voltage and Ultrafast Graphene Integrated Phase Modulators

Dun Mao,Chen Cheng,Feifan Wang,Yahui Xiao,Tiantian Li,Lorry Chang,Anishkumar Soman,Thomas Kananen,Xian Zhang,Michael Krainak,Po Dong,Tingyi Gu

DOI: https://doi.org/10.1109/JSTQE.2020.3026357

IF: 4.9

2021-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:The atomic layer thin geometry and semi-metallic band diagram of graphene can be utilized for significantly improving the performance matrix of integrated photonic devices. Its semiconductor-like behavior of Fermi-level tunability allows graphene to serve as an active layer for electro-optic modulation. As a low loss metal layer, graphene can be placed much closer to active layer for low voltage operation. In this work, we investigate hybrid device architectures utilizing semiconductor and metallic properties of the graphene for ultrafast and energy-efficient electrooptic phase modulators on semiconductor and dielectric platforms. (1) Directly contacted graphene-silicon heterojunctions. Without the oxide layer, the carrier density of graphene can be modulated by direct contact to silicon layer, while silicon intrinsic region stays mostly depleted. With doped silicon as electrodes, carriers can be quickly injected and depleted from the active region in graphene. The ultrafast carrier transit time and small RC constant promise ultrafast modulation speed (3 dB bandwidth of 67 GHz) with an estimated V p center dot L of 1.19 V center dot mm. (2) Graphene integrated lithium niobite modulator. As a transparent electrode, graphene can be placed close to integrated lithium niobate waveguide for improving coupling coefficient between optical mode profile and electric field with minimal additional loss (4.6 dB/cm). Numerical simulation indicates a 2.5x improvement of electro-optic field overlap coefficient, with an estimated V p of 0.2 V.
Nanoscale Graphene Electro-Optic Modulators

Zhaolin Lu,Wangshi Zhao

DOI: https://doi.org/10.48550/arXiv.1112.3361

2011-12-31

Abstract:Research on graphene has revealed its unique optical properties, including strong coupling with light, high-speed operation, and gate-variable optical conductivity, which promise to satisfy the needs of future electro-optic (EO) modulators. In particular, recent work demonstrated a broadband EO modulator based on the interband absorption of graphene with overall length only 40{\mu}m. However, compared with the size of on-chip electronic components it is still bulky. On-chip optical interconnects require EO modulation at the nanoscale. The key to achieve nanoscale graphene EO modulation is to greatly enhance light-graphene interaction based on novel waveguides and platforms. Herein, we present our recent exploration of graphene EO modulators based on graphene sandwiched in dielectric or plasmonic waveguides. With a suitable gate voltage, the dielectric constant of graphene can be tuned to be very small due to the effect of intraband electronic transition, resulting in "graphene-slot waveguides" and greatly enhanced absorption modes. Up to 3-dB modulation depth can be achieved within 800nm long silicon waveguides, or 120nm long plasmonic waveguides based on small signal analysis. They have the advantages of nanoscale footprints, small insertion loss, low power consumption, and potentially ultrahigh speed, as well as being CMOS-compatible.

Optics
A Graphene-on-gap Modulator with High Modulation Efficiency

Ran Hao,Ziwei Ye,Xiliang Peng,Erping Li

DOI: https://doi.org/10.1109/icocn.2017.8121398

2017-01-01

Abstract:We propose a high efficient graphene-on-gap modulator (GOGM) by employing the hybrid plasmonic effect, whose modulation efficiency is ~8-folds larger than that of present graphene-on-silicon modulator (GOSM) (~0.1 dB / μm). The proposed modulator has the advantage of short modulation length ~3.6 μm, relatively low insertion loss ~0.32 dB and larger modulation bandwidth ~0.48 THz. Moreover, an efficient taper coupler has been designed to convert the quasi-transverse electric (TE) mode of conventional silicon waveguide to the hybrid plasmonic mode of GOGM, with a high coupling efficiency of 91%. This study may promote the design of high-performance on-chip electro-optical modulator.
High Performance Graphene Integrated Photonics Platform Enabled by Gold-assisted Transfer

Xiaoxuan Wu,Zhengyi Cao,Tianxiang Zhao,Yun Wu,Zhonghui Li,Spyros Doukas,Elefterios Lidorikis,Yu Xue,Liu Liu,Omid Ghaebi,Giancarlo Soavi,Junpeng Lv,Zhenghua Ni,Junjia Wang

2024-03-17

Abstract:Graphene is promising for nanoscale, efficient, ultra-fast photo- and opto-electronic devices because of its remarkable electrical and optical properties, such as fast electron relaxation and heat dissipation. Here, we realize high-performance graphene integrated photonics platform enabled by gold-assisted transfer. Thanks to our optimized transfer technique, we fabricate and demonstrate (1) a microscale thermo-optic modulator with a tuning efficiency of 0.037 nm/mW and high heating performance of 67.4 K${\mu}m^{3}mW^{-1}$ on a small active area of 7.54 ${\mu}m^{2}$ and (2) a graphene electro-absorption modulator featuring an high modulation bandwidth up to 26.8 GHz and a high-speed data rate reaching 48 Gb/s, and (3) a graphene Mach-Zehnder interferometer modulator with a high normalized modulation efficiency of 0.027 dBV$^{-1}{\mu}m^{-1}$. Our graphene integrated photonics platform has far superior performances compared to state of the art in terms of efficiency, low process complexity, and compact device footage. Thus, our approach and results provide the background for the realization of high-performance integrated photonic circuits with CMOS compatibility.

Optics,Applied Physics
High Efficiency Electro-Optic Modulation in a Graphene Silicon Hybrid Tapered Microring Resonator

Yonghua Wang,Lei,Junbin Zang,Wenchan Dong,Xinliang Zhang,Ping Xu

DOI: https://doi.org/10.1109/access.2021.3089465

IF: 3.9

2021-01-01

IEEE Access

Abstract:Graphene silicon devices have attracted significant attention due to their outstanding electronic and optical properties. By electrically tuning the Fermi level of the monolayer graphene sheet, electro-optic (EO) modulators have been widely analyzed. Despite significant progress has been achieved on high-speed modulation with integrated graphene silicon waveguides, it remains challenging to realize a high modulation efficiency since the light absorption in graphene is limited. Here, we propose and experimentally demonstrate a high efficiency EO modulator using a graphene-assisted tapered silicon ring resonator, where the tapered zone is covered by a graphene/graphene capacitor. This graphene-assisted tapered zone strongly enhances the graphene-light interaction that the achieved static and dynamic modulation (1KHz) depths are up to 26 dB and 12 dB, respectively. Physical mechanism of the modulation based on this nanostructure is also discussed in detail. The proposed nanostructure provides a promising alternative method for high-performance EO modulator, which is essential for the on-chip optical communication, optical computing and optical signal processing.
Organic electro-optic polymer materials and organic-based hybrid electro-optic modulators

Yan Wang,Tongtong Liu,Jiangyi Liu,Chuanbo Li,Zhuo Chen,Shuhui Bo

DOI: https://doi.org/10.1088/1674-4926/43/10/101301

2022-01-01

Journal of Semiconductors

Abstract:High performance electro-optic modulator, as the key device of integrated ultra-wideband optical systems, have become the focus of research. Meanwhile, the organic-based hybrid electro-optic modulators, which make full use of the advantages of organic electro-optic (OEO) materials (e.g. high electro-optic coefficient, fast response speed, high bandwidth, easy processing/integration and low cost) have attracted considerable attention. In this paper, we introduce a series of high-performance OEO materials that exhibit good properties in electro-optic activity and thermal stability. In addition, the recent progress of organic-based hybrid electro-optic devices is reviewed, including photonic crystal-organic hybrid (PCOH), silicon-organic hybrid (SOH) and plasmonic-organic hybrid (POH) modulators. A high-performance integrated optical platform based on OEO materials is a promising solution for growing high speeds and low power consumption in compact sizes.

High performance Graphene and ITO-based electro-optic modulators and switches

High-performance Graphene-Integrated Thermo-Optic Switch: Design and Experimental Validation [Invited]

Ultrafast All-Optical Graphene Modulator.

Recent Developments in Graphene-Based Optical Modulators

Characteristics of Electro-Refractive Modulating Based on Graphene-Oxide-Silicon Waveguide

Graphene, Plasmonic and Silicon Optical Modulators

High-speed Plasmonic ITO Modulators

Advancements in Plasmonic and Graphene-based High-Performance Modulators

High Efficiency Graphene-Silicon Hybrid-Integrated Thermal and Electro-Optical Modulator

High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity

High Efficiency Graphene-Silicon Hybrid-Integrated Thermal and Electro-Optical Modulators

Indium-Tin-Oxide for High-performance Electro-optic Modulation

Ultra-Compact Graphene-Embedded Optical Phase Modulators

High Performance Graphene/semiconductor Van Der Waals Heterostructure Optoelectronic Devices

High-performance Opto-Electronics with Emerging Materials

Device Architectures for Low Voltage and Ultrafast Graphene Integrated Phase Modulators

Nanoscale Graphene Electro-Optic Modulators

A Graphene-on-gap Modulator with High Modulation Efficiency

High Performance Graphene Integrated Photonics Platform Enabled by Gold-assisted Transfer

High Efficiency Electro-Optic Modulation in a Graphene Silicon Hybrid Tapered Microring Resonator

Organic electro-optic polymer materials and organic-based hybrid electro-optic modulators