Abstract:Abstract Electro-optic modulators have been identified as the key drivers for optical communication and signal processing. With an ongoing miniaturization of photonic circuitries, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic modulator without sacrificing bandwidth and modulation strength. While silicon-based electro-optic modulators have been demonstrated, they require large device footprints of the order of millimeters as a result of weak non-linear electro-optical properties. The modulation strength can be increased by deploying a high-Q resonator, however with the trade-off of significantly sacrificing bandwidth. Furthermore, design challenges and temperature tuning limit the deployment of such resonance-based modulators. Recently, novel materials like graphene have been investigated for electro-optic modulation applications with a 0.1 dB per micrometer modulation strength, while showing an improvement over pure silicon devices, this design still requires device lengths of tens of micrometers due to the inefficient overlap between the thin graphene layer, and the optical mode of the silicon waveguide. Here we experimentally demonstrate an ultra-compact, silicon-based, electro-optic modulator with a record-high 1 dB per micrometer extinction ratio over a wide bandwidth range of 1 μm in ambient conditions. The device is based on a plasmonic metal-oxide-semiconductor (MOS) waveguide, which efficiently concentrates the optical modes’ electric field into a nanometer thin region comprised of an absorption coefficient-tuneable indium-tin-oxide (ITO) layer. The modulation mechanism originates from electrically changing the free carrier concentration of the ITO layer which dramatically increases the loss of this MOS mode. The seamless integration of such a strong optical beam modulation into an existing silicon-on-insulator platform bears significant potential towards broadband, compact and efficient communication links and circuits.

Advancements in Plasmonic and Graphene-based High-Performance Modulators

Graphene, Plasmonic and Silicon Optical Modulators

Ultrafast All-Optical Graphene Modulator.

Ultra-Compact Graphene-Embedded Optical Phase Modulators

Ultra-compact Silicon Nanophotonic Modulator with Broadband Response

Highly Efficient Graphene-Based Optical Modulator with Edge Plasmonic Effect

Efficient All-Optical Plasmonic Modulators with Atomically Thin Van Der Waals Heterostructures

Recent Developments in Graphene-Based Optical Modulators

A Graphene-on-gap Modulator with High Modulation Efficiency

High-speed Plasmonic ITO Modulators

High Efficiency Graphene-Silicon Hybrid-Integrated Thermal and Electro-Optical Modulator

Graphene-based Silicon Modulators

Experimental Demonstration of a Graphene-Based Hybrid Plasmonic Modulator

Integrated ultra-high-performance graphene optical modulator

High-performance Opto-Electronics with Emerging Materials

Recent Progress in Graphene-Based Optical Modulators on Silicon Photonics Platform

High-Speed Efficient On-Chip Electro-Optic Modulator Based on Midinfrared Hyperbolic Metamaterials

Graphene-based hybrid plasmonic optical electro-absorption modulator on InP platform

Device Architectures for Low Voltage and Ultrafast Graphene Integrated Phase Modulators

Single-layer graphene optical modulator based on arrayed hybrid plasmonic nanowires

Design and Electro-Optical Co-Optimization of High-Speed Travelling Wave Silicon-Organic Hybrid Modulators