Abstract:Different deposition energies of Pt atoms constructed two types of interfacial structures in Fe5GeTe2/Pt heterostructures, which greatly changed the Curie temperature and magnetic anisotropy of the two systems. The results suggest that the interfacial artifacts cannot be neglected in measuring static magnetic properties and dynamic magnetization behavior, especially in 2D van Waals‐based stacks prepared by the physical deposition method. Interface engineering is a promising strategy for controlling the Curie temperature (Tc) and perpendicular magnetic anisotropy (PMA) in magnetic 2D van der Waals (2D vdWs)‐based heterostructures. However, establishing high‐quality interface structures in magnetic 2D vdWs/metal stacks, crucial for maximizing interface effects, remains a significant challenge. Here, a Fe5‐xGeTe2/Pt (F5GT/Pt) prototype with a superior interface quality is achieved using a low‐power physical vapor deposition technique. The magnetic properties of the F5GT/Pt heterostructures are strongly influenced by employing the specific physical deposition method. Stable ferromagnetism at 400 K is observed when depositing Pt atoms with relatively high energy, despite the Tc of pristine F5GT being below 300 K. This unexpected high‐temperature ferromagnetism is attributed to the formation of a ferromagnetic alloy at the interface, commonly present in vdWs‐based stacks fabricated through physical deposition but often overlooked. The deposit of Pt atoms with ultralow energy leads to the formation of a unique Fe5‐xGeTe2/Fe3‐xGeTe2 heterojunction at the interface, significantly enhancing the PMA. This work emphasizes the importance of interface structures in vdWs‐based devices, suggesting that controlling the growth process offers an effective approach to construct and engineer vdWs heterostructures, thus improving the performance and introducing new functionalities to spintronic devices.

Superlattice of FexGe1−xnanodots and Nanolayers for Spintronics Application

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Magnetic Ordering And Anisotropy Of Epitaxially Grown Fexcu1-X Alloy On Gaas(001)

Thickness-Tunable Growth of Composition-Controllable Two-Dimensional FexGeTe2

Two-dimensional Ferromagnetic Superlattices.

Nanoscale Engineering of Ge based Diluted Magnetic Semiconductors for Room Temperature Spintronics Application

High-Performance FexGeTe2-Based (x=4 or 5) van der Waals Magnetic Tunnel Junctions

Nanoengineering of an Si/MnGe Quantum Dot Superlattice for High Curie-temperature Ferromagnetism.

MnGe Magnetic Nanocolumns and Nanowells.

Homogeneous Amorphous Fexge1-X Magnetic Semiconductor Films With High Curie Temperature And High Magnetization

Quest for High-Curie Temperature MnxGe1−x Diluted Magnetic Semiconductors for Room-Temperature Spintronics Applications

Wafer-scale two-dimensional ferromagnetic Fe3GeTe2 thin films grown by molecular beam epitaxy

Unraveling the electronic structure and magnetic transition evolution across monolayer, bilayer, and multilayer ferromagnetic Fe 3 GeTe 2

Magnetic Mn-Doped Ge Nanostructures

Microstructure and Ferromagnetism of Mn0.05Ge0.95 Quantum Dots/Graphene Heterostructures for Spintronic Devices

Enhanced magnetic and electrical properties of Co-doped Fe5GeTe2

High-Performance FexGeTe2− Based ( X =

Structures and magnetic properties of the FexMn1-x alloys epitaxially grown on GaAs(001) surface

Ferromagnetism And Electronic Transport In Epitaxial Ge1-Xfexte Thin Film Grown By Pulsed Laser Deposition

Interface‐Induced Anomalous Behavior of Magnetism in FexGeTe2/Pt Bilayer