Abstract:We investigate the electronic, structural, and topologicalpropertiesof the SnTe and PbTe cubic nanowires using ab initio calculations. Using standard and linear-scale density functionaltheory, we go from the ultrathin limit up to the nanowire thicknessesobserved experimentally. Finite-size effects in the ultrathin limitproduce an electric quadrupole and associated structural distortions;these distortions increase the band gap, but they get reduced withthe size of the nanowires and become less and less relevant. UltrathinSnTe cubic nanowires are trivial band gap insulators; we demonstratethat by increasing the thickness, there is an electronic transitionto a spin–orbit insulating phase due to trivial surface statesin the regime of thin nanowires. These trivial surface states witha spin–orbit gap of a few meV appear at the same k-point of the topological surface states. Going to the limit of thicknanowires, we should observe the transition to the topological crystallineinsulator phase with the presence of two massive surface Dirac fermionshybridized with the persistent trivial surface states. Therefore,we have the copresence of massive Dirac surface states and trivialsurface states close to the Fermi level in the same region of the k-space. According to our estimation, the cubic SnTe nanowiresare trivial insulators below the critical thickness tc1 = 10 nm, and they become spin–orbitinsulators between tc1 = 10 nm and tc2 = 17nm, while they transit to the topological phase above the criticalthickness of tc2 = 17nm. These critical thickness values are in the range of typical experimentalthicknesses, making the thickness a relevant parameter for the synthesisof topological cubic nanowires. Pb1–xSnxTe nanowires would have boththese critical thicknesses tc1 and tc2 at largervalues depending on the doping concentration. We discuss the limitationsof density functional theory in the context of topological nanowiresand the consequences of our results on topological electronics.

Topological Crystalline Insulator Pb1-xSnxSe Nanowires with {100} Facets

Pentagonal nanowires from topological crystalline insulators: a platform for intrinsic core-shell nanowires and higher-order topology

Axially lattice-matched wurtzite/rock-salt GaAs/Pb1−xSnxTe nanowires

Vertical/Planar Growth and Surface Orientation of Bi2Te3 and Bi2Se3 Topological Insulator Nanoplates.

Spin-orbit insulating phase in SnTe cubic nanowires: consequences on the topological surface states

Synthesis of SnTe Nanoplates with {100} and {111} Surfaces

Controlled Vapor-Liquid-Solid Growth of Long and Remarkably Thin Pb 1- x Sn x Te Nanowires with Strain-Tunable Ferroelectric Phase Transition

Observation of Topological Crystalline Insulator phase in the lead tin chalcogenide Pb1-xSnxTe material class

Topological insulator nanowires and nanoribbons.

Catalyst-free MBE growth of PbSnTe nanowires with tunable aspect ratio

Experimental Observation of Dirac-like Surface States and Topological Phase Transition in Pb(1-x)Sn(x)Te(111) Films.

Understanding the anisotropic growth of VS grown PbSnTe nanowires

Dirac parameters and topological phase diagram of Pb1-xSnxSe from magneto-spectroscopy

Topological states on uneven (Pb,Sn)Se (001) surfaces

Reconstruction, rumpling, and Dirac states at the (001) surface of a topological crystalline insulator Pb1-xSnxSe

Density Functional Theory Study of the Spin–Orbit Insulating Phase in SnTe Cubic Nanowires: Implications for Topological Electronics

Delocalized Surface Electronic States on Polar Facets of Semiconductor Nanocrystals.

ARPES Study of the Epitaxially Grown Topological Crystalline Insulator SnTe(111)

Controlled Synthesis of Single-Crystal SnSe Nanoplates