Enhanced Thermoelectric Properties of Ga-Doped In2o3 Ceramics Via Synergistic Band Gap Engineering and Phonon Suppression

Yong Liu,Wei Xu,Da-Bo Liu,Meijuan Yu,Yuan-Hua Lin,Ce-Wen Nan

DOI: https://doi.org/10.1039/c5cp00739a

2015-01-01

Abstract:The performance of Ge doped In2O3 thermoelectric materials is enhanced via band structure engineering and phonon suppression.

What problem does this paper attempt to address?

Enhanced Thermoelectric Performance of In2O3-based Ceramics Via Nanostructuring and Point Defect Engineering.

Jin-Le Lan,Yaochun Liu,Yuan-Hua Lin,Ce-Wen Nan,Qing Cai,Xiaoping Yang

DOI: https://doi.org/10.1038/srep07783

IF: 4.6

2015-01-01

Scientific Reports

Abstract:The issue of how to improve the thermoelectric figure of merit (ZT) in oxide semiconductors has been challenging for more than 20 years. In this work, we report an effective path to substantial reduction in thermal conductivity and increment in carrier concentration, and thus a remarkable enhancement in the ZT value is achieved. The ZT value of In2O3 system was enhanced 4-fold by nanostructuing (nano-grains and nano-inclusions) and point defect engineering. The introduction of point defects in In2O3 results in a glass-like thermal conductivity. The lattice thermal conductivity could be reduced by 60%, and extraordinary low lattice thermal conductivity (1.2 W m(-1) K(-1) @ 973 K) below the amorphous limit was achieved. Our work paves a path for enhancing the ZT in oxides by both the nanosturcturing and the point defect engineering for better phonon-glasses and electron-crystal (PGEC) materials.
Thermoelectric Performance of Zn and GeCo-Doped In2O3 Fine-Grained Ceramics by the Spark Plasma Sintering

Bo Cheng,Hui Fang,Jinle Lan,Yong Liu,Yuan-Hua Lin,Ce-Wen Nan

DOI: https://doi.org/10.1111/j.1551-2916.2011.04640.x

IF: 4.186

2011-01-01

Journal of the American Ceramic Society

Abstract:Zn and Ge co-doped In2O3-based ceramics have been prepared by the spark plasma sintering (SPS) technique. Microstructure studies show that dense and fine-grained ceramic samples can be obtained at low temperature sintered by SPS, and the grain size is about 100–300 nm. These In2O3-based ceramics show higher electrical conductivity (~103 S/cm) as compared with the pure In2O3 (~50 S/cm). In addition, the samples also exhibited large power factor, especially the In1.98Zn0.01Ge0.01O3 sample ~ 7.5 × 10-4 W/mK2. The evaluated maximum ZT value is 0.20 at 973 K, which makes them promising materials to be used in thermoelectric devices.
Thermoelectric Performance Enhancement of Vanadium Doped N-Type In2O3 Ceramics Via Carrier Engineering and Phonon Suppression

Abid Ahmad,Majid Hussain,Zhifang Zhou,Rui Liu,Yuan-Hua Lin,Ce-Wen Nan

DOI: https://doi.org/10.1021/acsaem.9b02011

IF: 6.4

2019-01-01

ACS Applied Energy Materials

Abstract:n-Type oxide thermoelectric materials remain challenging for various applications because of their average electrical conductivity, high thermal conductivity, and hence low thermoelectric performance. In this work, we have studied the chemical, structural, and transport properties of vanadium doped In2O3 thermoelectric materials prepared via spark plasma sintering (SPS). The solubility of V in In2O3 is about 6 at % and V4O9 as a secondary phase was observed in 8 at %. V doping leads to a synergistic improvement in electrical conductivity with a simultaneous reduction of the thermal conductivity, yielding ZT = 0.42 at 973 K in In1.88V0.12O3 that is 320% improvement than that of pristine In2O3. This enhancement in electrical conductivity is because of change in charge concentration via pentavalent vanadium doping at the trivalent indium site. The scattering of heat-carrying phonons due to the effects of mass fluctuations and substitutional defects caused by V doping leads to a reduction in heat conduction. Our results suggest that the TE properties of In2O3 can be improved by simultaneously increasing PF and reducing thermal conductivity via V doping.
In-doping induced resonant level and thermoelectric performance enhancement in n-type GeBi 2 Te 4 single crystals with intrinsically low lattice thermal conductivity

Peng Chen,Bin Zhang,Hanjun Zou,Xiangnan Gong,Yanci Yan,Jingwei Li,Daliang Zhang,Guang Han,Xu Lu,Hong Wu,Yun Zhou,Xiaoyuan Zhou,Guoyu Wang

DOI: https://doi.org/10.1016/j.cej.2023.143529

IF: 15.1

2023-05-21

Chemical Engineering Journal

Abstract:Resonant level, the impurity level located inside the valence/conduction band, is an effective strategy for decoupling the electrical conductivity and Seebeck coefficient and enhancing the thermoelectric power factor. In this work, we show that In doping induces resonant level and enhances the thermoelectric performance of GeBi 2 Te 4 , a promising n-type thermoelectric material with layered structure. Single crystals grown by Bridgman method were used in this study to take the advantage of its anisotropic transport properties. An ultralow lattice thermal conductivity of ∼0.51 W m −1 K −1 at 323 K was found along the c -axis of GeBi 2 Te 4 , driven by intrinsic cation disorder and the low phonon group velocity from the relatively weak chemical bonds as well as the strong lattice anharmonicity caused by hierarchical bond orders. Both enhanced electrical conductivity and Seebeck coefficient were observed in the In-doped samples, indicating that In-doping not only increases the carrier concentration, but also introduces the resonant level that was further confirmed by the first-principles calculation. A maximum zT of ∼0.42 at 523 K and an average zT of 0.36 over 323 to 573 K were achieved in Ge 0.97 In 0.03 Bi 2 Te 4 crystal sample, ∼100% and ∼89% enhancement compared to those of pristine single crystal sample, respectively. This study demonstrates another example of resonant level for thermoelectric performance enhancement, which may be applied to other related materials.

engineering, chemical, environmental
Thermoelectric Performance of Zn and Ge Co-Doped In2o3 Fine-Grained Ceramics by the Spark Plasma Sintering

Bo Cheng,Hui Fang,Jinle Lan,Yong Liu,Yuan-Hua Lin,Ce-Wen Nan

DOI: https://doi.org/10.1111/j.1551-2916.2011.04640.x

IF: 4.186

2011-01-01

Journal of the American Ceramic Society

Abstract:Zn and Ge co-doped In2O3-based ceramics have been prepared by the spark plasma sintering (SPS) technique. Microstructure studies show that dense and fine-grained ceramic samples can be obtained at low temperature sintered by SPS, and the grain size is about 100-300 nm. These In2O3-based ceramics show higher electrical conductivity (similar to 10(3) S/cm) as compared with the pure In2O3 (similar to 50 S/cm). In addition, the samples also exhibited large power factor, especially the In1.98Zn0.01 Ge0.01O3 sample similar to 7.5 x 10(-4) W/mK(2). The evaluated maximum ZT value is 0.20 at 973 K, which makes them promising materials to be used in thermoelectric devices.
Realizing High Thermoelectric Performance in GeTe‐Based Supersaturated Solid Solutions

Xusheng Liu,Wu Wang,Yan Wang,Peng Li,Qiqi Tang,Baohai Jia,Zhenlong Huang,Yuan Lin,Binbin Jiang,Jiaqing He

DOI: https://doi.org/10.1002/aenm.202304029

IF: 27.8

2024-03-10

Advanced Energy Materials

Abstract:The low Seebeck coefficient and the high thermal conductivity deteriorate the thermoelectric properties of GeTe. Herein, the Seebeck coefficient is enhanced by promoting band convergency induced by the strongly correlated d, f electrons of rare earth elements. The doping of Pb and Bi causes avoided crossing and hierarchical structure, strengthening the full‐spectrum scattering of phonons and decelerating the sound velocity. As a highly promising thermoelectric material in the mid‐temperature region, pristine GeTe shows deteriorated thermoelectric properties due to the low Seebeck coefficient and the intrinsic high thermal conductivity. Herein, it is discovered that the introduction of strongly correlated d, f electrons by alloying rare‐earth atoms at Ge sites will increase the band effective mass and promote band convergency, which can largely improve the electric transport property. Moreover, the heavy atoms (Pb, Bi) doping induces optical phonon softening and the avoided crossing between acoustic and optical phonon branches, decelerating both optical and acoustic phonon velocities. The modulated composition wave from the fluctuated multi‐component distribution introduces a complicated hierarchical structure including point defects and nanoprecipitates, which provides all‐scale scattering sources for heat‐carrying phonons and results in low lattice thermal conductivity. Consequently, a high zT of 2.4 at 800 K can be obtained in the Ge0.86Pb0.09Bi0.03Ce0.005Te sample due to the combination of strong correlation for d, f electrons and the full‐spectrum scattering for phonons. This work provides an effective strategy to increase the thermoelectric performance of IV–VI compounds by combining the modulated band structure and the softening phonon dispersion.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,energy & fuels
Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys Via Introducing Cu2Te Nanocrystals and Resonant Level Doping.

Qingtang Zhang,Zhuoyang Ti,Yuelei Zhu,Yongsheng Zhang,Yang Cao,Shuang Li,Meiyu Wang,Di Li,Bo Zou,Yunxiang Hou,Peng Wang,Guodong Tang

DOI: https://doi.org/10.1021/acsnano.1c05650

IF: 17.1

2021-01-01

ACS Nano

Abstract:The binary compound of GeTe emerging as a potential medium-temperature thermoelectric material has drawn a great deal of attention. Here, we achieve ultralow lattice thermal conductivity and high thermoelectric performance in In and a heavy content of Cu codoped GeTe thermoelectrics. In dopants improve the density of state near the surface of Femi of GeTe by introducing resonant levels, producing a sharp increase of the Seebeck coefficient. In and Cu codoping not only optimizes carrier concentration but also substantially increases carrier mobility to a high value of 87 cm2 V-1 s-1 due to the diminution of Ge vacancies. The enhanced Seebeck coefficient coupled with dramatically enhanced carrier mobility results in significant enhancement of PF in Ge1.04-x-yInxCuyTe series. Moreover, we introduce Cu2Te nanocrystals' secondary phase into GeTe by alloying a heavy content of Cu. Cu2Te nanocrystals and a high density of dislocations cause strong phonon scattering, significantly diminishing lattice thermal conductivity. The lattice thermal conductivity reduced as low as 0.31 W m-1 K-1 at 823 K, which is not only lower than the amorphous limit of GeTe but also competitive with those of thermoelectric materials with strong lattice anharmonicity or complex crystal structures. Consequently, a high ZT of 2.0 was achieved for Ge0.9In0.015Cu0.125Te by decoupling electron and phonon transport of GeTe. This work highlights the importance of phonon engineering in advancing high-performance GeTe thermoelectrics.
Thermoelectric Performance of Zn and Nd Co-Doped In2o3 Ceramics

Yong Liu,Yuan-Hua Lin,Jinle Lan,Bo-Ping Zhang,Wei Xu,Ce-Wen Nan,Hongmin Zhu

DOI: https://doi.org/10.1007/s11664-011-1546-8

IF: 2.1

2011-01-01

Journal of Electronic Materials

Abstract:Polycrystalline In2O3 ceramics co-doped with Zn and Nd were prepared by the spark plasma sintering (SPS) process, and microstructure and thermoelectric (TE) transport properties of the ceramics were investigated. Our results indicate that co-doping with Zn2+ and Nd3+ shows a remarkable effect on the transport properties of In2O3-based ceramics. Large electrical conductivity (~130 S cm−1) and thermopower (~220 μV K−1) can be observed in these In2O3-based ceramic samples. The maximum power factor (PF) reaches 5.3 × 10−4 W m−1 K−2 at 973 K in the In1.92Nd0.04Zn0.04O3 sample, with a highest ZT of ~0.25.
Synergetic Optimization via Indium and Rare Metal Yttrium Co-doping in GeTe Results in High Power Factor and Excellent Thermal Performance

Zhengtang Cai,Yu Fang,Chun Ma,Kaipeng Zheng,Kang Lei,Shanming Ke,Renkui Zheng,Han Li

DOI: https://doi.org/10.1021/acsami.4c15281

IF: 9.5

2024-11-24

ACS Applied Materials & Interfaces

Abstract:Excess intrinsic Ge vacancies in GeTe materials lead to excessively high hole concentration and high thermal conductivity, producing poor thermoelectric performance. Here, synergistic control and optimization of the thermoelectric transport properties and microstructure of GeTe-based materials were achieved through co-doping with In and rare earth element Y, resulting in a significant enhancement of thermoelectric performance. The Ge(0.94)In(0.03)Y(0.03)Te sample reached a ZT(max) of 1.84 at 773...

materials science, multidisciplinary,nanoscience & nanotechnology
High-temperature Electrical and Thermal Transport Behaviors of In2O3-based Ceramics by Zn-Sn Co-Substitution

Abid Ahmad,Muhammad Umer,Xing Tan,Rui Liu,Fidah Mohmad,Majid Hussain,Guang-Kun Ren,Yuan-Hua Lin

DOI: https://doi.org/10.1063/1.5026492

IF: 2.877

2018-01-01

Journal of Applied Physics

Abstract:We report remarkably the enhanced thermoelectric performance of Sn-Zn co-doped In2O3 that were synthesized by a solid-state reaction followed by spark plasma sintering in the mid-temperature range. The X-ray diffraction study indicates that Sn and Zn were successfully co-substituted at the In site without forming any additional phase even at 8% doping concentration. The co-substitution shows a significant increase in the electrical conductivity by band structure modification resulting in a significantly enhanced power factor. The point defect engineering combined with nanostructuring using a high energy ball milling suppressed the lattice thermal conductivity, which eventually resulted in an increased ZT value of 0.32 at 973 K, that is, about 7 times higher than that of pure In2O3. Thus, this study demonstrates the important role of co-substitution in improving the thermoelectric properties of n-type oxides.
Enhancing Near-Room-Temperature GeTe Thermoelectrics through In/Pb Co-doping

Juan Li,Qing Hu,Shan He,Xiaobo Tan,Qian Deng,Yan Zhong,Fujie Zhang,Ran Ang

DOI: https://doi.org/10.1021/acsami.1c11599

2021-07-28

Abstract:The traditional thermoelectric material GeTe has drawn much attention recently because of the reported high thermoelectric performance of the rhombohedral phase in low-temperature ranges, where the split L and Σ band can be reconverged to have a small energy offset and thus high density of state effective mass according to the rhombohedral angle. In addition, In doping in GeTe is also reported to enhance the density of effective mass and therefore increase the Seebeck coefficient because of the induced resonant levels. In this work, In and Pb are doped in GeTe, and In doping leads to an increase in the rhombohedral angle and thus enhanced density of state effective mass in addition to the resonant effect. However, the improved Seebeck coefficient result from In doping is compensated for by a sharp reduction of Hall mobility, leading to no significant enhancement of electronic performance in the rhombohedral phase. By further Pb/Ge doping in the matrix Ge0.95In0.05Te for the optimization of carrier concentration and reduction of lattice thermal conductivity (as low as 0.7 W/mK), a zT as high as ∼1.2 at 550 K and average zT of ∼0.75 between 300 and 550 K are realized in this work, demonstrating GeTe as a promising candidate for near-room-temperature application.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c11599.Temperature-dependent Hall mobility, thermoelectric properties of Ge1–xInxTe, temperature-dependent heat flow, XRD patterns and thermoelectric properties of Pb0.1Ge0.9–xInxTe, and Debye–Callaway model (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Structural modulation and resonant level enable high thermoelectric performance of GeTe in the mid-to-low temperature range

Guangjie Wu,Zhe Guo,Ruoyu Wang,Xiaojian Tan,Chen Cui,Peng Sun,Haoyang Hu,Jiehua Wu,Guoqiang Liu,Jun Jiang

DOI: https://doi.org/10.1039/d3ta04230h

IF: 11.9

2023-08-22

Journal of Materials Chemistry A

Abstract:GeTe has recently attracted wide attention as a promising mid-temperature thermoelectric candidate, but the poor performance severely limits its practical application. Herein, we demonstrate the significantly improved thermoelectric properties of Sb–InSe codoped GeTe by structural modulation and introducing a resonant level. It is revealed that both the phase transition at lower temperature driven by Sb doping and resonant level induced by InSe doping can increase the density of states effective mass, leading to an improved Seebeck coefficient and power factor over a wide temperature range. Additionally, the Sb–InSe codoping introduces various defects in the GeTe matrix and enhances the phonon scattering to obviously decrease the lattice thermal conductivity in the whole temperature range. With these synergistic effects, the (Ge 0.91 Sb 0.09 Te) 0.99 (InSe) 0.01 sample achieves a peak zT max of 2.1 at 773 K and a high zT avg of 1.61 between 400 and 773 K.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys via Introducing Cu 2 Te Nanocrystals and Resonant Level Doping

Qingtang Zhang,Zhuoyang Ti,Yuelei Zhu,Yongsheng Zhang,Yang Cao,Shuang Li,Meiyu Wang,Di Li,Bo Zou,Yunxiang Hou,Peng Wang,Guodong Tang

DOI: https://doi.org/10.1021/acsnano.1c05650

IF: 17.1

2021-11-04

ACS Nano

Abstract:The binary compound of GeTe emerging as a potential medium-temperature thermoelectric material has drawn a great deal of attention. Here, we achieve ultralow lattice thermal conductivity and high thermoelectric performance in In and a heavy content of Cu codoped GeTe thermoelectrics. In dopants improve the density of state near the surface of Femi of GeTe by introducing resonant levels, producing a sharp increase of the Seebeck coefficient. In and Cu codoping not only optimizes carrier concentration but also substantially increases carrier mobility to a high value of 87 cm2 V-1 s-1 due to the diminution of Ge vacancies. The enhanced Seebeck coefficient coupled with dramatically enhanced carrier mobility results in significant enhancement of PF in Ge1.04-x-yInxCuyTe series. Moreover, we introduce Cu2Te nanocrystals' secondary phase into GeTe by alloying a heavy content of Cu. Cu2Te nanocrystals and a high density of dislocations cause strong phonon scattering, significantly diminishing lattice thermal conductivity. The lattice thermal conductivity reduced as low as 0.31 W m-1 K-1 at 823 K, which is not only lower than the amorphous limit of GeTe but also competitive with those of thermoelectric materials with strong lattice anharmonicity or complex crystal structures. Consequently, a high ZT of 2.0 was achieved for Ge0.9In0.015Cu0.125Te by decoupling electron and phonon transport of GeTe. This work highlights the importance of phonon engineering in advancing high-performance GeTe thermoelectrics.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Decoupling Carrier-Phonon Scattering Boosts the Thermoelectric Performance of N-Type GeTe-Based Materials.

De-Zhuang Wang,Wei-Di Liu,Yuanqing Mao,Shuai Li,Liang-Cao Yin,Hao Wu,Meng Li,Yifeng Wang,Xiao-Lei Shi,Xiaoning Yang,Qingfeng Liu,Zhi-Gang Chen

DOI: https://doi.org/10.1021/jacs.3c12546

IF: 15

2024-01-01

Journal of the American Chemical Society

Abstract:The coupled relationship between carrier and phonon scattering severely limits the thermoelectric performance of n-type GeTe materials. Here, we provide an efficient strategy to enlarge grains and induce vacancy clusters for decoupling carrier-phonon scattering through the annealing optimization of n-type GeTe-based materials. Specifically, boundary migration is used to enlarge grains by optimizing the annealing time, while vacancy clusters are induced through the aggregation of Ge vacancies during annealing. Such enlarged grains can weaken carrier scattering, while vacancy clusters can strengthen phonon scattering, leading to decoupled carrier-phonon scattering. As a result, a ratio between carrier mobility and lattice thermal conductivity of ∼492.8 cm3 V-1 s-1 W-1 K and a peak ZT of ∼0.4 at 473 K are achieved in Ge0.67Pb0.13Bi0.2Te. This work reveals the critical roles of enlarged grains and induced vacancy clusters in decoupling carrier-phonon scattering and demonstrates the viability of fabricating high-performance n-type GeTe materials via annealing optimization.
Nano-inclusions: a novel approach to tune the thermal conductivity of In2O3.

Wei Xu,Yong Liu,Bo Chen,Da-Bo Liu,Yuan-Hua Lin,Augusto Marcelli

DOI: https://doi.org/10.1039/c3cp52942h

IF: 3.3

2013-01-01

Physical Chemistry Chemical Physics

Abstract:Indium oxides such as In2O3 based thermoelectric ceramics exhibit a figure of merit ZT similar to 0.5 above 1000 K, while optimized ZnO based thermoelectrics may reach ZT similar to 0.3 at 1273 K. A way to further optimize the thermoelectric performance is to tune the thermal conductivity. In this work, a reduction of the thermal conductivity greater than 30% has been observed. Combining thermal conductivity measurements, Scanning Electron Microscopy (SEM) images, X-ray Absorption Fine-structure spectroscopy (XAFS) data and Full Multiple Scattering calculations, we associated the phenomenon with an effective scattering of mid-and long-wavelength phonons by embedded ZnO nano-inclusions in the In2O3 matrix. The results suggest a protocol for the synthesis of new heat-designed materials for many novel applications, such as high ZT thermoelectrics, thermal crystals, heat optics devices, etc.
High Thermoelectric Performance of Nanostructured In2O3‐Based Ceramics

Jinle Lan,Yuan-Hua Lin,Yong Liu,Shaoliang Xu,Ce-Wen Nan

DOI: https://doi.org/10.1111/j.1551-2916.2012.05284.x

IF: 4.186

2012-01-01

Journal of the American Ceramic Society

Abstract:Nanostructured Zn and Ce co‐doped In2O3‐based ceramics were fabricated using co‐precipitation and Spark plasma sintering. It is shown that the nanograins in Zn and Ce co‐doped In2O3‐based ceramics can lead to 50% reduction in the thermal conductivity of the sample with a 50 nm grain size and meanwhile keep good electric conductivity. As a result, a reported high ZT value of 0.4 at 1050 K was achieved for n‐type oxide thermoelectrics. It is expected that the ZT value could reach 0.7 when the grain size is smaller than 20 nm. Our results indicate that nanosized grain is highly desired for reducing thermal conductivity and hence a higher ZT value in oxide thermoelectrics.
Enhanced Thermoelectric Performance in GeTe by Synergy of Midgap state and Band Convergence

Zhe Guo,Gang Wu,Xiaojian Tan,Ruoyu Wang,Zongwei Zhang,Guangjie Wu,Qiang Zhang,Jiehua Wu,Guo‐Qiang Liu,Jun Jiang

DOI: https://doi.org/10.1002/adfm.202212421

IF: 19

2023-01-01

Advanced Functional Materials

Abstract:It is revealed that the good coexistence of midgap state and band convergence in GeTe improves the thermoelectric performance over a very broad temperature range. Since the high md∗ is obtained and the κl is reduced, the thermoelectric performance of GeTe is significantly improved, leading to a high zTmax of 2.12 at 650 K and a greatly improved zTavg of 1.43 between 300 and 773 K. The good co‐existence of midgap state and valence band degeneracy is realized in Bi‐alloyed GeTe through the In‐Cd codoping to play different but complementary roles in the valence band structure modification. In doping induces midgap state and results in a considerably improved Seebeck coefficient near room temperature, while Cd doping significantly increases the Seebeck coefficient in the mid‐high temperature region by promoting the valence band convergence. The synergistic effects obviously increase the density of state effective mass from 1.39 to 2.65 m0, and the corresponding carrier mobility still reaches 34.3 cm2 V−1 s−1 at room temperature. Moreover, the Bi‐In‐Cd co‐alloying introduces various phonon scattering centers including nanoprecipitates and strain field fluctuations and suppresses the lattice thermal conductivity to a rather low value of 0.56 W m−1 K−1 at 600 K. As a result, the Ge0.89Bi0.06In0.01Cd0.04Te sample obtains excellent thermoelectric properties of zTmax ≈2.12 at 650 K and zTavg ≈1.43 between 300 and 773 K. This study illustrates that the thermoelectric performance of GeTe can be optimized in a wide temperature range through the synergy of midgap state and valence band convergence.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Effect of transition-metal cobalt doping on the thermoelectric performance of In2O3 ceramics

Yong Liu,Yuan Lin,Jinle Lan,Wei Xü,Boping Zhang,Cewen Nan,Hongmin Zhu

DOI: https://doi.org/10.1111/j.1551-2916.2010.03904.x

IF: 4.186

2010-01-01

Journal of the American Ceramic Society

Abstract:The polycrystalline In2O3 ceramics doped with cobalt were prepared through the spark plasma sintering (SPS) process. Both thermoelectric transport properties and microstructure of the ceramics were investigated. The Co-doped In2O3 by SPS had a remarkable effect on the transport properties. Large electrical conductivity and thermopower was observed in dilute Co-doped sample. The maximum power factor were found in In1.98Co0.02O3 sample as 4.6 x 10-4 W center dot(m center dot K2)-1 at 1073 K with the ZT value up to 0.26.
Simultaneously Enhanced Power Factor and Phonon Scattering in Bi0.4Sb1.6Te3 Alloy Doped with Germanium

Y. S. Wang,L. L. Huang,C. Zhu,J. Zhang,D. Li,H. X. Xin,M. H. Danish,X. Y. Qin

DOI: https://doi.org/10.1016/j.scriptamat.2018.05.026

IF: 6.302

2018-01-01

Scripta Materialia

Abstract:The thermoelectric properties of Ge-doped Bi0.4Sb1.6-xGexTe3 (x = 0, 0.01, 0.015, 0.02) were investigated in the temperature range from 300 K to 525 K. The results show that Ge doping brings about 13-52% increase in electrical conductivity due to the increase of hole concentration, and 5-11% decrease in thermal conductivity owing to enhanced phonon scattering by the dopant atoms. As a result, a maximum thermoelectric figure of merit (ZT) reaches 1.48 at 350 K for Bi0.4Sb1.59Ge0.01Te3, which is similar to 25% larger than that of Bi0.4Sb1.6Te3. Present results demonstrate that Ge doping is an effective way to enhance the thermoelectric performance of Bi0.4Sb1.6Te3 alloy. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Strong Phonon-Phonon Interactions Securing Extraordinary Thermoelectric Ge 1- x Sb x Te with Zn-Alloying-Induced Band Alignment.

Min Hong,Yuan Wang,Tianli Feng,Qiang Sun,Shengduo Xu,Syo Matsumura,Sokrates T Pantelides,Jin Zou,Zhi-Gang Chen

DOI: https://doi.org/10.1021/jacs.8b12624

IF: 15

2019-01-01

Journal of the American Chemical Society

Abstract:The ability of substitution atoms to decrease thermal conductivity is usually ascribed to the enhanced phonon-impurity scattering by assuming the original phonon dispersion relations. In this study, we find that 10% Sb-Ge alloying in GeTe modifies the phonon dispersions significantly, closes the acoustic optical phonon band gap, increases the phonon-phonon-scattering rates, and reduces the phonon group velocities. These changes, together with grain boundaries, nanoprecipitates, and planar vacancies, lead to a significant decrease in the lattice thermal conductivity. In addition, an extra 2-6% Zn alloying decreases the energy offset between valence band edges at L and E points in Ge1-xSbx Te that is found to be induced by the Ge 4S(2) lone pairs. Since Zn is free of s(2) lone pair electrons, substituting Ge with Zn atoms can consequently diminish the Ge 4s(2) lone-pair characters and reduce the energy offset, resulting in two energetically merged valence band maxima. The refined band structures render a power factor up to 40 mu W cm(-1) K-2 in Ge0.86Sb0.1Zn0.04Te. Ultimately, a superhigh zT of 2.2 is achieved. This study clarifies the impacts of high-concentration substitutional atoms on phonon band structure, phonon phonon scattering rates, and the convergence of electron valence band edges, which could provide guidelines for developing high-performance thermoelectric materials.

Enhanced Thermoelectric Properties of Ga-Doped In2o3 Ceramics Via Synergistic Band Gap Engineering and Phonon Suppression

Enhanced Thermoelectric Performance of In2O3-based Ceramics Via Nanostructuring and Point Defect Engineering.

Thermoelectric Performance of Zn and GeCo-Doped In2O3 Fine-Grained Ceramics by the Spark Plasma Sintering

Thermoelectric Performance Enhancement of Vanadium Doped N-Type In2O3 Ceramics Via Carrier Engineering and Phonon Suppression

In-doping induced resonant level and thermoelectric performance enhancement in n-type GeBi 2 Te 4 single crystals with intrinsically low lattice thermal conductivity

Thermoelectric Performance of Zn and Ge Co-Doped In2o3 Fine-Grained Ceramics by the Spark Plasma Sintering

Realizing High Thermoelectric Performance in GeTe‐Based Supersaturated Solid Solutions

Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys Via Introducing Cu2Te Nanocrystals and Resonant Level Doping.

Thermoelectric Performance of Zn and Nd Co-Doped In2o3 Ceramics

Synergetic Optimization via Indium and Rare Metal Yttrium Co-doping in GeTe Results in High Power Factor and Excellent Thermal Performance

High-temperature Electrical and Thermal Transport Behaviors of In2O3-based Ceramics by Zn-Sn Co-Substitution

Enhancing Near-Room-Temperature GeTe Thermoelectrics through In/Pb Co-doping

Structural modulation and resonant level enable high thermoelectric performance of GeTe in the mid-to-low temperature range

Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys via Introducing Cu 2 Te Nanocrystals and Resonant Level Doping

Decoupling Carrier-Phonon Scattering Boosts the Thermoelectric Performance of N-Type GeTe-Based Materials.

Nano-inclusions: a novel approach to tune the thermal conductivity of In2O3.

High Thermoelectric Performance of Nanostructured In2O3‐Based Ceramics

Enhanced Thermoelectric Performance in GeTe by Synergy of Midgap state and Band Convergence

Effect of transition-metal cobalt doping on the thermoelectric performance of In2O3 ceramics

Simultaneously Enhanced Power Factor and Phonon Scattering in Bi0.4Sb1.6Te3 Alloy Doped with Germanium

Strong Phonon-Phonon Interactions Securing Extraordinary Thermoelectric Ge 1- x Sb x Te with Zn-Alloying-Induced Band Alignment.