Optoelectronic properties and strain regulation of the 2D WS 2 /ZnO van der Waals heterostructure

Yujun Guan,Hui Yao,Huahan Zhan,Hao Wang,Yinghui Zhou,Junyong Kang

DOI: https://doi.org/10.1039/d1ra01877a

IF: 4.036

2021-01-01

RSC Advances

Abstract:2D WS 2 /ZnO vdWs heterostructure becomes a good material for water-splitting applications after a strain is applied.

chemistry, multidisciplinary

What problem does this paper attempt to address?

A van der Waals pn heterojunction with organic/inorganic semiconductors

Daowei He,Yiming Pan,Haiyan Nan,Shuai Gu,Ziyi Yang,Bing Wu,Xiaoguang Luo,Bingchen Xu,Yuhan Zhang,Yun Li,Zhenhua Ni,Baigeng Wang,Jia Zhu,Yang Chai,Yi Shi,Xinran Wang

DOI: https://doi.org/10.48550/arXiv.1511.02361

2015-11-07

Abstract:van der Waals (vdW) heterojunctions formed by two-dimensional (2D) materials have attracted tremendous attention due to their excellent electrical/optical properties and device applications. However, current 2D heterojunctions are largely limited to atomic crystals, and hybrid organic/inorganic structures are rarely explored. Here, we fabricate hybrid 2D heterostructures with p-type dioctylbenzothienobenzothiophene (C8-BTBT) and n-type MoS2. We find that few-layer C8-BTBT molecular crystals can be grown on monolayer MoS2 by vdW epitaxy, with pristine interface and controllable thickness down to monolayer. The operation of the C8-BTBT/MoS2 vertical heterojunction devices is highly tunable by bias and gate voltages between three different regimes: interfacial recombination, tunneling and blocking. The pn junction shows diode-like behavior with rectifying ratio up to 105 at the room temperature. Our devices also exhibit photovoltaic responses with power conversion efficiency of 0.31% and photoresponsivity of 22mA/W. With wide material combinations, such hybrid 2D structures will offer possibilities for opto-electronic devices that are not possible from individual constituents.

Mesoscale and Nanoscale Physics,Materials Science
The Electronic and Optical Properties of PC6/WS2 Heterostructure Modulated Via Biaxial Strain and External Electric Field

Peiyuan Du,Yuhong Huang,Jingnan Wang,Gangqiang Zhu,Fei Ma,Jianmin Zhang,Xiumei Wei,Pengfei Hou,Jala Bib Khan

DOI: https://doi.org/10.1016/j.surfin.2021.101100

IF: 6.2

2021-01-01

Surfaces and Interfaces

Abstract:The significant electronic and optical properties of strain and external electric field modulated PC6/WS2 heterostructures are systematically explored by density functional theory (DFT) calculation. The stablest type B configuration of the heterostructure has Z-scheme mechanism with an indirect band gap of 0.93 eV and can conduct the overall water splitting. The absorption of the heterostructure is obviously enhanced in most of the visible light range compared with the constituent monolayers. The -8% similar to 8% biaxial strains can effectively adjust the band gaps and induce the band type transition of PC6/WS2 heterostructure from semiconductor (type II -> I -> II) to metal at the turning points of -4.43%, -1.15% and 4.71%, respectively. The tensile strains can increase the interfacial charge transfer, the dielectric constant epsilon(omega) and light absorption in the low energy range with respect to the compressive strains. The external electric fields (-0.80 similar to 0.80 V/angstrom) can also adjust the band alignments and band gaps, however, they cause the band type transition from metal to semiconductor (type II -> I -> II) at the turning points of -0.80, 0.08 and 0.60 V/angstrom, respectively. The interfacial charge transfer can be enhanced with the increasing of the positive and decreasing of the negative electric fields, whereas the epsilon(omega) is slightly affected and the light absorption is even adversely impacted by the electric fields. The conclusions could provide the theoretical guide for the potential application of PC6/WS2 heterostructure in the multifunctional optoelectronic devices.
Anisotropic strain effect on structural and electronic properties in WSe2/ZnO mixed-dimensional heterostructure

Xinxin Wang,Wenyu Shi,Jun Wu,Jianguo Wan

DOI: https://doi.org/10.1016/j.apsusc.2021.149378

IF: 6.7

2021-06-01

Applied Surface Science

Abstract:Mixed-heterostructures have received much attention due to their broader application in functional devices. Here, we investigate the strain effect on structural and electronic properties of 2D WSe2/1D ZnO nanoribbon (WSe2/ZnO-NR) mixed-dimensional heterostructure including the armchair ZnO nanoribbon (a-ZnO-NR) and zigzag ZnO nanoribbon (z-ZnO-NR) on WSe2 layer by using the first principles calculation. The results show that the binding strength of WSe2/ZnO-NR is enhanced. Remarkably, the WSe2/ZnO-NR presents anisotropic electronic properties under strain effect. Firstly, whether the WSe2/a-ZnO-NR is passivated by hydrogens or not, they always show type-I direct band gap alignment. After the strain applied, the band structures are transformed into type-II band alignment, promoting the separation of photogenerated electron-hole pairs. For WSe2/z-ZnO-NR, it exhibits type-II band alignment. The strain engineering can effectively modulate the band gap of WSe2/z-ZnO-NR. When the edge of z-ZnO-NR is not passivatied, the WSe2/z-ZnO-NR shows spin polarized band structure with a narrow gap. The band gap and spin polarization can be tuned by strain. The projected band structures reveal that the WSe2/z-ZnO-NR not only forms type-II band alignment, but also realizes the separation of different spin states. This work provides useful guide for designing photoelectronic devices experimentally.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Optical and tunable electronic properties of doped PtS2/ZrS2 Van Der Waals heterostructure under the effect of strain and electric field

Linshen Ye,Lijun Luan,Rui Guo,Yan Zhang,Xing Wei,Jibing Fan,Lei Ni,Chen Liu,Yun Yang,Jian Liu,Ye Tian,Li Duan

DOI: https://doi.org/10.1016/j.mssp.2023.107615

IF: 4.1

2023-09-01

Materials Science in Semiconductor Processing

Abstract:The unique properties of van der Waals Heterostructure (vdwH) composed of two different monolayers also make it a research hotspot. The compatible electronic and optical properties of doped PtS2/ZrS2 vdwH under an applied electric field and strain have been carefully studied using first-principles calculations. The results show that PtS2/ZrS2 vdwH has a typical Type-II band alignment and an indirect band gap of 0.76 eV. Different doping positions will cause the band gap of the heterojunction to decrease to varying degrees. By adjusting the interlayer spacing or applying external electric field and strain, the band gap value of PtS2/ZrS2 vdwH can be observed to change regularly. It is worth mentioning that when the applied electric field strength reaches 0.9 V/Å and the biaxial strain reaches −7%, the heterostructure becomes metal. ASnd the doped PtS2/ZrS2 vdwH will change from indirect band gap to direct band gap under both positive electric field and biaxial strain. In addition, PtS2/ZrS2 vdwH exhibits better light absorption performance in the ultraviolet region than the single layer, and doping will enhance the light absorption capacity of the heterostructure in the visible region, which indicates that the new two-dimensional PtS2/ZrS2 vdwH will become a powerful candidate for optoelectronic materials and UV detectors.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Construction of 2D Lateral Pseudoheterostructures by Strain Engineering

Haifeng Feng,Jincheng Zhuang,Ashley D. Slattery,Liang Wang,Zhongfei Xu,Xun Xu,David Mitchell,Tian Zheng,Songlin Li,Michael Higgins,Long Ren,Ziqi Sun,Shi Xue Dou,Yi Du,Weichang Hao

DOI: https://doi.org/10.1088/2053-1583/aa7100

IF: 6.861

2017-01-01

2D Materials

Abstract:Two-dimensional (2D) lateral heterostructures host unconventional physical properties due to their controllable band-offset tuning and interfacial sensitive characteristic. The lattice mismatch results in the difficulties to construct the perfect atomic interface in such 2D lateral heterostructures, which in turn limits their desirable properties and performances in applications. In this work, strain-modulated 2D lateral pseudoheterogeneous structures are designed and realized in the single-component 2D BiOBr nanosheets by taking advantage of their strain-sensitive crystal and electronic structures. The pseudoheterogeneous interface without atomic mismatch can be feasibly modulated by local strain distribution, which exhibits similar local electronic band structure of corresponding heterostructures. Significant enhancement in charge separation at the pseudoheterostructure was demonstrated under visible light irradiation, which is given rise to the controllable electronic band alignment across the interface. The construction of the lateral pseudoheterostructure offers a feasible and promising way to build unprecedented 2D systems with exciting properties.
Tunable electronic and optical properties of the WS 2 /IGZO heterostructure via an external electric field and strain: a theoretical study.

Hongyu Tang,Chunjian Tan,Huiru Yang,Kai Zheng,Yutao Li,Huaiyu Ye,Xianping Chen,Xuejun Fan,Tianling Ren,Guoqi Zhang

DOI: https://doi.org/10.1039/c9cp02084e

IF: 3.3

2019-01-01

Physical Chemistry Chemical Physics

Abstract:In this study, the structural, electronic and optical properties of a tungsten disulfide (WS2) hybrid with indium-gallium-zinc-oxide (IGZO) heterostructures were investigated based on density functional theory (DFT) calculations. According to the results of binding energy, charge density difference and electron localization function of heterostructures, we found that the WS2 and IGZO monolayers were bound to each other via non-covalent interactions with large binding energy. The calculated results illustrate that the AAii stacking pattern has an indirect band gap of 1.643 eV, while AAi and AB stacking patterns have maximum direct-gaps of 1.102 eV and 1.234 eV, respectively. Under an external E-field and mechanical strain, the response of the energy gap of the WS2/IGZO heterostructure monotonically decreased over a wide range, even with a semiconductor-metal transition. In addition, we investigated the optical properties of the heterostructure and found that it exhibits a much broad spectral responsivity (from visible light to deep UV light) and a more pronounced optical absorption than WS2 and IGZO monolayers. Moreover, the tensile strain could weaken the photoresponse of the heterostructure to the UV light and enhance the response for the visible light; under compressive strain, the heterostructure showed a strong absorption peak in the UV light. Meanwhile, a red-shift was observed under an external strain. All these unique and tunable properties indicate that the WS2/IGZO heterostructure is a good candidate for nanoelectronic and photoelectronic devices, such as field-effect transistors, flexible sensors, photo-detectors and photonic devices.
Strain-tunable electronic and optical properties of Zr2CO2 MXene and MoSe2 van der Waals heterojunction: A first principles calculation

Xiao-Hong Li,Xing-Hao Cui,Cai-Hong Xing,Hong-Ling Cui,Rui-Zhou Zhang

DOI: https://doi.org/10.1016/j.apsusc.2021.149249

IF: 6.7

2021-05-01

Applied Surface Science

Abstract:Zr2CO2/MoS2 heterostructure has attracted intensive attention because of its remarkable electronic and optoelectronic properties. In this paper, the van der Waals (vdW) heterostructures are constructed by stacking MoSe2 on top of Zr2CO2 MXene. The most stable stacking configuration is confirmed. Zr2CO2 and MoSe2 monolayers can form type II heterostructure, and the interfacial electronic states coupling between Zr2CO2 and MoSe2 is responsible for gap states. The effect of strain on the electronic structure and optical properties of Zr2CO2/MoS2 heterostructure is investigated theoretically. The manner in which the strain modulates the band structure of Zr2CO2/MoS2 heterostructure, including band gap, total/partial density of state, charge transfer is reported. The compressive and tensile strains can all result in the metallization of Zr2CO2/MoSe2 heterostructure. The increasing amount of charge redistribution results in the transition from semiconductor to metal with the increasing compressive and tensile strain. The photocatalytic efficiency of Zr2CO2/MoSe2 heterostructure is generally enhanced under strain. The effect of strain on optical properties is further explored.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Strain regulated interlayer coupling in WSe 2 /WS 2 heterobilayer

Xiaodan Xu,Cong Wang,Wenqi Xiong,Yang Liu,Donghao Yang,Xinzheng Zhang,Jingjun Xu

DOI: https://doi.org/10.1088/1361-6528/ac3a39

IF: 3.5

2021-12-03

Nanotechnology

Abstract:Abstract Strain engineering can effectively modify the materials lattice parameters at atomic scale, hence it has become an efficient method for tuning the physical properties of two-dimensional (2D) materials. The study of the strain regulated interlayer coupling is deserved for different kinds of heterostructures. Here, we systematically studied the strain engineering of WSe 2 /WS 2 heterostructures as well as their constituent monolayers. The measured Raman and photoluminescence spectra demonstrate that the strain can evidently modulate the phonon energy and exciton emission of monolayer WSe 2 and WS 2 as well as the WSe 2 /WS 2 heterostructures. The tensile strain can tune the electronic band structure of WSe 2 /WS 2 heterostructure, as well as enhance the interlayer coupling. It is further revealed that the photoluminescence intensity ratio of WS 2 to WSe 2 in our WSe 2 /WS 2 heterobilayer increases monotonically with tensile strain. These findings can broaden the understanding and practical application of strain engineering in 2D materials with nanometer-scale resolution.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Strain engineering of type-II C 2 N/WS 2 van der Waals heterojunction for highly enhanced photocatalytic hydrogen evolution

Quan Li,Cong Pan,Hao Huang,Ling-Ling Wang,Xiaojun Zhu

DOI: https://doi.org/10.1016/j.ijhydene.2023.03.158

IF: 7.2

2023-04-10

International Journal of Hydrogen Energy

Abstract:The first-principles calculations demonstrate that the photocatalytic performance of type-II C 2 N/WS 2 van der Waals heterobilayer can be improved to a new and high level by applying weak biaxial strain, with desired band structure, tunable interface charge transfer, superior visible-light absorption, and ideal hydrogen evolution reaction (HER) activity. Tensile strains can largely reduce the energy gap, strengthen the interfacial interactions, and promote the visible-light absorption of C 2 N/WS 2 heterostructure, and even induce a direct band gap of 1.70 eV for overall water splitting at 2% strain. Compressive strains like −2% can upshift the valence band and conduction band positions of the C 2 N/WS 2 bilayer to acquire outstanding redox abilities, and enhance the interface charge transfer and separation by increasing the electrostatic potential drop. More importantly, the cycle between spontaneous H∗ adsorption and energetically favorable H 2 release may be realized by dynamic strains between ±2%, maximizing the HER activities of C 2 N/WS 2 heterostructure.

energy & fuels,electrochemistry,chemistry, physical
Strain engineering for C2N/Janus monochalcogenides van der Waals heterostructures: Potential applications for photocatalytic water splitting

Zhuang Ma,Sanjun Wang,Chong Li,Fei Wang

DOI: https://doi.org/10.1016/j.apsusc.2020.147845

IF: 6.7

2021-01-01

Applied Surface Science

Abstract:A type-II van der Waals (vdW) heterostructure that can inhibit carrier recombination and improve the photocatalytic efficiency of water splitting has received much attention for photocatalytic water splitting. In this work, two-dimensional Janus monochalcogenides, In2SSe(In2STe, In2SeTe) and C2N, are designed to type-II vdW heterostructures for photocatalytic water splitting. First-principles calculation results show that C2N/In2SSe and C2N/In2STe heterostructures have a type-I band alignment, and that C2N/In2SeTe have a unique type-II band alignment. Under biaxial strain, both C2N/In2SSe and C2N/In2STe heterostructures can have a type-I to type-II band alignment and an indirect-direct band-gap transition. Systematically electronic structure and band alignment results show that C2N/In2SSe and C2N/In2SeTe vdW heterostructures are more suitable for photocatalytic water splitting under strain than C2N/In2STe heterostructure. In addition, the optical absorption of C2N/In2SSe and C2N/In2SeTe vdW heterostructures can be significantly improved under biaxial strain. Detailed strain engineering results show that C2N is more sensitive to strain than Janus monochalcogenides due to the planar properties of sp2 hybrization of C2N, which dominate the band gap and band transition in heterostructures under strain. These results indicate that C2N/In2SSe and C2N/In2SeTe vdW heterostructures can be used as photocatalytic water splitting materials, providing a motivation for further research on Janus heterostructures.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Two Dimensional WS2 Lateral Heterojunctions by Strain Modulation

Lan Meng,Yuhan Zhang,Song Hu,Xiangfu Wang,Chunsheng Liu,Yandong Guo,Xinran Wang,Xiaohong Yan

DOI: https://doi.org/10.1063/1.4954991

IF: 4

2016-01-01

Applied Physics Letters

Abstract:“Strain engineering” has been widely used to tailor the physical properties of layered materials, like graphene, black phosphorus, and transition-metal dichalcogenides. Here, we exploit thermal strain engineering to construct two dimensional (2D) WS2 in-plane heterojunctions. Kelvin probe force microscopy is used to investigate the surface potentials and work functions of few-layer WS2 flakes, which are grown on SiO2/Si substrates by chemical vapor deposition, followed by a fast cooling process. In the interior regions of strained WS2 flakes, work functions are found to be much larger than that of the unstrained regions. The difference in work functions, together with the variation of band gaps, endows the formation of heterojunctions in the boundaries between inner and outer domains of WS2 flakes. This result reveals that the existence of strain offers a unique opportunity to modulate the electronic properties of 2D materials and construct 2D lateral heterojunctions.
Pristine Interlayer Coupling for Strain Engineering of WS2/WSe2 Nanosheet-Based Van Der Waals Heterostructures

Yabing Shan,Xiaofei Yue,Jiajun Chen,Borgea G. M. Ekoya,Jinkun Han,Laigui Hu,Ran Liu,Zhi-Jun Qiu,Chunxiao Cong

DOI: https://doi.org/10.1021/acsanm.2c03966

IF: 6.14

2022-01-01

ACS Applied Nano Materials

Abstract:Two-dimensional (2D) van der Waals heterostructures (vdw-HSs) have attracted extensive attention as a versatile platform for exploring fundamental physics and potential applications in nanoelectronics and optoelectronics in view of the different band alignments and the unique interlayer couplings. In particular, strain engineering has become an effective approach to modulate the electronic structures and interlayer coupling of nanosheet-based vdw-HSs. However, there are very few works that concern the effect of the pristine coupling strength of the HSs on the process of strain engineering. Here, we demonstrate a comprehensive investigation of the strain engineering on the nanoscale for a bilayer WS2/WSe2 vertical HS containing certain regions with different coupling strengths through Raman and photoluminescence spectroscopy. We compare the responses of intralayer excitons to tensile strain between the HSs and their constituent monolayers. The obtained results demonstrate that the original coupling strength of the HS can significantly affect the electronic band structure evolution under the same strain which mainly depends on whether the coupling strength of the HS is further enhanced during the strain process. Meanwhile, we also pay attention to the evolution of interlayer excitons at different coupling regions under tensile strain. A direct-to-indirect transition process for interlayer exciton is observed at the weak-coupling region of the HS but lost at the strong-coupling region, which further confirms that the strain engineering of the HS can be impacted by its original coupling levels. Our findings provide an intensive understanding of the strain engineering of the nanosheet-based vdwHSs and broaden the technological innovation of nanodevices, such as flexible photodetectors and exciton-emitting devices.
Electric field and strain engineering tuning of 2D Gr/α-Ga2O3 van der Waals heterostructures

Xiangyu Wu,Zhiyang Xie,Yu Zhang,Xuefei Liu,Jinshun Bi,Wentao Wang,Zhaofu Zhang,Ruyue Cao

DOI: https://doi.org/10.1039/d3tc02841k

IF: 6.4

2023-09-28

Journal of Materials Chemistry C

Abstract:Functional electrical devices based on two-dimensional (2D) materials can benefit from the considerable potential of van der Waals heterostructures (vdWHs). We investigated the electrical characteristics, contact behavior, and optical performance of 2D metal-semiconductor vdWHs comprised of graphene and α-Ga 2 O 3 , in which α-Ga 2 O 3 possesses two polarization states that are diametrically opposed to one another (α-Ga 2 O 3 ↑ and α-Ga 2 O 3 ↓). Utilizing first-principles calculations, Gr/α-Ga 2 O 3 ↑ vdWHs have n-type Schottky contacts, while Gr/α-Ga 2 O 3 ↓ vdWHs have n-type Ohmic contacts. Applying strains and electric fields efficiently regulates the band alignment between these two substances, which can reach different contact types. Moreover, our research findings suggest that vertical strains and electric fields can boost the carrier concentration in the Gr layer to about ∼10 13 cm −2 . Besides, the Gr/α-Ga 2 O 3 vdWHs have much higher optical absorption than the isolated α-Ga 2 O 3 monolayers in the visible and UV spectral regions. Consequently, the fact that Gr/α-Ga 2 O 3 vdWHs are capable of attaining controlled contact types makes them especially well-suited for use in applications involving electrical and optoelectronic devices.

materials science, multidisciplinary,physics, applied
Strain-Tunable Band Alignment And Band Gap Of Gase/Wte2 Heterojunction For Water Splitting And Light-Emitting

Qingyi Feng,Hongxiang Deng,Hongdong Yang,Shasha Ke,Haifeng Lv,Li Li,Xiaotao Zu

DOI: https://doi.org/10.1016/j.rinp.2021.104605

IF: 4.565

2021-01-01

Results in Physics

Abstract:Van der Waals heterojunctions (vdWHs) based on transition metal dichalcogenides (TMDs) attract much attention due to their unique electrochemical and physical properties. However, most vdWHs in TMD family are type II with indirect band gap. For vdWHs in TMD family, it is difficult to obtain the direct band gap through band arrangement approaches, limiting their applications in optoelectronics and photocatalysis. In present work, a type-I GaSe/WTe2 heterojunction with direct band gap (1.13 eV) is found by first-principles calculations. We find that this heterojunction has dipole allowed direct band gap transition and large band offsets, which are beneficial to light emission efficiency. The effects of strain on electronic structure and optical properties of GaSe/WTe2 heterojunction are investigated. We find that band gap of type-I GaSe/WTe2 heterojunction can be tuned in large range by strain and it is a promising platform to develop strain-tunable light-emitting device which can emit various wavelengths. The band alignment type of GaSe/WTe2 heterojunction can be tuned from type-I to type-II by strain. Our results show that, in type-II alignment, it has efficient photocatalytic activity in water splitting and the photocatalytic efficiency can be enhanced by strain. We hope our work can make a contribution to exploring a strain-tuned platform for photocatalytic and light-emitting devices.
Continuously tunable uniaxial strain control of van der Waals heterostructure devices

Zhaoyu Liu,Xuetao Ma,John Cenker,Jiaqi Cai,Zaiyao Fei,Paul Malinowski,Joshua Mutch,Yuzhou Zhao,Kyle Hwangbo,Zhong Lin,Arnab Manna,Jihui Yang,David Cobden,Xiaodong Xu,Matthew Yankowitz,Jiun-Haw Chu

2024-05-24

Abstract:Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optical characterization and extremely simple electrical device geometries. Here, we report a piezoelectric-based \textit{in situ} uniaxial strain technique enabling simultaneous electrical transport and optical spectroscopy characterization of dual-gated vdW heterostructure devices. Critically, our technique remains compatible with vdW heterostructure devices of arbitrary complexity fabricated on conventional silicon/silicon dioxide wafer substrates. We demonstrate a large and continuously tunable strain of up to $-0.15\%$ at millikelvin temperatures, with larger strain values also likely achievable. We quantify the strain transmission from the silicon wafer to the vdW heterostructure, and further demonstrate the ability of strain to modify the electronic properties of twisted bilayer graphene. Our technique provides a highly versatile new method for exploring the effect of uniaxial strain on both the electrical and optical properties of vdW heterostructures, and can be easily extended to include additional characterization techniques.

Instrumentation and Detectors,Mesoscale and Nanoscale Physics,Other Condensed Matter
The adjustable electronic and photoelectric properties of the WS2/WSe2 and WSe2/WTe2 van der Waals heterostructures

Kangwei Cen,Shenlang Yan,Ning Yang,Xiansheng Dong,Luzhen Xie,Mengqiu Long,Tong Chen

DOI: https://doi.org/10.1016/j.vacuum.2023.112020

IF: 4

2023-06-01

Vacuum

Abstract:The two-dimensional (2D) transition metal dichalcogenides (TMDs) have interesting physical properties and potential applications in the field of electronics and nanophotonics. The structure, electronic, optical and photoelectric properties of WX2 (X = S, Se, Te) monolayer and their heterostructures are studied by the first principles calculation. The results show that the six different stacked structures of the WS2/WSe2 and WSe2/WTe2 heterostructures have very small and negligible effects on their electronic properties. The electronic properties of the WS2/WSe2 and WSe2/WTe2 heterostructures can be effectively regulated by biaxial strain, such as the transition from the direct bandgap semiconductor to the indirect band gap and then to the metallic property. The WS2/WSe2 and WSe2/WTe2 heterostructures are type-II band alignments, which are suitable for optoelectronic applications. Moreover, both tensile strain and compressive strain can effectively regulate the optical properties of WS2/WSe2 heterostructure, such as the peak and range of optical absorption coefficient. These good optical properties are conducive to the application of the WS2/WSe2 heterostructures in optoelectronic devices. Therefore, the photoelectric characteristics of three kinds of photoelectric devices for zigzag and armchair types (Z-type and A-type) based on the WS2/WSe2 heterostructures are studied, named PIN-junction, PIP-junction and NIN-junction photoelectric devices. The WS2/WSe2 heterostructure shows high anisotropy in the optoelectronic properties in the Z-type and A-type directions. The photoelectric properties of the A-type WS2/WSe2 heterostructure are better than those of the Z-type. The A-type WS2/WSe2 heterostructure has a higher photocurrent density under the AM1.5 standard. Our results suggest that the WS2/WSe2 and WSe2/WTe2 heterostructures are possible to make photodetector, and the strain can regulate the electronic and optical properties of the heterostructures, which have potential applications in photoelectric and other fields.

materials science, multidisciplinary,physics, applied
Electric fields and strains effect on the electronic and optical properties of Zr2CO2/MoSSe van der Waals heterostructure

Fangfang Zhuang,Guoqiang Hao,Rui Zhou,Weilong Lei,Yilin Deng,Xiaojun Ye,Hongbo Li,Rui Zhang

DOI: https://doi.org/10.1016/j.mtcomm.2022.104295

IF: 3.8

2022-12-01

Materials Today Communications

Abstract:For emerging two-dimension materials, transition-metal dichalcogenides and MXenes have arrested massive attractiveness of investigators. They are diffusely applied in photocatalytic water splitting, photodetector and capacitor on account of their attractive electronic and physical properties. To explore characteristics of MXene/Janus MXY heterostructures, Zr2CO2/MoSSe heterostructures are systematically investigated which employed the first-principles calculations. The results of band structure, density of states and band edge diagram illustrate that the Zr2CO2/MoSSe (Se atoms in the interface) heterostructure is an indirect band gap semiconductor (0.85 eV) and exhibits type II band arrangement which can separate carriers effectively. Comparison with individual Zr2CO2 and MoSSe, the formation of heterostructure can procure higher-intensity and wider-range optical absorption. In addition, the formation of Zr2CO2/MoSSe heterostructure implements high electron and hole mobilities along zigzag direction up to 2526.86 cm2V−1s−1 and 1462.51 cm2V−1s−1, respectively, which is remarkably profitable for upgrading its photocatalytic efficiency. To further comprehensively acquaint Zr2CO2/MoSSe heterostructure, various strains and electric fields are applied to modify its electrical and optical performance. Biaxial strains demand to maintain within − 6–2%, while electric fields require to sustain under positive electric fields. In consequence, the Zr2CO2/MoSSe van der Waals heterostructures conceive prosperous potential to be adopted in high-performance photocatalysts.

materials science, multidisciplinary
The First-Principles Study of External Strain Tuning the Electronic and Optical Properties of the 2D MoTe2/PtS2 van der Waals Heterostructure

Li Zhang,Kai Ren,Haiyan Cheng,Zhen Cui,Jianping Li

DOI: https://doi.org/10.3389/fchem.2022.934048

IF: 5.5

2022-07-25

Frontiers in Chemistry

Abstract:Two-dimensional van der Waals (vdW) heterostructures reveal novel properties due to their unique interface, which have attracted extensive focus. In this work, the first-principles methods are explored to investigate the electronic and the optical abilities of the heterostructure constructed by monolayered MoTe 2 and PtS 2 . Then, the external biaxial strain is employed on the MoTe 2 /PtS 2 heterostructure, which can persist in the intrinsic type-II band structure and decrease the bandgap. In particular, the MoTe 2 /PtS 2 vdW heterostructure exhibits a suitable band edge energy for the redox reaction for water splitting at pH 0, while it is also desirable for that at pH 7 under decent compressive stress. More importantly, the MoTe 2 /PtS 2 vdW heterostructure shows a classy solar-to-hydrogen efficiency, and the light absorption properties can further be enhanced by the strain. Our results showed an effective theoretical strategy to tune the electronic and optical performances of the 2D heterostructure, which can be used in energy conversion such as the automotive battery system.

chemistry, multidisciplinary
Gradient‐Strained Van Der Waals Heterojunctions for High‐Efficient Photodetectors

Haoran Zeng,Huihui Yu,Baishan Liu,Shucao Lu,Xiaofu Wei,Li Gao,Mengyu Hong,Xiankun Zhang,Zheng Zhang,Yue Zhang

DOI: https://doi.org/10.1002/adfm.202400712

IF: 19

2024-03-21

Advanced Functional Materials

Abstract:A gradient‐strained van der Waals (vdWs) heterojunction based on ZnO/WSe2/graphene is constructed by controlling the height of ZnO nanorods. Impressively, as the strain increases by 2.7%, the external quantum efficiency of the heterojunction triples. This confirms that strain can effectively modulate the behavior of carriers, which provides a new direction for the design of next‐generation vdWs heterojunction photodetectors. Maximizing light‐to‐electricity conversion efficiency is a crucial challenge for the practical applications of 2D material photodetectors. However, due to the lack of stable and precise electronic structure control methods for 2D materials, the driving force of photogenerated carriers is insufficient that severely hinders the efficiency of separation and transport. Herein, a gradient‐modulated, stable and precise strain applied strategy for 2D materials is designed and constructed, which results in a significant improvement in the detect efficiency of ZnO/WSe2/graphene van der Waals heterojunction photodetectors. Different from the overall strain of all‐component materials in typical photodetectors, biaxial tensile strain is applied to WSe2 that can be precisely modulated by controlling the height of ZnO nanorods, while the strain is nearly unaffected to ZnO. As the strain modulation increases from 1.3% to 4.0%, the external quantum efficiency (EQE) of the heterojunction increases from 11.4% to 35.3%, representing a threefold increase. Furthermore, with increasing strain, the EQE can reach higher levels. Moreover, the strain‐enhanced conversion efficiency mechanism is elucidated that results from the synergistic effect of the strain‐induced WSe2 exciton convergence and the strain‐increased ZnO/WSe2 interface barrier, which enhances the carrier interface separation efficiency.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Electric Field and Strain Tuned the Electronic and Optical Properties of Zr2CO2/MoSe2 Van Der Waals Heterojunction

Weilong Lei,Rui Zhou,Fangfang Zhuang,Hongbo Li,Xiaojun Ye,Rui Zhang

DOI: https://doi.org/10.1016/j.physe.2024.116006

2023-01-01

Abstract:Two-dimensional semiconductor materials have attracted significant research interest due to their exceptional properties in various applications. Among them, transition-metal dichalcogenides and MXenes have emerged as widely used materials in photoelectronic devices due to their excellent optical and electronic properties. In this study, we investigate the electronic and optical properties of MXene/MX2 heterojunctions by employing First Principles based on density functional theory calculations on Zr2CO2/MoSe2 van der Waals heterojunctions. The results of band structure, density of states and band alignment demonstrate that the Zr2CO2/MoSe2 heterojunction is a type-II band alignment with an indirect bandgap of 0.93 eV. We further explore the impact of electric fields and strains on their electronic and optical performance. The results show that carriers can be effectively separated for designing high-performance devices in photocatalysis under electric fields ranging from -0.5 to 0.5 V/& Aring; and biaxial strains ranging from -4% to 10 %. The formation of the Zr2CO2/MoSe2 heterojunction allows for enhanced coefficient and a broader light absorption range compared to the individual Zr2CO2 and MoSe2 components. In consequence, this study contributes to a fundamental understanding of Zr2CO2/ MoSe2 heterojunctions and their potential applications in photocatalysis.

Optoelectronic properties and strain regulation of the 2D WS 2 /ZnO van der Waals heterostructure

A van der Waals pn heterojunction with organic/inorganic semiconductors

The Electronic and Optical Properties of PC6/WS2 Heterostructure Modulated Via Biaxial Strain and External Electric Field

Anisotropic strain effect on structural and electronic properties in WSe2/ZnO mixed-dimensional heterostructure

Optical and tunable electronic properties of doped PtS2/ZrS2 Van Der Waals heterostructure under the effect of strain and electric field

Construction of 2D Lateral Pseudoheterostructures by Strain Engineering

Tunable electronic and optical properties of the WS 2 /IGZO heterostructure via an external electric field and strain: a theoretical study.

Strain-tunable electronic and optical properties of Zr2CO2 MXene and MoSe2 van der Waals heterojunction: A first principles calculation

Strain regulated interlayer coupling in WSe 2 /WS 2 heterobilayer

Strain engineering of type-II C 2 N/WS 2 van der Waals heterojunction for highly enhanced photocatalytic hydrogen evolution

Strain engineering for C2N/Janus monochalcogenides van der Waals heterostructures: Potential applications for photocatalytic water splitting

Two Dimensional WS2 Lateral Heterojunctions by Strain Modulation

Pristine Interlayer Coupling for Strain Engineering of WS2/WSe2 Nanosheet-Based Van Der Waals Heterostructures

Electric field and strain engineering tuning of 2D Gr/α-Ga2O3 van der Waals heterostructures

Strain-Tunable Band Alignment And Band Gap Of Gase/Wte2 Heterojunction For Water Splitting And Light-Emitting

Continuously tunable uniaxial strain control of van der Waals heterostructure devices

The adjustable electronic and photoelectric properties of the WS2/WSe2 and WSe2/WTe2 van der Waals heterostructures

Electric fields and strains effect on the electronic and optical properties of Zr2CO2/MoSSe van der Waals heterostructure

The First-Principles Study of External Strain Tuning the Electronic and Optical Properties of the 2D MoTe2/PtS2 van der Waals Heterostructure

Gradient‐Strained Van Der Waals Heterojunctions for High‐Efficient Photodetectors

Electric Field and Strain Tuned the Electronic and Optical Properties of Zr2CO2/MoSe2 Van Der Waals Heterojunction