Van der Waals heterostructures gas sensors based on narrow-wide bandgap semiconductors for superior sensitivity

Wei Gan,Ming Jiang,Yucheng Liu,Li Ming,Ruichun Xiao,Xi Tang,Yu Liu,Dunxu Long,Changhui Zhao,Hui Li
DOI: https://doi.org/10.1088/1361-6528/ad06d2
IF: 3.5
2023-10-26
Nanotechnology
Abstract:Achieving high sensitivity in gas sensors is crucial for the precise detection of toxic agents. However, this can be challenging as it requires gas sensors to possess both high response signal and low electrical noise simultaneously, which seems controversial as it necessitates adopting semiconductors with different bandgaps. Herein, we demonstrate the superior sensitivity of 2D MoS2/Te van der Waals heterostructures (vdWHs) gas sensors fabricated by combining narrow bandgap (Te) and wide bandgap (MoS2) semiconductors. The as-fabricated MoS2/Te vdWH gas sensors exhibit excellent sensitivity that is unavailable for sensors based on its individual counterparts. The response towards 50 ppm NH3 is improved by two and six times compared to the individual MoS2 and Te gas sensors, respectively. Besides, a high signal-to-noise ratio (SNR) of ~350 and an ultralow limit of detection (LOD) of ~2 ppb is achieved. These results outperform most previously reported gas sensors due to the efficient modulation of barrier height of the MoS2/Te p-n junction as well as the synergistic effect benefiting from the low electric noise of narrow bandgap Te and high response signal of wide bandgap MoS2. Our work provides an insight into utilizing vdWHs based on narrow-wide bandgap semiconductors for developing highly sensitive gas sensors. Keywords: 2D materials, tellurium, mol
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
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