Abstract:CdSe single crystals (SCs), with a relatively high atomic number, large X-ray absorption coefficients, and high carrier mobility, are expected to provide high-performance detection for X-ray. However, the difficulty of growing high-quality CdSe SC has severely limited its application in X-ray detection. In this work, we develop an unconstrained physical gas phase method and in situ annealing process to grow high-quality CdSe SCs under unconstrained conditions. Using this method, CdSe SCs exhibit natural exposure planes, ultrahigh resistivity of 5.43 × 1012 to 1.29 × 1013 Ω cm and high μτ product of 1.3 × 10–2 to 1.5 × 10–2 cm2 V–1. It is also observed that CdSe SC X-ray detectors exhibit a record sensitivity of 2.08 × 105 μC Gyair–1 cm–2 and a low detection limit of 85 nGyair s–1, which are both desired in medical diagnostics. Moreover, those devices with different crystal directions provide anisotropic X-ray detection performance. Our findings pave a new avenue to exploit high-performance CdSe SC X-ray detectors.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c13567?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c13567</a>.Attenuation efficiency of CdSe to a few representative X-ray photons, ratio of the photo/dark current of devices at various dose rates, X-ray photocurrent-dose rate curves under 0.1 and 0.15 V μm–1, electric field-dependent gain factor, dose rate-dependent gain factor, and performance comparison of several direct X-ray detectors (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c13567/suppl_file/am0c13567_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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