Abstract:A distinct rhombohedral R3 ferroelectric phase is successfully synthesized in Mn‐doped Hf0.5Zr0.5O2 epitaxial thin films, with exceptional remnant polarization, retention, and endurance. This advancement enables the controlled phase transition among R3m, R3, and Pca21 polar phases by simply adjusting the Mn dopant concentration and film thickness. The research broadens the understanding of HfO2‐based ferroelectric materials and potentially promotes the advancement of integrated ferroelectric devices. HfO2‐based ferroelectric materials are emerging as key components for next‐generation nanoscale devices, owing to their exceptional nanoscale properties and compatibility with established silicon‐based electronics infrastructure. Despite the considerable attention garnered by the ferroelectric orthorhombic phase, the polar rhombohedral phase has remained relatively unexplored due to the inherent challenges in its stabilization. In this study, the successful synthesis of a distinct ferroelectric rhombohedral phase is reported, i.e., the R3 phase, in Mn‐doped Hf0.5Zr0.5O2 (HZM) epitaxial thin films, which stands different from the conventional Pca21 and R3m polar phases. These findings reveal that this R3 phase HZM film exhibits a remnant polarization of up to 47 μC cm−2 at room temperature, along with an exceptional retention capability projected to exceed a decade and an endurance surpassing 109 cycles. Moreover, it is demonstrated that by modulating the concentration of Mn dopant and the film's thickness, it is possible to selectively control the phase transition between the R3, R3m, and Pca21 polar phases. This research not only sheds new light on the ferroelectricity of the HfO2 system but also paves the way for innovative strategies to manipulate ferroelectric properties for enhanced device performance.

Enhanced Ferroelectricity in Orthorhombic Manganites Gd1−xHoxMnO3

Enhanced Polarization and Magnetoelectric Response in Tb 1− X Ho X MnO 3

Tuning The Competition Between Ferromagnetism And Antiferromagnetism In A Half-Doped Manganite Through Magnetoelectric Coupling

Phase transition and phase separation in multiferroic orthorhombic Dy 1−x Ho x MnO 3 (0 ≤ x ≤ 1)

Magnetic Properties of Orthorhombic Perovskite Ho 1− X La X MnO 3

Phase transition and phase separation in multiferroic orthorhombic Dy(1-x)Ho(x)MnO3 (0 ≤ x ≤ 1)

Phase Transition in Orthorhombic Perovskite Sm1−xLuxMnO3: Evidenced by the Emergence of Ferroelectric Polarization

Structural and ferroelectric properties of orthogonal crystalline in Fe-doped HoMnO3 synthesized at normal pressure

Enhanced Magnetic Properties of Novel Non-Equimolar (la0.25nd0.25sm0.25gd0.25)1–yb MnO3 High-Entropy Perovskite Ceramics by Yb Doping☆

Enhanced Multiferroicity In Mg-Doped Ca3co2-Xmnxo6

Ferroelectricity and Competing Interactions in Ho-Deficient Non-Stoichiometric Orthorhombic Homno3

Intrinsic electronic phase separation and competition between $G$-type, $C$-type and $CE$-type charge and orbital ordering modes in Hg$_{1-x}$Na$_x$Mn$_3$Mn$_4$O$_{12}$

Phase Diagram and Spin-Glass Phenomena in Electron-Doped La1−xHfxMnO3 (0.05 ≤ X ≤ 0.3) Manganite Oxides

Influence of lone pair doping on the multiferroic property of orthorhombic HoMnO3: ab initio prediction

Magnetically-induced ferroelectricity in orthorhombic manganites: microscopic origin and chemical trends

Multiple magnetic transitions induced by Mn-doping in orthochromite HoCrO 3

Effective Enhancement of the Ferroelectric Performance of Polar Co-Gallate MOF by Doping M2+ Ions (M = Mg, Mn, Ni) into Framework Nodes.

Strategy for Achieving Multiferroic E-type Magnetic Order in Orthorhombic Manganites RMnO3 (R = La-Lu)

Modulation of Magnetic Properties and Enhanced Magnetoelectric Effects in Mnw1-Xmoxo4 Compounds

Novel multiferroicity in GdMnO 3 thin films with self-assembled nano-twinned domains

Rhombohedral R3 Phase of Mn‐Doped Hf0.5Zr0.5O2 Epitaxial Films with Robust Ferroelectricity