From Positive to Negative Magnetoresistance in Graphene with Increasing Disorder

Yang-Bo Zhou,Bing-Hong Han,Zhi-Min Liao,Han-Chun Wu,Da-Peng Yu
DOI: https://doi.org/10.1063/1.3595681
IF: 4
2011-01-01
Applied Physics Letters
Abstract:Artificial disorder was introduced gradually into monolayer graphene by controlling Ga+ ion irradiation and the corresponding electronic transport properties regulated by gate voltage, source-drain voltage, temperature, and magnetic field were studied experimentally. An unsaturated positive magnetoresistance (MR) up to 100% at ∼5 T was observed in as-fabricated graphene, while there is significant negative MR in disordered graphene. This phenomenon was attributed to the monocrystalline breaking and crystallite-boundary scattering in disordered graphene.
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